On the capacity of a cellular CDMA system

It is shown that, particularly for terrestrial cellular telephony, the interference-suppression feature of CDMA (code division multiple access) can result in a many-fold increase in capacity over analog and even over competing digital techniques. A single-cell system, such as a hubbed satellite network, is addressed, and the basic expression for capacity is developed. The corresponding expressions for a multiple-cell system are derived. and the distribution on the number of users supportable per cell is determined. It is concluded that properly augmented and power-controlled multiple-cell CDMA promises a quantum increase in current cellular capacity     

A device to measure the cross-sectional area of soft connectivetissues

A device has been designed and fabricated to measure the cross-sectional area of soft connective tissues ex vivo. It consists of two displacement transducers; one sensing tissue thickness and the other sensing width. Outputs are recorded (via an analog to digital interface) using a personal computer. Numerical integration of a thickness versus width plot computes cross-sectional area. This plot also provides a quality check of acquired data. This device has been successfully used in biomechanical studies of rabbit patellar tendons, rat medial collateral ligaments, and dissected specimens of human fascia.     

Electrical and optical feedback in an InGaAs/InP light-amplifyingoptical switch (LAOS)

A circuit model for optical and electrical feedback has been developed to investigate the cause of negative differential resistance (NDR) switching in a series connected heterojunction phototransistor (HPT) light-emitting diode (LED) device. The model considers optical feedback from the light generated in the LED, electrical feedback from the holes thermally emitted over the LED cladding layer, nonlinear gain of the HPT, the Early effect, and leakage resistance. The analysis shows that either electrical or optical feedback can be the dominant cause for the NDR, depending upon their relative strengths. The NDR observed in the devices was caused primarily by electrical feedback since the optical feedback is weak. For low input power, avalanche breakdown appears to initiate the NDR in the devices although avalanching alone cannot cause NDR     

The analysis of solvation in ionic liquids and organic solvents using the Abraham linear free energy relationship

The contentions made in an earlier paper [J Chem Technol Biotechnol 80 : 133–137 (2005)] that the coefficients of the Abraham solvation equation do not provide meaningful information on the molecular properties of ionic liquid solvents is refuted. The objections noted in the earlier paper disappear when the solvation equation model is correctly applied to the experimental data. It is further shown that the coefficients of the Abraham solvation equations can be used to characterize ionic liquids and can be used to select solvents for the solubility of gaseous solutes. Copyright © 2006 Society of Chemical Industry     

The TMS320C30 floating-point digital signal processor

The 320C30 is a fast processor with a large memory space and floating-point-arithmetic capabilities. The authors describe the 320C30 architecture in detail, discussing both the internal organization of the device and the external interfaces. They also explain the pipeline structure, addressing software-related issues and constructs, and examine the development tools and support. Finally, they present examples of applications. Some of the major features of the 320C30 are: a 60-ns cycle time that results in execution of over 16 million instructions per second (MIPS) and over 33 million floating-point operations per second (Mflops); 32-bit data buses and 24-bit address buses for a 16M-word overall memory space; dual-access, 4 K×32-bit on-chip ROM and 2 K×32-bit on-chip RAM; a 64×32-bit program cache; a 32-bit integer/40-bit floating-point multiplier and ALU; eight extended-precision registers, eight auxiliary registers, and 23 control and status registers; generally single-cycle instructions; integer, floating-point, and logical operation; two- and three-operand instructions; an on-chip DMA controller; and fabrication in 1-μm CMOS technology and packaging in a 180-pin package. These facilitate FIR (finite impulse response) and IIR (infinite impulse response) filtering, telecommunications and speech applications, and graphics and image processing applications     

Self-aligning planarization and passivation for integration applications in III-V semiconductor devices

This work reports an easy planarization and passivation approach for the integration of III-V semiconductor devices. Vertically etched III-V semiconductor devices typically require sidewall passivation to suppress leakage currents and planarization of the passivation material for metal interconnection and device integration. It is, however, challenging to planarize all devices at once. This technique offers wafer-scale passivation and planarization that is automatically leveled to the device top in the 1-3-/spl mu/m vicinity surrounding each device. In this method, a dielectric hard mask is used to define the device area. An undercut structure is intentionally created below the hard mask, which is retained during the subsequent polymer spinning and anisotropic polymer etch back. The spin-on polymer that fills in the undercut seals the sidewalls for all the devices across the wafer. After the polymer etch back, the dielectric mask is removed leaving the polymer surrounding each device level with its device top to atomic scale flatness. This integration method is robust and is insensitive to spin-on polymer thickness, polymer etch nonuniformity, and device height difference. It prevents the polymer under the hard mask from etch-induced damage and creates a polymer-free device surface for metallization upon removal of the dielectric mask. We applied this integration technique in fabricating an InP-based photonic switch that consists of a mesa photodiode and a quantum-well waveguide modulator using benzocyclobutene (BCB) polymer. We demonstrated functional integrated photonic switches with high process yield of >90%, high breakdown voltage of >25 V, and low ohmic contact resistance of /spl sim/10 /spl Omega/. To the best of our knowledge, such an integration of a surface-normal photodiode and a lumped electroabsorption modulator with the use of BCB is the first to be implemented on a single substrate.     

Computer aided kinetic modeling with KMT and KME

The complexity of many chemical and refining reaction systems and the thus-derived tedious and time-consuming process of building the associated kinetic models have been major obstacles in the use of fundamental kinetics in the solution of chemical engineering problems. This review summarizes work aimed at removing theses obstacles. Our recent work that has led to the enhancement of the Kinetic Modeler's Toolbox (KMT) and the development of the Kinetic Model Editor (KME) presents an end-to-end solution to the kinetic modeling process, including automated feedstock modeling, reaction network construction, kinetic rate estimation, model programming, process system configurations, model customizations, compilations, model execution and results analysis.     

Consideration of measurement of electrostriction in quartz usingBragg reflection of X-rays

Calculation shows that the linear piezoelectric effect should be readily demonstrated in X-cut quartz by Bragg reflection of X-rays, equipment for which is available in every crystal finishing room. Electrostriction should also be observable and measurable in X-cut, Y-cut and Z-cut quartz, and in other cuts having their major surfaces parallel to X-ray diffracting planes of the crystal. Mechanical compression of the quartz due to the charge on the electrodes must be considered     

Factors in American State Government spending on research and development

This paper investigates factors that lead state governments in the United States to spend on research and development and research and development plant. Data come from a national survey of such spending. Regression analysis is used. Findings include the following: the relative wealth of a state, as measured by its tax capacity, predicts some of such spending; the level of a state's taxation, as measured by its tax effort, predicts some of such spending; and the political party composition of a state predicts some of such spending. By contrast, a state's economic difficulty, as measured by its unemployment rate, has almost no relationship to such spending.     

A vertically integrated GaAs bipolar dynamic RAM cell with storagetimes of 4.5 h at room temperature

The storage times of FET-accessed GaAs dynamic RAM cells are limited to less than 1 min at room temperature by gate leakage in the access transistor. These transistor leakage mechanisms have been eliminated by designing a vertically integrated DRAM cell in which an n-p-n bipolar access transistor is merged with a p-n-p storage capacitor. Storage times of 4.5 h are obtained at room temperature, a 1000-fold increase over the best FET-accessed cells