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31.
32.
An emerging selective metallization process to fabricate fine-line conductors based on drop-on-demand (DOD) ink jet printing and novel nano-particle fluid suspensions (NPFS) was studied. The suspensions consist of 1-10 nm silver or gold particulates that are homogeneously suspended in an organic carrier. A piezo-electric droplet generator driven by a bipolar voltage signal is used to dispense 50-70 μm diameter droplets traveling at 1-3 m/s before impacting a compliant polyimide substrate. The deposit/substrate composite is subsequently processed at 300°C for 15 min to allow for complete evaporation of the carrier and for sintering of the nano-particles, thereby yielding a finished circuit interconnect. Test vehicles created using this technique exhibit features as fine as 120 μm wide and 1 μm thick with resistivities on the order of 3.5×10-5 Ωcm. The circuitry performed well under environmental conditioning. As expected, repeatability of circuitry fabrication showed sensitivity to the generation of steady, satellite-free droplets. In an effort to generate droplets consistently, it is essential to develop a strong fundamental understanding of the correlation between device excitation parameters and dispensed fluid properties, and to resolve the microrheological behavior of the NPFS when flowing through the droplet generator  相似文献   
33.
An empirical formula for calculating the extinction cross section (ECS) by raindrops over a broad frequency range is first derived based on extensive calculations made on a widely varying in mean radius of modified Pruppacher and Pitter (MPP) raindrop models ranging from 0.25 to 3.5 mm. The expansion coefficients in the empirical formula are determined by least-squares curve fitting of numerical data obtained by the volume integral equation formulation (VIEF). The formula satisfies the frequency and raindrop size dependence. Numerical results obtained from the empirical formula for calculating the ECS are generally in good agreement with those calculated by the VIEF for raindrops with mean radius varying from 0.25 to 3.5 mm in the frequency range from 0.6 to 100 GHz. The average error in the ECS is less than 10%. The formula thus provides a simple and inexpensive method for calculating the ECS of raindrops, which otherwise requires complicated and expensive methods of calculation. By implementing this empirical formula of ECS into the rain attenuation equation, a new numerically empirical formula for calculating the specific rain attenuation is also proposed. The validity of the empirical formula for calculating the specific rain attenuation is also checked by comparing the obtained results of specific rain attenuation with those obtained from Li et al.'s (1995) solution, Yeo et al.'s (1993) measurement, and Olsen et al.'s (1978) power-law equation  相似文献   
34.
我国建筑涂料技术进步简评   总被引:1,自引:1,他引:0  
从以下诸方面简述我国建筑涂料的技术进步:⑴新品种涂料的研制开发;⑵加强对配套材料及施工技术的研究;⑶超细填料在涂料中的应用;⑷计算机自动配色技术;⑸产品标准的修订;⑹建筑涂料的实用范围扩大。  相似文献   
35.
 Two new modeling and simulation approaches for Simultaneous Switching Noise (SSN) are described and compared to “brute force” simulation by SPICE. Both simulation accuracy and simulation run-time are considered. The two new approaches are: 1) the “effective inductance” method, in which an approximate, very efficient method of extracting an SSN L eff  is utilized; and 2) the “macromodel” method, in which the complex inductance network responsible for SSN is represented by only a few dominant poles in the frequency domain and the time domain response is obtained by an efficient convolution algorithm. Both approaches are shown to be accurate and fast, but only the effective inductance algorithm is robust in numerical convergence. Received: 19 March 1997 / Accepted: 25 March 1997  相似文献   
36.
The author demonstrates a simple technique that extracts average doping concentration in the polysilicon and silicon near the oxide in a metal/polysilicon/oxide/silicon system. The technique is based on the maximum-minimum capacitance method on two large area structures-one MOSFET and one MOSC (MOS capacitor). The technique is simple and reliable since only three data points in the C-V data are required-two points in MOSC C-V and one point in MOSFET C-V. The technique avoids inaccuracy caused by interface traps at the polysilicon/oxide and the oxide/silicon interface. The technique can be implemented into fab routine electric-test procedures for simultaneously monitoring change of doping concentration in polysilicon and silicon during process development  相似文献   
37.
In this study, it is demonstrated that the incorporation of fluorine can enhance poly-Si/Si interfacial oxide break-up in the poly-Si emitter contacted p+-n shallow junction formation. The annealing temperature for breaking up the poly-Si/Si interfacial oxide has been found to be as low as 900°C. As a result, the junction depth of the BF2-implanted device is much larger than that of the boron-implanted device  相似文献   
38.
Clinical manifestations and peripheral blood lymphocyte subset changes were studied in patients with myasthenia gravis (MG) to elucidate the mechanism of clinical improvement following treatment, with thymectomy (Tx) or glucocorticoid (GC) therapy. The changes found were: 1. There was a significant increase in percentages of CD3+, CD29+ CD4+ cells and CD4/CD8 ratio and a significant decrease in percentages of CD8+ and CD16,56+ cells in patients who had never been treated with any immune therapy. 2. After Tx or GC therapy, CD3+ and CD4+, CD29+ cells were decreased, but the number CD19+ and CD16, CD56 cells did not change. 3. Tx had a special effect on CD8+ cells. In most of the patients who showed clinical improvement after Tx, CD8+ cells were increased and CD4/CD8 ratio wad decreased. 4. Anti-acetylcholine receptor (AChRAb) titers were markedly decreased after GC therapy. These results indicate that there were obvious abnormalities in cell-mediated immunity in addition to those in humoral immunity in myasthenia gravis. These abnormalities tended to be normalized after Tx or GC therapy.  相似文献   
39.
The current-voltage characteristics of the P-N double quantum well resonant interband tunneling (RIT) diodes in InAlAs-InGaAs system have been improved in this letter. The peak-to-valley current ratio (PVCR) is as high as 144 at room temperature. As we know, this is the highest room temperature PVCR ever reported in any tunneling devices. Moreover, the influence of the central barrier thickness varying from 10 Å to 30 Å on the device characteristics is also studied  相似文献   
40.
Very-low-transmission line noise of <0.25 dB at 18 GHz and low power loss /spl les/0.6 dB at 110 GHz have been measured on transmission lines fabricated on proton-implanted Si. In contrast, a standard Si substrate gave much higher noise of 2.5 dB and worse power loss of 5 dB. The good RF integrity of proton-implanted Si results from the high isolation impedance to ground, as analyzed by an equivalent circuit model. The proton implantation is also done after forming the transmission lines at a reduced implantation energy of /spl sim/4 MeV. This enables easier process integration into current VLSI technology.  相似文献   
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