Host/guest complex of Me-β-CD/2,2-dimethoxy-2-phenyl acetophenone for initiation of aqueous photopolymerization: Kinetics and mechanism

Methylated-β-cyclodextrin (Me-β-CD) was used to complex the photoinitiator, 2,2-dimethoxy-2-phenyl acetophenone (DMPA), yielding a water-soluble host/guest complex. The comparative studies demonstrated that the Me-β-CD complexed DMPA exhibited a high photoreactivity identical to the uncomplexed DMPA, while the CD complex obviously influenced the products of primary photolysis of DMPA and the photopolymerization kinetics due to the steric effect of CD on the subsequent initiation reactions. The photopolymerization rate of acrylamide can be described by the equation: R_p=K[2a]^0.62[M]^1.37[I]^0.5[Me-β-CD]⁰. The mechanism of polymerization was also discussed.     

全方位治理城市交通,促进城市可持续发展

城市交通对城市的社会经济活动和生态资源环境具有双向作用,是城市功能中最活跃的因素.目前城市交通问题突出表现在交通阻塞和汽车尾气污染两个方面,已成为困扰着大中城市发展的主要问题.交通堵塞不仅给人们的生活和工作带来不便,而且增加了城市经济运行的时间成本,影响到城市功能的发挥和城市的健康发展,同时又进一步加剧了能源的消耗.可见城市交通问题是关系到城市可持续发展的关键问题之一.     

Towards a generalized TLM algorithm for solving arbitraryreciprocal and nonreciprocal planar structures

A generalized transmission line matrix (TLM) algorithm is developed in the frequency domain to tackle arbitrary both reciprocal and nonreciprocal anisotropic waveguiding problems. In particular, the modeling issue for arbitrary planar structures is stressed in this work. A new three-dimensional (3-D) condensed node is used to consider the effect of both electric and magnetic constitutive tensors. Various results indicate how the modal dispersive behavior can be manipulated by changing not only the anisotropic characteristics of the substrate, but also the strip/slot geometry as well as the magnitude and orientation of the applied static magnetic field. The present algorithm is useful for CAD and simulation of a large class of gyrotropic waveguide-based microwave and millimeter-wave circuits     

An analytical grain-barrier height model and its characterizationfor intrinsic poly-Si thin-film transistor

An analytical model for the grain-barrier height of the intrinsic poly-Si thin-film transistors (TFTs) is developed, in which the grain-barrier height for the applied gate voltage smaller than the threshold voltage is obtained by solving the charge neutrality equation and the grain-barrier height for the applied gate voltage larger than the threshold voltage is obtained by using the quasi-two-dimensional (2-D) method. Good agreements between experimental and simulation results are obtained for a wide gate voltage range