Germanium recovery using polyphenol microspheres prepared by horseradish peroxidase reaction

BACKGROUND: The formation of polyphenol microspheres by the polymerization of 3‐methylcatechol was performed in a methanol/phosphate buffer solution using horseradish peroxidase (HRP), without the use of a surfactant or a water/oil interface, to be used for germanium recovery. RESULTS: The polyphenol microspheres were of diameter 1 mm. The functional group density of phenol group in the polymer was approximately 15 mol kg^?1 determined by the Folin‐Denis method. In batchwise experiments, the amount of germanium adsorbed was 0.23 mol kg^?1. CONCLUSION: Because germanium is a rare metal, a system for its recovery is required. Using the proposed system, continuous recovery of germanium can be achieved using multilayered microspheres. Copyright © 2011 Society of Chemical Industry     

Development of a new X-ray source using backscattered X-ray with the use of a cold cathode

The development of an intense X-ray source using backscattered X-ray produced using an advanced electrode configuration is described. The electrodes were composed of field emitters deposited on a wire mounted on a perforated plate as the cathode and a copper plate as the anode. Electrons from these emitters collided with the copper plate and X-ray was generated at collision points. The backscattered X-ray in the direction normal to the electron trajectory through a hole in the anode escaped from the vacuum chamber through a beryllium window. Continuous and characteristic X-rays were detected at an applied voltage lower than that of a conventional X-ray source from 3.0 to 9.4 kV, respectively. Moreover, the X-ray dosage measured with a survey meter reached 0.95 mSv/h at 5.0 kV of applied voltage. The transmission images of three types of material used as an X-ray source for the X-ray imaging system indicate three advantages; low power consumption, focal point controllable by adjusting applied voltage, and photographable motion picture of X-ray transmission.     

The Anomalous Optical Conductivity of Metallic La2?xSrxCuO4

The in-plane optical conductivity of three metallic La_2–x Sr _x CuO₄ single crystals with 0.10 x 0.15 has been studied between 30 and 295 K. Strong peaks in the far-infrared are observed, which cannot be explained by Drude-like models. Their similarity with peaks reported in Cu–O ladders with one-dimensional charge-ordering, their extremely low frequency, and their behavior with temperature allows us to conclude that those anomalous features are excitations of charge stripes in the Cu–O planes.     

Novel circular-beam equalizing techniques that use graded-index fiber optics for a high-power laser diode

We demonstrate a novel method of equalizing a laser diode (LD) beam into a circular beam. This method uses the twist effect of graded index (GI) fiber optics. An asymmetric LD beam with beam qualities of M2 = 500 in the slow axis and M2 = 4 in the fast axis is converted successfully into a symmetric circular beam with a beam quality of M2 = 175. The circular-output beam with 92% coupling efficiency from the fiber input to the fiber output is obtained with a 5-m-long GI1200 (1200 means a core diameter of 1200 microm) fiber for a 2-W LD array. We extend the experiments to a higher-power source with higher asymmetric beam qualities of M2 = 3000 and M2 = 4. By slightly bending the GI10000 (10000 means a core diameter of 10,000 microm) fiber, we have succeeded in generating a symmetric beam with a improved beam quality of M2 = 2000. The average beam quality is preserved when the asymmetric ratio is not high, and the beam quality degradation ratio is investigated up to asymmetric ratios of 750.     

TEM Observations of the Initial Oxidation Stages of Nb-Ion-Implanted TiAl

Coupon specimens of TiAl were implanted with Nb ions at an acceleration voltage of 50 kV with a dose of 10²¹ ions m.^–2 They were then slightly oxidized during heating to 900 or 1200 K, or at 1200 K for 3.6 ksec (1 hr) in a flow of purified oxygen under atmospheric pressure. The implanted specimens and oxidized specimens were characterized and observed by AES, X-ray diffractometry, SEM, TEM, EDS, and EPMA. Implantation improves the oxidation resistance significantly by forming virtually -Al₂O₃ scales. The implanted layer is about 75 nm thick; the outer part of 30-nm thickness is -Ti phase and the rest of 45-nm thickness is amorphous. Heating to 900 K in O₂ results in partial crystallization of the amorphous layer to Ti₅Al₃O₂ (Z-phase) and to 1200 K results in oxide scales of 270 to 400 nm thickness consisting mainly of Al₂O₃. The fraction of Al₂O₃ in the scale increases toward the substrate. Oxidation at 1200 K for 3.6 ksec results in Al₂O₃-rich scales of about 400-nm thickness. The oxide grain size is very fine, about 80 nm in size, and becomes smaller toward the outer scale surface. This implies that implantation enhanced the nucleation of Al₂O₃ grains relative to the growth of TiO₂ grains. This finding and the formation of -Ti phase are thought to be responsible for the excellent oxidation resistance obtained.     

Effect of temperature on friction observed between a Si3N4 tip and a dodecanethiol self-assembled monolayer on Au(1 1 1)

Recent computational studies (Phys. Rev. Lett. 70 (1993) 1960; Phys. Rev. B 62 (2000) 17055) predicted that friction of ordered organic monolayer had characteristic dependence on temperature, where the maximum friction was observed around rotator transition point of the monolayer. This remained to be confirmed experimentally. Using a friction force microscope (FFM) combined with a temperature regulation module, we attempted to investigate such dependence on temperature (130 K-room temperature) on a self-assembled monolayer of dodecanethiol prepared on Au(1 1 1). The observed friction showed strong dependence on temperature and good agreement with the computational prediction.     

Structural evolution in Fe ion implanted Si upon thermal annealing

We have performed high-dose Fe ion implantation into Si and characterized ion-beam-induced microstructures as well as annealing-induced ones using transmission electron microscopy (TEM) and grazing-incidence X-ray diffraction (GIXRD). Single crystals of Si(1 0 0) substrate were irradiated at 623 K with 120 keV Fe⁺ ions to a fluence of 4 × 10¹⁷ cm⁻². The irradiated samples were then annealed in a vacuum furnace at temperatures ranging from 773 K to 1073 K. Cross-sectional TEM observations and GIXRD measurements revealed that a layered structure is formed in the as-implanted specimen with ε-FeSi, β-FeSi₂ and damaged Si, as component layers. A continuous β-FeSi₂ layer was formed on the topmost layer of the Si substrate after thermal annealing.     

Intra-body data transmission for the personal area network

Intra-body communication is a wireless means of exchanging information within a personal area network (PAN) between wearable electronic sensors and devices. The feasibility of intra-body communication is confirmed through several experiments on signal propagation within the human body, and a human phantom is designed and used to obtain reproducible results over repeated experiments. Based on the results of these experiments, a prototype transmission system is constructed using aluminum electrodes powered by 3 V DC and operating in the 10.7 MHz frequency modulation (FM) band. This prototype is demonstrated to be capable of transmitting analog signals through the human subjects in the presence of external noise. Digital data transmission at 9600 bps is also achieved using newly fabricated 10.7 MHz frequency shift keying (FSK) transmitter and receiver devices. The carrier frequency of 10.7 MHz is the intermediate frequency of FM radio receivers, meaning that the proposed system can make use of a wide selection of inexpensive, commercial radio frequency devices.