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101.
Network virtualization opens the door to novel infrastructure services offering connectivity and node manageability. In this letter, we focus on the cost‐efficient embedding of on‐demand virtual optical network requests for interconnecting geographically distributed data centers. We present a mixed integer linear programming formulation that introduces flexibility in the virtual‐physical node mapping to optimize the usage of the underlying physical resources. Illustrative results show that flexibility in the node mapping can reduce the number of add‐drop ports required to serve the offered demands by 40%.  相似文献   
102.
This paper describes the design and implementation of a second-order switched-capacitor (SC) bandpass (BP) filter with very wide quality factor (Q) programmability range. The filter selectivity is digitally programmed by varying the effective sampling frequency of an SC branch, without modifying any capacitor value. The proposed approach allows a quasi-continuous Q-factor tunability avoiding, in principle, the inherent quantization error associated to any traditional programming technique. Automatic Q-factor tuning is performed by using a scheme based on an amplitude-locking loop approach. Experimental results obtained from a 0.8-m CMOS integrated prototype demonstrate the versatility of the proposed technique for high-Q SC BP filters.  相似文献   
103.
In this paper, soliton propagation in nonlinear transmission lines (NLTLs) periodically loaded with symmetric voltage dependent capacitances is studied. From the lumped element equivalent circuit of the line we have analyzed the influence of nonlinear shunt reactances on soliton propagation characteristics. It is shown that by increasing the non linearity of the C–V characteristic, a faster separation of input signal into solitons is achieved. The fact that frequency multiplication in NLTLs is governed by soliton formation makes the results of this work relevant to understand the influence of nonlinear loading devices on multiplier performance. Since a heterostructure barrier varactor (HBV)-like voltage dependent capacitance has been considered for the nonlinear devices, this study can be of interest for the design of millimeter wave frequency multipliers loaded with HBVs.  相似文献   
104.
Thermoelectric effect spectroscopy and photoluminescence techniques were used to study the defect levels in samples from three crystals of CdTe:In grown by the vertical gradient freeze method. The main goal of the investigation was to study defects, which strongly trap charge carriers or act as recombination centers in order to eliminate them from the technological process. The main difference among detecting and non-detecting samples was the absence of electron traps with a very high capture cross-section and energy 0.6 eV to 0.7 eV, which act as lifetime killers even at low concentrations. Recently published ab initio calculations show a complex of Te antisite and Cd vacancy within this energy range.  相似文献   
105.
This paper evaluates four mechanisms for providing service differentiation in IEEE 802.11 wireless LANs. The evaluated schemes are the Point Coordinator Function (PCF) of IEEE 802.11, the Enhanced Distributed Coordinator Function (EDCF) of the proposed IEEE 802.11e extension to IEEE 802.11, Distributed Fair Scheduling (DFS), and Blackburst. The evaluation was done using the ns-2 simulator. Furthermore, the impact of some parameter settings on performance has also been investigated. The metrics used in the evaluation are throughput, medium utilization, collision rate, average access delay, and delay distribution for a variable load of real time and background traffic. The simulations show that the best performance is achieved by Blackburst. PCF and EDCF are also able to provide pretty good service differentiation. DFS can give a relative differentiation and consequently avoids starvation of low priority traffic.  相似文献   
106.
107.
This study has examined in detail the effect of temperature (7-37 degrees C) and water availability (water activity, a(w), 0.89-0.97) on fumonisin B1 (FB1) production by an isolate of Fusarium moniliforme and F. proliferatum on irradiated maize grain after incubation for 28 days. The optimum conditions for F. moniliforme and F. proliferatum were 30 degrees C at 0.97 a(w) and 15 degrees C at 0.97 a(w), respectively. The maximum concentrations were 2861 mg kg(-1) and 17,628 mg kg(-1) dry wt. maize grain, respectively. At marginal a(w)/temperature conditions for growth (e.g. 0.89-0.91 a(w)) no FB1 was detected (<0.1 mg kg(-1)). A high variability was found between replicates for F. moniliforme, but not for F. proliferatum. These data were used to construct two-dimensional diagrams of all the a(w) x temperature conditions favourable for FB1 production for the first time. The data were also subjected to a polynomical regression, which demonstrated that there was a very good fit for the 15-30 degrees C range of temperature and at 0.97 a(w). However, at marginal environmental conditions this was not possible. This suggests that it may be possible to predict within a limited environmental range the potential for significant FB1 production.  相似文献   
108.
Open-circuit voltages are strongly dependent on the density-of-states in solar cells based on disordered semiconductors. In this work, organic solar cells based on tetraphenyldibenzoperiflanthene and fullerene C70 with a bilayer structure were fabricated to investigate the variation in the density-of-states with the substrate temperature during deposition of the donor. The maximum open circuit voltage was reached at a substrate temperature of 60 °C. Organic thin-film transistors were also fabricated to study their electrical properties, such as the mobility and the density-of-states. Finally, an organic solar cell with p–i–n structure was fabricated at the optimized substrate temperature, and a power conversion efficiency of almost 4% was obtained.  相似文献   
109.
In the mass assembly of today’s electronic circuits, solder paste is first printed onto the surface of the assembly boards through a metal mask called a stencil. The possible surface differences in level on the PWB, e.g. marking stickers or other protruding objects keep the stencil away from the PWB during stencil printing, can cause excessive printed volume of the solder paste, and solder bridges or other soldering failures can occur after reflow soldering. If these differences in level are not too high or they are sufficiently far from the soldering pads in lateral direction, the stencil can bend down to the pad during stencil printing and the volume of the deposited solder paste will be as expected.In our research a Finite Element Model (FEM) was created to investigate the stencil deformation and to determine the necessary distance between the pads and the local differences in level to achieve complete stencil contact to the PWB. A simple deformation measuring set-up was designed and fitted together to experimentally determine the mechanical parameters of the stencil and the squeegee, which were necessary for the FEM. PWB surface differences in level in the range of 0–90 μm and stencil foil thicknesses varying between 75 and 175 μm were inserted into the FEM as geometrical parameters and simulations were executed to calculate the minimum distances which are necessary to achieve perfect stencil contact to the PWB. The FEM was verified by comparing simulation results to experimental results obtained by real stencil printing.  相似文献   
110.
In this paper a low-voltage low-power threshold voltage monitor for CMOS process sensing is presented. This circuit works in weak inversion and it can be used as an elementary circuit block for on-chip compensation of the intra-die or inter-die threshold voltage variations in low-power analog and mixed-signal SoC, since it is robust to temperature and power supply voltage variations (similar to the bandgap voltage reference). The proposed threshold voltage monitor has been successfully verified in a standard 0.35-μm n-well CMOS TSMC process. Experimental results have confirmed that the circuit generates an average reference voltage of 758 mV (very close to the typical threshold voltage when extrapolated to absolute zero) for a 950 mV power supply voltage, with a variation of 39 ppm/°C for the −20 to 80°C temperature range.  相似文献   
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