The incompatibility of knowledge regimes: consequences of the material world for cross-domain work

In this paper, we argue that successful integration of knowledge across work domains in the short-term can mask the generation of long-term consequences. We explore a setting, the introduction of environmental considerations into semiconductor manufacturing, where the eventual adoption of common measurement artifacts and associated practices enabled knowledge integration, but failed to address significant underlying consequences. Drawing from observational, interview, and archival data we develop an understanding of the work practices of the Tech and EnviroTech groups as structured by the material world and broader collective conventions. We introduce the concept of knowledge regime to outline the differences in knowledge across these work domains. More specifically, we find that differences in the causal specificity and developmental time horizon of knowledge and the measurement artifacts that result contribute to the relative power of one knowledge regime over another. Understanding these sources of incompatibility provides insight into the design requirements of information systems as boundary objects for knowledge integration, but also specifies the potential limits to any design effort.     

Perceived risk and trust associated with purchasing at electronic marketplaces

Understanding consumer behaviour is of vital importance to consumer-oriented e-business models today. In this paper, we study the relationships between consumer perceptions of risk and trust and the attitude towards purchasing at a consumer-to-consumer electronic marketplace (EM). Typical for EM settings is that consumer behaviour is subject to perceptions of the selling party as well as of the institutional structures of the intermediary that is operating the EM. Building upon the well-established literature of trust, we consider the concepts of intermediary trust and seller trust. We extend this categorisation by introducing the concepts of intermediary risk and seller risk. We developed measurement instruments for intermediary risk and seller risk. All measurement scales have acceptable alphas and are unidimensional. An empirical study is conducted to explore the relationships between the risk and trust types and consumer purchase attitude. The results reveal significant, direct effects of seller trust and seller risk. Second-order effects of intermediary trust and intermediary risk are investigated and reported. The paper concludes with general observations and recommendations for research and practice.     

液相添加剂对PTCR陶瓷电性能的影响

液相添加剂ＡＳＴ（Ａｌ２Ｏ３＋ＳｉＯ２＋ＴｉＯ２）对ＢａＴｉＯ３陶瓷材料电性能的影响很大，随着Ａｌ２Ｏ３含量的增加，材料的电性能降低；ＳｉＯ２、ＴｉＯ２的物理特性对材料电性能影响较大；过量ＴｉＯ２对材料ＰＴＣ效应有重要影响，适当过量ＴｉＯ２含量，可得到性能优良的ＰＴＣＲ陶瓷。     

Evaluation of Qbd for electrons tunneling fromthe Si/SiO2 interface compared to electron tunneling from thepoly-Si/SiO2 interface

Electrical time-to-breakdown (TTB) measurements have shown the charge to breakdown Q_bd of gate oxide capacitors fabricated on n-type well (n-well) substrates always to be higher than that of capacitors on p-type well (p-well) substrates on the same wafer when both are biased into accumulation under normal test conditions. Here the authors correlate the higher n-well Q_bd to smooth capacitor oxide/substrate interfaces and minimized grain boundary cusps at the poly-Si gate/oxide interfaces, confirming that Fowler-Nordheim tunneling is the dominant current conduction mechanisms through the oxide. They correlate higher Q_bd to higher barrier height for a given substrate type and observe that the slope of the barrier height versus temperature plot is lower for both p-well and n-well cases with electrons tunneling from the silicon substrate. This is attributed to surface roughness at the poly-Si gate/SiO₂ interface. A poly-Si gate deposition and annealing process with clean, smooth oxide/substrate interfaces will improve the p-well breakdown characteristics and allow higher Q_bd to be achieved     

Electrical properties and positron annihilation study of (Ba<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Ho<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>)TiO<Subscript>3</Subscript> ceramics

DC resistivity, dielectric constant, dielectric loss and positron annihilation spectra of (Ba_1−x Ho _x )TiO₃ ceramics have been measured as a function of holmium concentration x. It has been found that the DC resistivity of (Ba_1−x Ho _x )TiO₃ is strongly dependent on the Ho content: it decreases three orders of magnitude and reaches a minimum at x = 0.4%. Doping with 0.6% holmium increases the permittivity of BaTiO₃ by approximately three times (from ∼1,300 to ∼4,000), with only a slight increase in the corresponding dielectric loss. The local electron density and defect concentration estimated using positron annihilation technique conforms well to the features found in the dielectric and resistivity measurements. The results have been discussed in terms of a mixed compensation model.     

A Study of Integrated Document and Connection Caching in the WWW

Document caching and connection caching are extensively studied problems. In document caching, one has to maintain caches containing documents accessible in a network. In connection caching, one has to maintain a set of open network connections that handle data transfer. Previous work investigated these two problems separately while in practice the problems occur together: In order to load a document, one has to establish a connection between network nodes if the required connection is not already open. In this paper we present the first study that integrates document and connection caching. We first consider a very basic model in which all documents have the same size and the cost of loading a document or establishing a connection is equal to 1. We present deterministic and randomized online algorithms that achieve nearly optimal competitive ratios unless the size of the connection cache is extremely small. We then consider general settings where documents have varying sizes. We investigate a FAULT model in which the loading cost of a document is 1 as well as a BIT model in which the loading cost is equal to the size of the document.