A building-transmission model for improved propagation prediction in urban microcells

This paper presents a model for the propagation of radiowaves through buildings. The model can be used as a seamless extension to ray-based propagation prediction models that only consider external reflection and diffraction, as do most current models. This involves the use of so-called transmitted rays, which are traced through building walls. Outdoor-to-indoor propagation (building penetration) is automatically taken into account as a "by-product". The transmission model requires no information about each building's interior other than a specific attenuation factor that describes the global behavior of the field inside the building. This coefficient can be determined for individual buildings by measuring the excess loss associated with the propagation path through the building. It is shown, however, that no large errors are to be expected if all buildings are characterized by the average of the empirical values obtained in this study, at 1.9 GHz. Path loss predictions generated with the aid of the new model are shown and compared with measured data to illustrate the considerable improvement in accuracy that can be achieved in realistic urban microcell scenarios by taking into account building penetration and transmission.     

Thermally controlled wavelength locker integrated in widely tunable SGDBR-LD module

A sampled-grating distributed Bragg reflector laser module having an integrated multiwavelength locker has been developed and evaluated. The uniquely designed wavelength locker made of thermally controlled etalon has provided uniform wavelength monitoring and very stable wavelength locking in the 188-ITU grid channels (37 nm) with 25-GHz spacing. Over the case temperature from -5/spl deg/C to 65/spl deg/C, the laser wavelength was locked within /spl plusmn/0.5 GHz, and the total power consumption of the module was less than 4 W.     

Improvement of color temperature using independent control of red, green, blue luminance in AC plasma display panel

This paper presents a new driving scheme for the improvement and flexibility of a color temperature without sacrificing a peak white luminance using an independent control of the red (R), green (G), and blue (B) luminance in an alternating current plasma display panel (AC-PDP). The independent control for the R, G, and B emissions can be achieved by selective application of the various narrow auxiliary pulses to the R, G, and B address electrodes during a sustain-period. The auxiliary pulses can control the luminance levels independently from the R, G, and B cells by forming the fast and efficient plasma or by slight disturbing of the wall charge accumulation. By the application of various auxiliary pulses leading to the simultaneous control of each color's luminance, it is observed that the new driving scheme can improve the color temperature from 5396 K to 10 980 K in a 4-in test panel with almost the same peak white luminance as that of the conventional driving scheme.     

Meshing wireless personal area networks: Introducing IEEE 802.15.5

This article presents an overview of the IEEE project 802.15.5 that targets providing mesh capabilities to both high-rate and low-rate wireless personal area networks. Low-rate mesh is built on IEEE 802.15.4 MAC, while high-rate mesh utilizes IEEE 802.15.3 MAC. We seek to share our insights and motivations of the approach adopted in the major components of the standard instead of presenting a la carte items drawn in the specification. We hope this article helps readers of the 802.15.5 standard to better understand the rationale and intent of the protocol design.     

Design and Fabrication of Asymmetric MOSFETs Using a Novel Self-Aligned Structure

A novel asymmetric MOSFET with no lightly doped drain on the source side is simulated on bulk Si using a device simulator (SILVACO). To overcome the problems of the conventional asymmetric process, a novel asymmetric MOSFET using a mesa structure and a sidewall spacer gate is proposed, and it provides a self-alignment process, aggressive scaling, and better uniformity. First of all, we have compared the simulated characteristics of the asymmetric and symmetric MOSFETs. Basically, both asymmetric and symmetric MOSFETs have an n-type channel and the same physical parameters. Compared with the symmetric MOSFET, the asymmetric MOSFET shows better device performance. Moreover, we have successfully fabricated 50-nm asymmetric NMOSFETs based on simulation results and investigated its operation and characteristics.     

