Sub-50-nm physical gate length CMOS technology and beyond usingsteep halo

Sub-50-nm CMOS devices are investigated using steep halo and shallow source/drain extensions. By using a high-ramp-rate spike annealing (HRR-SA) process and high-dose halo, 45-nm CMOS devices are fabricated with drive currents of 650 and 300 μA/μm for an off current of less than 10 nA/μm at 1.2 V with T_ox^inv =2.5 nm. For an off current less than 300 nA/μm, 33-nm pMOSFETs have a high drive current of 400 uA/μm. Short-channel effect and reverse short-channel effect are suppressed simultaneously by using the HRR-SA process to activate a source/drain extension (SDE) after forming a deep source/drain (S/D). This process sequence is defined as a reverse-order S/D (R-S/D) formation. By using this formation, 24-nm nMOSFETs are achieved with a high drive current of 800 μA/μm for an off current of less than 300 μA/μm at 1.2 V. This high drive current might be a result of a steep halo structure reducing the spreading resistance of source/drain extensions     

Deep submicrometer super self-aligned Si bipolar technology with25.4 ps ECL

A new deep submicron double-poly self-aligned Si bipolar technology has been developed using a 0.3-μm design rule, a collector polysilicon trench electrode, and oxide-filled trench isolation. This technology is called “High-Performance Super Self-Aligned Process Technology” or HSST. 0.3-μm minimum patterning is achieved by electron-beam direct writing technology. The HSST bipolar transistor is 2.5 times smaller than the previous 1-μm SST-1B. Owing to its horizontal reduction and an f_T of 22.3 GHz at V_ce=1 V, the ECL gate attains 25.4 ps/G at 1.58 mA, which is a 30% improvement on the SST-1B. By including parasitic capacitances of the base polyelectrode and polyresistors, the ECL delay time is accurately simulated for low-power operation. It is shown that the HSST is a very promising technology for the development of future high-speed communication systems     

Effect of 8 MeV electron irradiation on electrical properties of CuInSe2 thin films

Radiation damages due to 8 MeV electron irradiation in electrical properties of CuInSe₂ thin films have been investigated. The n-type CuInSe₂ films in which the carrier concentration was about 3×10¹⁶ cm⁻³, were epitaxially grown on a GaAs(0 0 1) substrate by RF diode sputtering. No significant change in the electrical properties was observed under the electron fluence <3×10¹⁶ e cm⁻². As the electron fluence exceeded 10¹⁷ e cm⁻², both the carrier concentration and Hall mobility slightly decreased. The carrier removal rate was estimated to be about 0.8 cm⁻¹, which is slightly lower than that of III–V compound materials.     

Safety evaluation on the depressurization accident in the gas turbine high temperature reactor (GTHTR300)

Japan Atomic Energy Agency has been developing a gas turbine high temperature reactor (GTHTR300) with electric power of approximately 300 MW. One of the unique safety design concepts of this system is that events with frequency of occurrence of higher than 10⁻⁸/reactor-year are evaluated as design basis events in order to show that the frequency of large amount of FP release is less than 10⁻⁸/reactor-year. According to this concept, a depressurization accident by a large break of helium piping is postulated as a design basis event. This accident is one of the most serious accidents in the high-temperature gas-cooled reactors from the viewpoint of loss of coolability. The safety evaluation on the accident was conducted based on the actual design of the system. The short-term and long-term behaviors of fuel temperature after occurrence of the accident, internal pressure of the reactor building, oxidation behavior of fuels and graphite structures were evaluated and exposure dose of general public was also estimated using the results of evaluation of fuel temperature and fuel failure by oxidation. All of the evaluation results meet the safety criteria and feasibility of the GTHTR300 was shown by this study.     

Thermal Transformation of Ring-Opened [2 2] C60 Dimer into a Wide-Bridged C120 Isomer. A Computational Evaluation of Fulvalene-Naphthalene Rearrangements

As a continuation of the studies on thermal transformation of the [2+2] C₆₀ dimer (1), the consequence of the pyracylene-rearrangement-like valence isomerization of the fulvalene partial structure at the bridge of the ring-opened product from 1, namely 2, was searched by dynamic reaction coordinate /AM1 semiempirical MO calculations. It is predicted that the fulvalene bridge of 2 rearranges into naphthalene partial structure by the concerted 'in-plane' mechanism to give a wide-bridged C₁₂₀ intermediate having twenty five-membered rings and two ten-membered rings (3). The computed energy of activation (145 kcal/mol) is 40 kcal/mol lower than those computed for pyracylene rearrangements. In contrast, the recently reported analogous rearrangement of indigo (13) to dibenzonaphthyridindione (14) is computed to occur by the stepwise 'sp³' mechanism.     

