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51.
戴力农 《艺术与设计.数码设计》2007,(5)
在上海地铁研究中,我们发现了许多使用者的不满。这些不满来自于设计师对使用者的缺乏了解和缺乏关注。通过对上海地铁真实的使用者、真实的地点和真实的时间的调研,我们分析出25项上海地铁使用者的需求。并提出希望设计师能够从这些使用者的需求出发,去作为使用者带来良好体验的设计。 相似文献
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M. Del C. Ruiz J. A. González J. B. Rivarola 《Metallurgical and Materials Transactions B》2004,35(3):439-448
The mechanism and kinetics of β-Ta2O5 chlorination, mixed with sucrose carbon, have been studied by a thermogravimetric technique. The investigated temperature
range was 500 °C to 850 °C. The reactants and reaction residues were analyzed by scanning electronic microscopy (SEM), X-ray
diffraction (XRD), and Brunauer-Emmett-Teller method for surface area (BET). The effect of various experimental parameters
was studied, such as carbon percentage, temperature, chlorine partial pressure, and flow, use of the multiple sample method,
and carbon previous oxidation. The carbon percentage and previous treatment have an effect on the system reactivity. The temperature
has a marked effect on the reaction rate. In the 500 °C to 600 °C temperature interval, the apparent activation energy is
144 kJ/mol of oxide, while at higher temperatures, the activation energy decreases. With high chorine partial pressures, the
order of reaction is near zero. The kinetic contractile plate model, X=kt, considering carbon oxidation as the controlling stage, is the one with the best fit to the experimental data. A probable
mechanism for the carbochlorination of β-Ta2O5 is proposed: (1) activation of chlorine on the carbon surface, (2) chlorination of Ta2O5, (3) oxidation of carbon, and (4) recrystallization of β-Ta2O5. 相似文献
57.
Sanghyun Ju Jianye Li Pimparkar N. Alam M.A. Chang R.P.H. Janes D.B. 《Nanotechnology, IEEE Transactions on》2007,6(3):390-395
Nanorod field-effect transistors (FETs) that use multiple Mg-doped ZnO nanorods and a SiO2 gate insulator were fabricated and characterized. The use of multiple nanorods provides higher on-currents without significant degradation in threshold voltage shift and subthreshold slopes. It has been observed that the on-currents of the multiple ZnO nanorod FETs increase approximately linearly with the number of nanorods, with on-currents of ~1 muA per nanorod and little change in off-current (~4times10-12). The subthreshold slopes and on-off ratios typically improve as the number of nanorods within the device channel is increased, reflecting good uniformity of properties from nanorod to nanorod. It is expected that Mg dopants contribute to high n-type semiconductor characteristics during ZnO nanorod growth. For comparison, nonintentionally doped ZnO nanorod FETs are fabricated, and show low conductivity to compare with Mg-doped ZnO nanorods. In addition, temperature-dependent current-voltage characteristics of single ZnO nanorod FETs indicate that the activation energy of the drain current is very low (0.05-0.16 eV) at gate voltages both above and below threshold 相似文献
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Optical absorption and photoluminescence of Ca3(VO4)2 single crystal grown by a floating-zone technique and containing Nd3+ ions were investigated. High absorption coefficients and broadening of most absorption bands are present at 300 K, while substructures in some of the same bands can be evidenced at 12 K. Most features of measured spectra are characteristic of random occupation of more than a single Ca2+ site by the Nd3+ ion and of distortions provoked by different charge compensation mechanisms involving oxygen vacancies promotion in the crystal lattice. Nd3+ optical properties were studied by using the Judd-Ofelt theory to calculate the spectral parameters relevant for laser applications. 相似文献