基于时间自动机的Ad hoc网络入侵检测

该文提出一种基于时间自动机分布式合作的入侵检测算法。首先,将整个网络分为子区域,每一区域随机选出簇头担任监视节点,负责本区域的入侵检测。其次,按照路由协议构筑节点正常行为和入侵行为的时间自动机,监视节点收集其邻居节点的行为信息,利用时间自动机分析节点的行为,识别入侵者。该算法不需要事先进行数据训练并能够实时检测入侵行为。最后,通过模拟实验证实了算法的有效性。     

时间相干信道下波束赋形系统的有限反馈方法

该文提出一种新的基于树形码书的有限反馈方法,由于相邻帧的时间相干性,信道向量的量化码字可建模为一阶有限状态马尔可夫链,当前帧信道向量被量化到前一帧最大转移概率码字的子码字上,该子码字的索引以1 bit反馈给发射端。链路仿真结果表明本文所提方法相比普通反馈方法可明显改善误码率性能,某些条件下还可降低反馈速率。     

频偏对脉冲成型多载波系统性能的影响分析

该文提出了一种基于脉冲成型多载波系统中频偏对系统性能影响的分析方法。该方法首先把解调后的输出分为信号及频偏带来的ICI和ISI干扰,然后基于发送和接收成型脉冲的互模糊函数给出了信号和干扰的量化分析,最后利用发送信号的统计特性得到解调后输出的信干比。仿真结果表明,频偏带来的系统误码率和理论计算的信干比是一致的,从而验证了该方法的有效性。     

迭代结构的信源信道联合解码及其简化算法

信源信道联合解码算法中的迭代信道解码需要进行比特似然值和概率值转换,以及联乘、累加运算,增加了信道解码的计算复杂度,该文针对这一问题,直接利用信道解码的比特硬判决值和参数的先验概率,估计比特的外信息,用于迭代信道解码。基于高斯-马尔可夫信源参数的仿真实验表明,该简化算法大大降低了迭代信道解码算法的计算复杂度。与独立解码算法相比,简化的联合解码算法明显改善了接收参数的信噪比,同时不会明显降低原迭代结构解码算法的性能。     

10 Gb/s OEIC optical receiver front-end and 3.125 Gb/s PHEMT limiting amplifier

A 10 Gb/s OEIC (optoelectronic integrated circuit) optical receiver front-end has been studied and fab ricated based on the φ-76 mm GaAs PHEMT process; this is the first time that a limiting amplifier (LA) has been designed and realized using depletion mode PHEMT. An OEIC optical receiver front-end mode composed of an MSM photodiode and a current mode transimpedance amplifier (TIA) has been established and optimized by simu lation software ATLAS. The photodiode has a bandwidth of 10 GHz, a capacitance of 3 fF/μm and a photosensitive area of 50×50 μm~2. The whole chip has an area of 1511×666 μm~2. The LA bandwidth is expanded by spiral inductance which has been simulated by software HFSS. The chip area is 1950×1910μm~2 and the measured results demonstrate an input dynamic range of 34 dB (10-500 mVpp) with constant output swing of 500 tnVpp.     

Design of a high-order single-loop Σ△ ADC followed by a decimator in 0.18μm CMOS technology

This work presents an oversampled high-order single-loop single-bit sigma–delta analog-to-digital converter followed by a multi-stage decimation filter.Design details and measurement results for the whole chip are presented for a TSMC 0.18μm CMOS implementation to achieve virtually ideal 16-b performance over a baseband of 640 kHz.The modulator in this work is a fully differential circuit that operates from a single 1.8 V power supply. With an oversampling ratio of 64 and a clock rate of 81.92 MHz,the modulator achieves a 94 dB dynamic range. The decimator achieves a pass-band ripple of less than 0.01 dB,a stop-band attenuation of 80 dB and a transition band from 640 to 740 kHz.The whole chip consumes only 56 mW for a 1.28 MHz output rate and occupies a die area of 1×2 mm^2.     

A 10 GHz high-efficiency and low phase-noise negative-resistance oscillator optimized with a virtual loop model

A virtual loop model was built by the transmission analysis with virtual ground method to assist the negative-resistance oscillator design, providing more perspectives on output power and phase-noise optimization. In this work, the virtual loop described the original circuit successfully and the optimizations were effective. A 10 GHz high-efficiency low phase-noise oscillator utilizing an InGaP/GaAs HBT was achieved. The 10.028 GHz oscillator delivered an output power of over 15 dBm with a phase-noise of lower than -107 dBc/Hz at 100 kHz offset. The efficiency of DC to RF transformation was 35 %. The results led to a good oscillator figure of merit of-188 dBc/Hz. The measurement results agreed well with those of the simulations.     

第三代移动通信技术讲座第四章欧洲提出的W-CDMA(上)--IMT-2000无线传输候选技术之三

无线接入网络结构及其基本原理,UTRAN(UMTS陆地无线接入网络)的逻辑结构和功能,UTRAN接口,无线接口结构及协议,Iu接口及协议,无线接口协议结构,L1(第一层)物理层,L2层数据链路层,L3层网络层.L1 层的说明--传输信道和物理信道,复用、信道编码和交织,扩谱和调制,无线的发送和接收,增加性能和任选.UTRA(UMTS陆地无线接入)和GSM之间的切换.     

Thickness dependent gate oxide quality of thin thermal oxide grownon high temperature formed SiGe

For thin oxides grown on high temperature formed Si_0.3Ge_0.7, the gate oxide quality is strongly dependent on oxide thickness and improves as thickness reduces from 50 to 30 Å. The thinner 30 Å oxide has excellent quality as evidenced by the comparable leakage current, breakdown voltage, interface-trap density and charge-to-breakdown with conventional thermal oxide grown on Si. The achieved good oxide quality is due to the high temperature formed Si_0.3Ge_0.7 that is strain relaxed and stable during oxidation. The possible reason for strong thickness dependence may be due to the lower GeO₂ content formed in thinner 30 Å oxide rather than strain relaxation related rough surface or defects     

Imaging with solid immersion lenses, spatial resolution, and applications

Solid immersion microscopy, similar to liquid immersion microscopy, extends the diffraction limit by filling the object space with a high refractive index material, such as glass (index of refraction n=1.5-2), sapphire (n/spl sim/1.8), and semiconductor materials (n/spl sim/3), which shrink the wavelength of light. But solid immersion technique can achieve significantly higher spatial resolution since the refractive indices of available solids can be much higher than those of liquids (n=1.3-1.5). Besides high spatial resolution, solid immersion microscopy also possesses all the good properties of far-field imaging, such as high transmission efficiency and parallel imaging capability, which make it outstanding among beyond-the-diffraction-limit optical imaging techniques. In this paper, we discuss, from an experimental point of view, the resolution limit of solid immersion microscopy and the implementation of such technique in various applications.