Hydrogenated amorphous silicon thin film transistor fabricated onplasma treated silicon nitride

We have demonstrated that the performance of the inverted staggered, hydrogenated amorphous silicon thin film transistor (a-Si:H TFT) is improved by a He, H₂, NH₃ or N₂ plasma treatment for a short time on the surface of silicon nitride (SiN _x) before a-Si:H deposition. With increasing plasma exposure time, the field-effect mobility increase at first and then decrease, but the threshold voltage changes little. The a-Si:H TFT with a 6-min N₂ plasma treatment on SiN_x exhibited a field effect mobility of 1.37 cm²/Vs, a threshold voltage of 4.2 V and a subthreshold slope of 0.34 V/dec. It is found that surface roughness of SiN_x is decreased and N concentration in the SiN _x at the surface region decreases using the plasma treatment     

A novel simplified process for fabricating a very high densityp-channel trench gate power MOSFET

A novel simplified fabrication method of a very high density p-channel trench gate power MOSFET using four mask layers and nitride/TEOS sidewall spacers is realized. The proposed process showed improved on-resistance characteristics of the device with increasing cell density and the cost-effective production capability due to the lesser number of processing steps. By using this process technique, a remarkably increased high density (100 Mcell/inch²) trench gate power MOSFET with a cell pitch of 2.5 μm could be effectively realized. The fabricated device had a low specific on-resistance of 1.1 mΩ-cm² with a breakdown voltage of -36 V     

Charge Transportation and Chirality in Liquid Crystalline Helical Network Phases of Achiral BTBT-Derived Polycatenar Molecules

First examples of multichain (polycatenar) compounds, based on the π-conjugated [1]benzothieno[3,2-b]benzothiophene unit are designed, synthesized, and their soft self-assembly and charge carrier mobility are investigated. These compounds, terminated by the new fan-shaped 2-brominated 3,4,5-trialkoxybenzoate moiety, form bicontinuous cubic liquid crystalline (LC) phases with helical network structure over extremely wide temperature ranges (>200 K), including ambient temperature. Compounds with short chains show an achiral cubic phase with the double network, which upon increasing the chain length, is at first replaced by a tetragonal 3D phase and then by a mirror symmetry is broken triple network cubic phase. In the networks, the capability of bypassing defects provides enhanced charge carrier mobility compared to imperfectly aligned columnar phases, and the charge transportation is non-dispersive, as only rarely observed for LC materials. At the transition to a semicrystalline helical network phase, the conductivity is further enhanced by almost one order of magnitude. In addition, a mirror symmetry broken isotropic liquid phase is formed beside the 3D phases, which upon chain elongation is removed and replaced by a hexagonal columnar LC phase.     

Metal gate-HfO/sub 2/ MOS structures on GaAs substrate with and without Si interlayer

In this letter, we studied the effects of post-deposition anneal (PDA) time and Si interface control layer (ICL) on the electrical characteristics of the MOS capacitor with high-/spl kappa/ (HfO/sub 2/) material on GaAs. Thin equivalent oxide thickness (EOT<3 nm) with excellent capacitance-voltage (C-V) characteristics has been obtained. The thickness of the Si ICL and PDA time were correlated with C-V characteristics. It was found that high temperature Si ICL deposition and longer PDA time at 600/spl deg/C improved the C-V shape, leakage current, and especially frequency dispersion (<5%).     

Equalization digital on-channel repeater in the single frequency networks

Digital On-Channel Repeater (DOCR) can be used for Single Frequency Networks (SFN's). It is much simple and low cost compared to Distributed Transmitter which needs Studio to Transmitter Link (STL). However, traditional DOCR has one of those defects such as a power limit, a long time system processing delay or a poor output signal quality. In order to overcome all of those defects, we introduce Equalization DOCR (EDOCR) which regenerates the original 8-VSB output signal with relatively short time system processing delay. Lab. and Field test results show that the EDOCR can eliminate the loop-back signal up to 5.5 dB with 5.5 /spl mu/s system processing delay. By using EDOCR, we can save spectrum resources and extend coverage areas.