High dielectric constant thin film EBG power/ground network for broad-band suppression of SSN and radiated emissions

We experimentally demonstrated the great advantages of a high dielectric constant thin film electromagnetic bandgap (EBG) power distribution network (PDN) for the suppression of power/ground noises and radiated emissions in high-performance multilayer digital printed circuit boards (PCBs). Five-layer test PCBs were fabricated and their scattering parameters measured. The power plane noise and radiated emissions were measured, investigated and related to the PDN impedance. This successfully demonstrated that the bandgap of the EBG was extended more than three times, covering a range of hundreds of MHz using a 1-cm /spl times/ 1-cm EBG cell, the SSN was reduced from 170 mV to 10 mV and the radiated emission was suppressed by 22 dB because of the high dielectric constant thin film EBG power/ground network.     

Entities,identities, identifiers and credentials — what does it all mean?

This paper looks at the concepts of entities, identities, identifiers and credentials, their definitions, and how they combine to authenticate an identity to an account, or function, within a service. Credentials can be divided into several different types on the basis of their use, origin and characteristics. In particular, types such as composite, dynamic and derived credentials will be considered, and their applicability within an identity management system. Each credential must be managed through its entire life cycle from initial registration, general use and suspension, to deletion. The notion of public (i.e. freely distributable) and private (i.e. known only to you) aspects of a credential is explored. The bindings, by trusted third parties, of identifiers and public credentials into permits and instruments of proof is explained along with the convenience, but greater exposure, of local information. Several scenarios are analysed in terms of how different types of credentials are employed during the authentication process.     

Dielectric reliability of stacked Al2O3–HfO2 MIS capacitors with cylinder type for improving DRAM data retention characteristics

Dielectric reliability in Al₂O₃(2–3.1nm)–HfO₂(3nm) stack capacitor with Metal–Insulator–Si(MIS) structure is investigated in this paper. We propose an optimized capacitor process through the Time–Dependent Dielectric Breakdown (TDDB) data under various process conditions. Furthermore, due to asymmetric current at both negative and positive voltage stress polarities, we show different lifetime extrapolation by a fluence–driven model. As a result, the maximum allowed operating voltage is projected to be 1.7V (failure rate 10ppm during 10year @ 85°C) for Data “0” retention lifetime.     

Spectrum efficient region-based resource allocation with fractional loading for FH-OFDMA cellular systems

A practical resource management method that can significantly reduce cochannel interference (CCI) and improve spectrum utilisation in FH-OFDMA packet-based cellular networks is presented. The proposed method seeks an effective combination of dynamic resource allocation with fractional coding and bit loading to respectively minimise CCI and maximise system throughput for a desired performance.     

Grazing incidence reflection absorption Fourier transform infrared (GIRA-FTIR) spectroscopic studies on the ferroelectric behavior of poly(vinylidene fluoride–trifluoroethylene) ultrathin films

Grazing incidence reflection absorption Fourier transform infrared (GIRA-FTIR) spectroscopy was used to characterize the ferroelectric behavior of a thin poly(vinylidene fluoride–trifluoroethylene) P(VDF–TrFE) copolymer. The lab-built GIRA-FTIR apparatus allowed the heating and corona poling process to be carried out whilst collecting the GIRA spectra of the thin polymer film. The Curie transition from the ferroelectric to paraelectric phase was confirmed from the abrupt change in intensity of the 849 cm⁻¹ band in the RA-FTIR spectrum. It was found that the Curie temperature dropped dramatically when the film thickness was lowered to below a certain critical value of approximately 100 nm. The switching of the CF₂ dipoles in the ferroelectric crystals after applying the external electric field could be determined by monitoring the change in the 849 cm⁻¹ band intensity. For the 600 nm thick P(VDF–TrFE) film, the switching of the dipoles appears to occur almost instantaneously, while the kinetics of dipole switching of the 75 nm thick film were significantly retarded. The repeated switchability of the CF₂ dipoles upon the application of a bipolar cyclic electric field was also confirmed. The bistability of the film due to remnant polarization was also confirmed from the absorbance of the 849 cm⁻¹ band after removing the applied voltage during corona poling.     

Design and practical implementation of multifrequency RF front ends using direct RF sampling

The use of direct RF sampling has been explored as a means of designing multifrequency RF front ends. Such front ends will be useful to multifrequency RF applications such as global navigation satellite system receivers that use global positioning system (GPS) L1, L2, and L5 signals and Galileo signals. The design of a practical multifrequency direct RF sampling front end is dependent on having an analog-to-digital converter whose input bandwidth accommodates the highest carrier frequency and whose maximum sampling frequency is more than twice the cumulative bandwidth about the multiple carrier signals. The principle of direct RF sampling is used to alias all frequency bands of interest onto portions of the Nyquist bandwidth that do not overlap. This paper presents a new algorithm that finds the minimum sampling frequency that avoids overlap. This design approach requires a multifrequency bandpass filter for the frequency bands of interest. A prototype front end has been designed, built, and tested. It receives a GPS coarse/acquisition code at the L1 frequency and GPS antispoofing precision code at both L1 and L2. Dual-frequency signals with received carrier-to-noise ratios in excess of 52 dB-Hz have been acquired and tracked using this system.     

Observer design for autonomous discrete-time nonlinear systems

We obtain a necessary and sufficient condition for a discrete-time nonlinear system to be locally state equivalent to the nonlinear observer form. The result looks similar to the continuous counterpart except for the fact that Ad-operation is utilized instead of ad-operation.     

W-band divide-by-3 frequency divider using 0.1 /spl mu/m InAlAs/InGaAs metamorphic HEMT technology

A W-band divide-by-3 frequency divider with wide bandwidth and low power dissipation is presented using harmonic injection-locking technique. A cascode FET is employed for a self-oscillating second-harmonic mixer which is injection-locked by third-harmonic input to obtain the division order of three. The fabricated frequency divider using 0.1 /spl mu/m GaAs metamorphic HEMT technology shows superior performance such as large bandwidth of 6.1 GHz around 83.1 GHz (7.3%) under small DC power consumption of 12 mW.     

Stimulation of negative magnetoresistance by an electric field and light in silicon doped with boron and manganese

It is experimentally ascertained that light stimulates the negative magnetoresistance observed in a high electric field in silicon doped with boron and manganese. The optimum conditions (the electric field, temperature, illumination, and resistivity of the material) for observation of the largest magnitude of negative magnetoresistance in (Si:B):Mn are determined. The dependence of the negative magnetoresistance on the concentration of compensating impurity is established.     

2/spl times/4 optical add-drop module with no difference in propagation length

We developed a micromachined X-type 2/spl times/4 optical add-drop module (OADM) featuring no difference in propagation length. Four pairs of lensed fibers are aligned in "X" position, and four micromirrors are located between the pairs of optical fibers. The OADM was fabricated utilizing a silicon-on-insulator process. Electrostatic comb actuators can be driven up to 90 /spl mu/m to change the light path within 1 ms. The insertion loss and the on-off ratio were less than 3 and 70 dB, respectively. The loss uniformity in every channel was 1.5 dB.