Fast analysis of bounces on power/ground planes using even-odd partition

A novel method for analyzing the bounces on structure of parallel power/ground planes by using the even-odd mode partition is presented in this paper. Based on the distributed RLCG circuit model derived from the two dimensional electromagnetic field equations of the power/ground planar structure, this method can speed up the circuit simulation of the bounces on power/ground planes by using even-odd mode partition. Furthermore, the method can be used to evaluate the effects of the terminated decoupling capacitors and the hole structures on power/ground plane. The numerical examples demonstrate that the method has both high efficiency and good precision.     

阿斯旺大坝的泥沙效应及启示

阿斯旺大坝修建已经30多年了。本文着重介绍阿斯旺大坝带来的库区泥沙淤积，下辨河道演变和河口海岸的变化，以及采取的治理措施。结合我国大型水利工程建设，阐述阿斯旺大埂给我们的启示。     

大功率电视发射管的灯丝供电方式及其对管子寿命影响的探讨

本文详尽地讨论了电子管灯丝分档加压过程的电流冲击和对灯丝电路采用逐渐平滑加电方式的必要性,并举例说明了平滑加电对延长电子管使用寿命的显著效果。     

A routing protocol for socially selfish delay tolerant networks

Existing routing algorithms for Delay Tolerant Networks (DTNs) assume that nodes are willing to forward packets for others. In the real world, however, most people are socially selfish; i.e., they are willing to forward packets for nodes with whom they have social ties but not others, and such willingness varies with the strength of the social tie. Following the philosophy of design for user, we propose a Social Selfishness Aware Routing (SSAR) algorithm to cope with user selfishness and provide good routing performance in an efficient way. To select an effective forwarding node, SSAR considers both users’ willingness to forward and their contact opportunity, and derives a metric with mathematical modeling and machine learning techniques to measure the forwarding capability of the mobile nodes. Moreover, SSAR formulates the data forwarding process as a Multiple Knapsack Problem with Assignment Restrictions (MKPAR) to satisfy user demands for selfishness and performance. Trace-driven simulations show that SSAR allows users to maintain selfishness and achieves good routing performance with low transmission cost.     

加法色噪声对双模激光竞争效应的影响

研究了加法色噪声对双模激光竞争效应的影响。通过线性稳定性分析以及小τ近似得到一些很有意义的结论。     

Efficient modeling of RF CMOS spiral inductors using generalized knowledge-based neural network

Efficient modeling of RF CMOS spiral inductors by virtue of a novel generalized knowledge-based neural network (GKBNN) is presented. Prior knowledge of on-chip inductors is used for constructing the GKBNN. This new modeling approach also exploits merits of the iterative multi stage algorithm. This GKBNN has much enhanced learning and generalization capabilities. Comparing with the conventional neural network or the knowledge-based neural network, this new GKBNN model can map the input–output relationships with fewer hidden neurons and has higher reliability for generalization. As a consequence, this GKBNN model can run as fast as an approximate equivalent circuit model yet generate results as accurate as detailed electromagnetic simulations. Experiments are included to demonstrate merits and efficiency of this new approach.     

PMOS breakdown effects on digital circuits – Modeling and analysis

The degradations in the pMOS device due to gate oxide breakdown introduced by voltage stress were investigated experimentally. The stress-induced shifts in gate leakage and I–V characteristics were presented. A combined Verilog-A and sub-circuit model was first time introduced and employed to simulate the pMOS breakdown behaviors. The Verilog-A model can accurately simulate the power law characteristics of breakdown gate leakage current with a fractional coefficient. With the developed model, the simulated results and the measurements have good agreements. The traditional logic circuits, such as the inverter and the latch, have been investigated through Cadence simulations with the improved models. The latch suffers from the gate oxide breakdown significantly. The NULL Convention Logic (NCL) circuit has also been examined and analyzed systematically. The results showed substitute degradations due to the pMOS gate oxide breakdown.     

A Model With Temperature-Dependent Exponent for Hot-Carrier Injection in High-Voltage nMOSFETs Involving Hot-Hole Injection and Dispersion

An improved hot-hole-involved interface-state generation model is proposed for hot-carrier injection (HCI) degradation in high-voltage (HV) nMOSFETs. This model is based on experiments over a wide range of temperatures, voltage conditions, simulation results, and the underlying physical mechanisms. The model provides a thorough picture of an HCI system in HV nMOSFETs, with hot-hole injection related to an additional maximum electric-field region. The hot-hole injection in HCI is assumed to introduce deeper localized hydrogen states in gate-oxide films than that in negative-bias temperature instabilities. This result facilitates the dispersive transport of hydrogen. Therefore, HCI degradation in HV transistors is explained within the framework of disorder-controlled hydrogen kinetics. The power-law model can successfully predict temperature dependences for HCI degradation.     

小波包-能量谱在提取脉搏信号特征中的应用

小波包是继小波分析后提出的一种新型的多尺度分析方法。文章描述了小波包分析方法的基本原理及其实现算法,并从能量分布的角度出发,阐述了在脉搏信号特征提取中,利用小波包分析方法将脉搏信号进行量化、分解,从而便于处理、判断的一种新的应用途径。实验结果表明小波包-能量谱用于提取脉搏信号特征是行之有效的。     

Combined sparsifying transforms for compressed sensing MRI

In traditional compressed sensing MRI methods, single sparsifying transform limits the reconstruction quality because it cannot sparsely represent all types of image features. Based on the principle of basis pursuit, a method that combines sparsifying transforms to improve the sparsity of images is proposed. Simulation results demonstrate that the proposed method can well recover different types of image features and can be easily associated with total variation.