The use of uncertainties to quantify quality

The paper explains that the quality of any test can be quantified by the uncertainty of the result. It shows that the uncertainty can be determined easily and reliably on the basis of the results obtained by the laboratory on a transfer standard, on a reference material or in an intercomparison.

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Resume L’article explique que la qualité d’un essai peut être quantifiée par l’incertitude du résultat. Il indique que l’incertitude peut aisément être déterminée, de manière fiable, à partir des résultats obtenus par le laboratoire pour un étalon de transfert, pour un matériau de reférence ou dans une intercomparaison.

     

Substrate transport and cocaine binding of human dopamine transporter is reduced by substitution of carboxyl tail with that of bovine dopamine transporter

A chimeric dopamine transporter (DAT) cDNA encoding mutant human DAT (hDAT) protein in which the intracellular carboxyl-terminal tail is replaced by that of the bovine dopamine transporter (bDAT) was constructed. The chimeric hDAT cDNA was expressed in COS-7 cells, and [3H]dopamine and [3H]MPP+ uptake and [3H]CFT binding capacities were assessed. Substrate transport and ligand binding of bDAT were reduced by 32-43% as a result of substitution of the carboxyl tail in hDAT, suggesting that the functional characteristics of bDAT arise from differences in the carboxyl tail between human and bovine DAT. Thus, it appears that the sequences encoded within the carboxyl terminal of DAT would be one of the important determinants for its functions.     

Enhanced radiative efficiency in GaN quantum dots grown by molecular beam epitaxy

Self-assembled GaN quantum dots (QDs), grown on AlN by molecular beam epitaxy, were investigated by time-resolved photoluminescence spectroscopy. We investigate the emission mechanism in GaN QDs by comparing the carrier recombination dynamics in single and multiple period QDs. At 100 K, the PL decay time in single period QD structures is considerably shorter than in stacked QDs. Compared to single period QDs, the room temperature PL efficiency is considerably enhanced in 20 period QDs due to the reduction in nonradiative recombination processes.     

Antiferroelectric lead zirconate thin films derived from acetate precursors

Antiferroelectric lead zirconate (PbZrO₃) films derived from acetate precursors have been fabricated on Pt/Ti-coated silicon wafers and fused silica at 700 °C with an automatic dip-coating process. Films formed directly on the metallized silicon wafer showed the coexistence of perovskite and pyrochlore phases. A pre-coated titania layer of about 10 nm facilitated the formation of the desired perovskite phase. Films deposited on fused silica exhibited interactions between lead and silica which inhibited the crystallization of the films. In this case, a pre-coated titania layer in the range 50–75 nm acted as a diffusion barrier layer, allowing the formation of the perovskite phase. Antiferroelectricity in the films was confirmed by X-ray superstructure, dielectric double hysteresis loops and d.c. bias behaviour at room temperature. The corresponding transverse electro-optic properties were also measured for films deposited on fused silica.     

A note on the boundary layer approach to the impulsively started flow past a flat plate

The second order boundary layer effects are considered for the classical problem of the impulsive motion past a flat plate. Although Stewartson [1], [2] showed clearly how the effect of the leading edge requires a finite time to enter the boundary layer when only first order effects are included, we see here how this second order contribution is noticed immediately throughout the layer, and so becomes the dominant contribution after the Rayleigh behaviour during this time.     

Micro-electro-discharge machining as microsensor fabrication technology

This paper presents the design and fabrication of three miniaturized mechanical sensors to demonstrate the three-dimensional machining capabilities of micro-electro-discharge machining (EDM). The first sensor is an inertial bi-axial inclination sensor. The displacement of an inertial mass is measured optically by means of a two-dimensional position sensitive device (PSD). The machining freedom of micro-EDM makes it possible to produce both sensor and housing in one monolithic structure. The second sensor is an inertial uni-axial inclination sensor, which demonstrates the compatibility of the micro-EDM technology with the conventional photolithographic micromachining technologies. The mechanical structure of the sensor is machined by micro-EDM and the capacitive sensing part is produced by lithography. The aim of the integration is to set up a hybrid technology, which inherits the benefits of both micro-EDM and photolithography. The third miniaturized sensor is a three-component force sensor. The mechanical structure of the force sensor converts forces into displacements, which are measured optically. The mechanical structure of the force sensor is produced by wire-EDM and micro-EDM.