Exciton Formation Dynamics and Band-Like Free Charge-Carrier Transport in 2D Metal Halide Perovskite Semiconductors

Metal halide perovskite (MHP) semiconductors have driven a revolution in optoelectronic technologies over the last decade, in particular for high-efficiency photovoltaic applications. Low-dimensional MHPs presenting electronic confinement have promising additional prospects in light emission and quantum technologies. However, the optimisation of such applications requires a comprehensive understanding of the nature of charge carriers and their transport mechanisms. This study employs a combination of ultrafast optical and terahertz spectroscopy to investigate phonon energies, charge-carrier mobilities, and exciton formation in 2D (PEA)₂PbI₄ and (BA)₂PbI₄ (where PEA is phenylethylammonium and BA is butylammonium). Temperature-dependent measurements of free charge-carrier mobilities reveal band transport in these strongly confined semiconductors, with surprisingly high in-plane mobilities. Enhanced charge-phonon coupling is shown to reduce charge-carrier mobilities in (BA)₂PbI₄ with respect to (PEA)₂PbI₄. Exciton and free charge-carrier dynamics are disentangled by simultaneous monitoring of transient absorption and THz photoconductivity. A sustained free charge-carrier population is observed, surpassing the Saha equation predictions even at low temperature. These findings provide new insights into the temperature-dependent interplay of exciton and free-carrier populations in 2D MHPs. Furthermore, such sustained free charge-carrier population and high mobilities demonstrate the potential of these semiconductors for applications such as solar cells, transistors, and electrically driven light sources.     

Probing stress effects in HfO2 gate stacks with time dependent measurements

Effects of constant voltage stress (CVS) on gate stacks consisting of an ALD HfO₂ dielectric with various interfacial layers were studied with time dependent sensing measurements: DC I–V, pulse I–V, and charge pumping (CP) at different frequencies. The process of injected electron trapping/de-trapping on pre-existing defects in the bulk of the high-κ film was found to constitute the major contribution to the time dependence of the threshold voltage (V_t) shift during stress. The trap generation observed with the low frequency CP measurements is suggested to occur within the interfacial oxide layer or the interfacial layer/high-κ interface, with only a minor effect on V_t.     

Spike detection using the continuous wavelet transform

This paper combines wavelet transforms with basic detection theory to develop a new unsupervised method for robustly detecting and localizing spikes in noisy neural recordings. The method does not require the construction of templates, or the supervised setting of thresholds. We present extensive Monte Carlo simulations, based on actual extracellular recordings, to show that this technique surpasses other commonly used methods in a wide variety of recording conditions. We further demonstrate that falsely detected spikes corresponding to our method resemble actual spikes more than the false positives of other techniques such as amplitude thresholding. Moreover, the simplicity of the method allows for nearly real-time execution.     

Digital signature to help network management using flow analysis

Because of constant growth in proportion and complexity of networks, flow analysis has become an indispensable tool for network management mechanisms. Through this resource, a traffic characterization, called digital signature of network segment using flow analysis (DSNSF), is accomplished. The models used for this purpose are the ant colony optimization metaheuristic, the Holt–Winters forecasting method and the statistical procedure, principal component analysis. The obtained DSNSF by each model is compared with the actual traffic of packets and bits and then subjected to specific evaluations in order to measure its accuracy. The experimental results show that the three methods could achieve good correlation indices and low normalized mean square error values between the DSNSF curve and the real traffic movement, indicating a good adaptability and efficiency in characterizing a network traffic segment. Copyright © 2015 John Wiley & Sons, Ltd.     

Interconnecting networks with optimized service provisioning

Telecommunication Systems - A recent trend of peering at geo-diversified Internet exchange points (IXPs) has empowered decades-old proposal of inter-networking and opened up new avenues of business...     

Mobile wireless network system simulation

This paper describes an advanced simulation environment which is used to examine, validate, and predict the performance of mobile wireless network systems. This simulation environment overcomes many of the limitations found with analytical models, experimentation, and other commercial network simulators available on the market today. We identify a set of components which make up mobile wireless systems and describe a set of flexible modules which can be used to model the various components and their integration. These models are developed using the Maisie simulation language. By modeling the various components and their integration, this simulation environment is able to accurately predict the performance bottlenecks of a multimedia wireless network system being developed at UCLA, determine the trade-off point between the various bottlenecks, and provide performance measurements and validation of algorithms which are not possible through experimentation and too complex for analysis.This work was supported in part by the Advanced Research Projects Agency, ARPA/CSTO, under Contract J-FBI-93-112 Computer Aided Design of High Performance Wireless Networked Systems, and by ARPA/CSTO under Contract DABT-63-94-C-0080 TransparentVirtual Mobile Environment.This paper was in part presented at the ACM Mobile Computing and Networking Conference (Mobicom '95), Berkeley, California, 14–15 November 1995.     

自动选择工作模式的宽范围稳压器

图1所示电路可在外部DAC（未示出）控制下为EEPROM提供编程电压。您可以用一个电位器来代替该DAC，以建立从12V电源上工作并能提供OV～32V可变输出电压的通用电源。如图1所示，凌特科技公司（Linear Technology）的LT1072HV型可变升压开关稳压器IC1，驱动一个由运放IC2、升压级Q3及发射极跟随器达灵顿晶体管Q2组成的A类放大器。电阻器R9和R10将放大器的正相环路增益设定为1＋（R9／R10）。     

The Impact of Cooperative Nodes on the Performance of Vehicular Delay-Tolerant Networks

Vehicular communications refer to a wide range of networks proposed for environments characterized by sparse connectivity, frequent network partitioning, intermittent connectivity, long propagation delays, asymmetric data rates, and high error rates. These environments may also be characterized by a potential non-available end-to-end path. To overcome these issues and improve the overall network performance, cooperation between network nodes must be severely considered. Nodes may cooperate by sharing their storage capacity, bandwidth, or even energy resources. However, nodes may be unwilling to cooperate due to a selfish behavior or to an intent to protect the integrity of their own resources. This selfish behavior significantly affects the functionality and performance of the network. This paper overviews the most recent advances related with cooperation on vehicular networks. It also studies the impact of different cooperation levels in the performance of Vehicular Delay-Tolerant Networks (VDTNs). It was shown that scenarios with a higher number of cooperative nodes present the best results in terms of bundle delivery delay.     

0.18μm铜金属双重镶嵌工艺中空间成像套刻精度分析

由于空间成像套刻(Overlay)技术的预算随集成电路(IC)设计规范的紧缩而吃紧,因此,Overlay测量技术准确度的重要意义也随之提高。通过对后开发(AfterDevelopDI)阶段和后蚀刻(AfterEtchFI)阶段的Overlay测量结果进行比较,研究了0.18μm设计规范下的铜金属双重镶嵌工艺过程中的Overlay准确度。在确保对同一个晶圆进行后开发(DI)阶段和后蚀刻(FI)阶段测试的条件下,我们对成品晶圆的5个工艺层进行了比较。此外,还利用CD-SEM(线宽-扫描电子显微镜)测量了某个工艺层(PolyGate)上的芯片内Overlay,并与采用分割线方法的光学Overlay测量结果进行了比较。发现对芯片内overlay的校准存在着严重的局限性,即在应用CD-SEM时缺乏合适的结构进行Overlay测量。我们还将继续为大家提供定量的比较结果,同时也会向大家推荐组合的CD-SEM测量结构,使其能够被应用到今后的光刻设计中。