Theory and characteristics of novel variable reluctance 1X resolver

Although brushless resolvers have been used widely as angular position transducers, they are expensive due to their intricate construction, involving a rotary transformer to supply the exciting coils wound on the rotor poles with the current. It is shown theoretically in this paper that the resolver without rotary transformer or brushes can be realized by simple construction, which consists of the stator core with both 4-poles exciting windings and 2-poles output ones and the rotor core carrying no windings. In this resolver the rotor core has minimum gap at one side and a maximum gap at another side of the diameter. It is characterized by an outer surface form that makes the fluctuation part of gap permeance very in proportion to cos θ, where θ represents the angular position of a point in the air gap with respect to the origin on the rotor, the point of minimum air gap. The method determining the rotor form to embody the aforementioned gap permeance variation is also shown. It has been confirmed not only by simulation but also experiment that the 2-phase output voltages of a model designed based on the theory have sinusoidal waveforms with very small harmonic contents. Moreover, the rotor position detected by processing the output voltages through the conventional resolver/digital converter was within acceptable engineering accuracy.     

Characteristics of IgA anti-HIV antibodies in plasma from patients with HIV infection

The concentration of total IgA and the specificity and molecular size of IgA anti-human immunodeficiency virus (HIV) type-1 antibodies in plasma obtained from individuals at different stages of HIV infection were analyzed. The concentration of total IgA in the plasma was not decreased even in the late stage of HIV infection, in contrast with those of total IgG and IgM. The IgA anti-HIV antibodies differed to the IgG anti-HIV antibodies in their specificity as determined by Western blotting. The IgA antibodies mainly bind to Env glycoproteins. The IgA anti-HIV antibodies in plasma were detected between IgG and IgM by gel filtration, suggesting the presence of polymeric IgA anti-HIV antibodies. These results indicate that the production of non-specific IgA in plasma is enhanced by unknown mechanisms in every stages of HIV infection, and suggest that IgA anti-HIV antibodies in plasma which are possibly polymeric and have unique specificity may play an important role in HIV infection.     

Identification of Eucalyptus citriodora clones micropropagated in tissue culture

The extent of genetic identity observed in the young individuals which were micropropagated from a single Eucalyptus individual was analyzed by using DNA-fingerprinting. Among 40,000 tissue-cultured-seedings of E.citriodora, 200 plants were randomly chosen so that each total DNA might be extracted from their leaves. Using these DNAs as template, PCR was performed with some primers we found in advance that leads polymorphism for DNA of E. citriodora. In this study, all over the 200 cases, the band pattern formed cDNA fragment on a gel after electrophoresis was the identical one mutually.     

The Ig heavy chain gene is frequently involved in chromosomal translocations in multiple myeloma and plasma cell leukemia as detected by in situ hybridization

Chromosome rearrangement of 14q32.33 has recurrently occurred with variable partner sites, including 11q13.3, 8q24.1, 18q21.3, and 6p21.1 in multiple myeloma (MM). To assess the actual incidence of 14q32.33 translocation and to elucidate its implication in the pathogenesis of MM, we studied 42 patients with MM, plasma cell leukemia, or plasmacytoma and 5 with monoclonal gammopathy with undetermined significance (MGUS) by G-banding and molecular cytogenetic methods. Using double-color fluorescence in situ hybridization (DCFISH) with 2 Ig heavy chain (IgH) gene probes, a yeast artificial chromosome (YAC) clone containing variable region, and a phage clone containing gamma constant region, 14q32.33 translocation was detected as split signals of the IgH gene in 31 patients with plasma cell malignancies and 3 with MGUS. In contrast, of 40 patients who were assessed by G-banding, 3 (7.5%) showed the 14q+ chromosome. DCFISH detected a split of the IgH gene on interphase nuclei in 34 (73.9%) of 46 patients analyzed, whereas on metaphase spreads, it was in 22 (51.2%) of 43 patients analyzed. Interphase DCFISH was particularly useful to detect 14q32.33 translocation in 17 (65.4%) of 26 patients with normal karyotypes. Donor sites were identified in 11 of 22 patients demonstrated as carrying 14q32.33 translocation by metaphase FISH. Chromosome t(11;14)(q13.3; q32.33) was detected in 5 patients, t(8;14)(q24.1;q32.33) in 2, t(14;18)(q32.33;q21.3) in 2, and t(7;14)(q32.1;q32.33) in 1. A complex 14q32.33 translocation involving 3q and 16q24 was detected in 1 patient. Myeloma cells with t(7;14) showed myelomonocytoid surface antigen. Because rearrangements of 14q32.33 were closely associated with translocation of proto-oncogenes into the IgH gene, our findings indicate that 14q32.33 translocation with various partner chromosomes is a critical event in the pathogenesis of MM and MGUS.