A block-oriented RAM with half-sized DRAM cell and quasi-foldeddata-line architecture

The authors describe a block-oriented random-access memory (BORAM) based on a series-connected cell concept and a quasi-folded data-line architecture. The series-connected cell concept allows a nearly half-sized DRAM cell even when using the same fabrication process as for conventional DRAMs. The low-noise quasi-folded data-line architecture allows the data-line capacitance to be one eighth the conventional value at the minimum, or the number of cells per amplifier to be 64 times the conventional number at the maximum. In addition, this architecture provides a more relaxed layout for the READ/WRITE circuits. The operation of four series-connected cells is observed successfully through a test device which includes a voltage-to-current conversion circuit, a current-mirror amplifier, and a 0.76-μm² crown-shaped stack-capacitor (STC) cell     

Resistive transition in an extremely Two-Dimensional superconductor, α-(BEDT-TTF)2NH4Hg(SCN)4

In order to investigate the superconductivity in α-(BEDT-TTF)₂NH₄Hg(SCN)₄, resistivity was measured as a function of temperature, magnetic field and exciting current. In addition, simultaneous measurements of I-V characteristics and ac susceptibility were carried out. The results indicate highly two-dimensional character of the superconductivity.     

Arginine-481 mutation abolishes ligand-binding of the AMPA-selective glutamate receptor channel alpha1-subunit

Arginine-481 is located in the putative agonist-binding region preceding the putative transmembrane segment M1 of the alpha1-subunit of the AMPA-selective glutamate receptor (GluR) channel. This amino acid is completely conserved among GluR proteins. A site-directed mutagenesis study using a baculovirus expression system showed that substitution of glutamate, glutamine and lysine for arginine-481 of the recombinant alpha1-subunit protein abolishes binding to [3H]AMPA completely. The present study provides the first direct experimental evidence that the conserved charged arginine-481 residue is essential, directly or indirectly, for the acquisition of ligand-binding activity by the receptor protein.     

Transcranial Doppler ultrasonography to evaluate need for cerebrospinal fluid drainage in hydrocephalic children

We measured the metabolic changes in aldose and phosphorus metabolites in rabbit lenses incubated with tissue culture medium 199 (TCM 199) containing 20 mM glucose-1-13C, using 13C, 31P-NMR Spectroscopy (13C, 31P-MRS). Then we investigated the effects of aldose reductase inhibitor (ARI) on those metabolic changes, using the same method. In the incubated rabbit lenses, rapid increases were recognized in sorbitol, sorbitol-3-phosphate, and alpha-glycerophosphate. The levels of glucose, lactate, and adenosin triphosphate (ATP) did not change significantly. Once ARI was added, the levels of sorbitol and sorbitol-3-phosphate were reduced immediately, but the reduction of alpha-glycerophosphate needed some time after the addition of ARI. On the other hand, the levels of lactate increased approximately two-fold, and the levels of glucose and ATP did not change significantly. Considered with our other observations on the metabolic changes in alloxan induced diabetic rabbit lenses, and in rabbit lenses incubated with high concentrations (5-40 mM) of glucose-TCM 199 or 20 mM galactose-TCM 199, these results suggest that aldose reductase not only activates the polyol pathway but also controls the Embden-Meyerhof pathway, energetic metabolic changes, or phospholipid-associated metabolic changes.     

Wideband microwave amplifier with two antiparallel high-efficiency-diode pairs

A K-shaped antiparallel microstrip amplifier having four high-efficiency avalanche diodes has provided 400 W at 1.01 GHz with 8.8 dB power gain and 1.23% bandwidth. A novel fishbone-shaped tuning plate has worked not only to widen the bandwidth to 10%, but also, together with stagger-tuned antiparallel pairs, to increase the gain bandwidth from 94.8 MHz to 447 MHz.     

Crown-shaped stacked-capacitor cell for 1.5-V operation 64-Mb DRAMs

A self-aligned stacked-capacitor cell called the CROWN cell (a crown-shaped stacked-capacitor cell), used for experimental 64-Mb-DRAMs operated at 1.5 V, has been developed using 0.3-μm electron-beam lithography. This memory cell has an area of 1.28 μm². The word-line pitch and sense-amplifier pitch of this cell are 0.8 and 1.6 μm, respectively. In spite of this small cell area, the CROWN cell has a large capacitor surface area of 3.7 μm² because (1) it has a crown-shaped capacitor electrode, (2) its capacitor is on the data line, and (3) it has a self-aligned memory cell fabrication process and structure. The large capacitor area and a Ta₂O₅ film equivalent to a 2.8-nm SiO₂ film ensure a large storage charge of 33 fC (storage capacitance equals 44 fF) for 1.5-V operation. A small CROWN cell array and a memory test circuit were successfully used to achieve a basic DRAM cell operation     

Dehydrogenation process in orthorhombic hydrogen molybdenum bronze under vacuum heating

Dehydrogenation of orthorhombic hydrogen molybdenum bronze, H_0.30MoO₃, under vacuum heating was investigated using various techniques. The dehydrogenation occurrs in the form of the H₂O evolution from H_0.30MoO₃. The H₂O evolution with a rise in temperature proceeds in three steps: The first stage, up to ～287°C, is the formation of H_0.21MoO_2.95, corresponding to orthorhombic bronze with the lowest hydrogen content, and the second stage, ～287 to ～395°C, leads the formation of H_0.06MoO_2.88 isomorphous with MoO₃. The final stage finishes at ～446°C and yields MoO_2.86. The MoO_2.86 is a non-stoichiometric compound with the MoO₃ structure and transforms at ～610°C to a mixture of Mo₄O₁₁ and MoO₃, the equilibrium phase for the MoO_2.86 composition at 610°C.     

Polymerization of 1,3‐dienes containing functional groups: 8. Free‐radical polymerization of 2‐triethoxysilyl‐ 1,3‐butadiene

The presence of a bulky substituent at the 2‐position of 1,3‐butadiene derivatives is known to affect the polymerization behavior and microstructure of the resulting polymers. Free‐radical polymerization of 2‐triethoxysilyl‐1,3‐butadiene ( 1 ) was carried out under various conditions, and its polymerization behavior was compared with that of 2‐triethoxymethyl‐ and other silyl‐substituted butadienes. A sticky polymer of high 1,4‐structure ( ) was obtained in moderate yield by 2,2′‐azobisisobutyronitrile (AIBN)‐initiated polymerization. A smaller amount of Diels–Alder dimer was formed compared with the case of other silyl‐substituted butadienes. The rate of polymerization (R_p) was found to be R_p = k[AIBN]^0.5[ 1 ]^1.2, and the overall activation energy for polymerization was determined to be 117 kJ mol^?1. The monomer reactivity ratios in copolymerization with styrene were r ₁ = 2.65 and r_st = 0.26. The glass transition temperature of the polymer of 1 was found to be ?78 °C. Free‐radical polymerization of 1 proceeded smoothly to give the corresponding 1,4‐polydiene. The 1,4‐E content of the polymer was less compared with that of poly(2‐triethoxymethyl‐1,3‐butadiene) and poly(2‐triisopropoxysilyl‐1,3‐butadiene) prepared under similar conditions. Copyright © 2010 Society of Chemical Industry