Characterization of the Ion Beam Current Density of the RF Ion Source with Flat and Convex Extraction Systems

Silicon - The characterization of ion beam current density distribution and beam uniformity is crucial for improving broad-beam ion source technologies. The design of the broad ion beam extraction...     

Formalization of Ring Theory in PVS

This paper presents a PVS development of relevant results of the theory of rings. The PVS theory includes complete proofs of the three classical isomorphism theorems for rings, and characterizations of principal, prime and maximal ideals. Algebraic concepts and properties are specified and formalized as generally as possible allowing in this manner their application to other algebraic structures. The development provides the required elements to formalize important algebraic theorems. In particular, the paper presents the formalization of the general algebraic-theoretical version of the Chinese remainder theorem (CRT) for the theory of rings, as given in abstract algebra textbooks, proved as a consequence of the first isomorphism theorem. Also, the PVS theory includes a formalization of the number-theoretical version of CRT for the structure of integers, which is the version of CRT found in formalizations. CRT for integers is obtained as a consequence of the general version of CRT for the theory of rings.

     

Matrix Transformation in Boron Containing High-Temperature Co–Re–Cr Alloys

An addition of boron largely increases the ductility in polycrystalline high-temperature Co–Re alloys. Therefore, the effect of boron on the alloy structural characteristics is of high importance for the stability of the matrix at operational temperatures. Volume fractions of ε (hexagonal close-packed—hcp), γ (face-centered cubic—fcc) and σ (Cr₂Re₃ type) phases were measured at ambient and high temperatures (up to 1500 °C) for a boron-containing Co–17Re–23Cr alloy using neutron diffraction. The matrix phase undergoes an allotropic transformation from ε to γ structure at high temperatures, similar to pure cobalt and to the previously investigated, more complex Co–17Re–23Cr–1.2Ta–2.6C alloy. It was determined in this study that the transformation temperature depends on the boron content (0–1000 wt. ppm). Nevertheless, the transformation temperature did not change monotonically with the increase in the boron content but reached a minimum at approximately 200 ppm of boron. A probable reason is the interplay between the amount of boron in the matrix and the amount of σ phase, which binds hcp-stabilizing elements (Cr and Re). Moreover, borides were identified in alloys with high boron content.     

Imaging of two-dimensional unsaturated moisture flows in uncracked and cracked cement-based materials using electrical capacitance tomography

The development of visualizing tools to monitor unsaturated moisture flow in cement-based materials is of great importance, as most degradation processes in cement-based materials are connected to and take place in the presence moisture. This paper investigates the ability of electrical capacitance tomography (ECT) to image two-dimensional (2D) unsaturated moisture flow in cement-based materials. In ECT, the electrical permittivity distribution within an object is reconstructed based on measured capacitances between electrodes attached on the object’s surface. In a series of experiments, mortar specimens with and without discrete cracks were imaged with ECT during a 2D moisture ingress. The results show that ECT is able to monitor the evolution of the moisture flow, and to approximate the shape and position of the moisture front. These findings indicate that ECT is a viable method for monitoring and visualizing 2D unsaturated moisture flow in cement-based materials in the presence and absence of discrete cracks.     

Appraisal of Agriglass in Promoting Maize Production Under Abiotic Stress Conditions

An agriglass composition containing different oxides acts as a slow release for macro and micro nutrients and was chosen to improve maize yield under most important abiotic stresses which affecting agriculture development; salinity and drought. A field experiment was performed in salt affected soil (EC =?7.5 dSm^??1) by using different water deficit rates (I1 = 100, I2 = 85 and I3 = 70% of maize water requirements). Irrigation levels were located in main plots. Every main-plot divided into six sub-plots contained glassy fertilizer treatments [F1 = 55 kg fed^?1 with 1/2 mm diameter of agriglass (fed. =?4200 m²), F2 = 55 kg fed^?1 with 1 mm diameter, F3 = 80 kg fed^?1 with 1/2 mm diameter, F4 = 80 kg fed^?1 with 1 mm diameter, F5 = Recommendations of Ministry of Agriculture and F6 = control]. The experimental results demonstrated that, ears, straw, grains and biological yields increased with increasing both water and agriglass rates. Application of agriglass as a slow release fertilizer improved yield more than mineral fertilizer. Some growth parameters, water use efficiency (IWUE), macronutrients concentration and their relations were included. Other studies on residual effect of agriglass and the annual application rates to withstand salinity and drought stress by strategic crops are required.     

Effect of ZnO layer thickness upon optoelectrical properties of NiO/ ZnO heterojunction prepared at room temperature

In this work, p-NiO/n-ZnO heterostructures were successfully prepared at room temperature using RF sputtering technique. The influence of ZnO layer thickness on the performance of the heterojunction was investigated. The deposited ZnO layers have a hexagonal Wurtzite structure with preferable growth orientations along (002) and (103) for thinner films. Increasing the thickness results in more crystallographic orientation randomness. The current–voltage measurements of the realized heterojunctions showed a clear rectifying behavior. The measured ideality factor varies from 2.5 to 1.6 according to the thickness of ZnO layer. The series resistance of the device is enlarged with increasing ZnO thickness. The deduced parameters from the I–V characteristics suggest that 200 nm is the optimal thickness of the ZnO layer according to our experimental conditions. We attribute the relatively better performance of this thickness to achieving reasonable compensation between serial resistance and ideality factor. The best heterojunction was tested and successfully used as a UV detector.