Development of a high‐resolution RGBW flexible display using a white organic light‐emitting diode with microcavity structure and that of a side‐roll touch panel

In this study, white organic electroluminescent devices with microcavity structures were developed. A flexible high‐resolution active‐matrix organic light‐emitting diode display with low power consumption using red, green, blue, and white sub‐pixels formed by a color‐filter method was fabricated. In addition, a side‐roll touch display was developed in combination with a capacitive flexible touch screen.     

Doped Helium Crystals Growth and Study

No Heading The new technique for embedding microimpurities into solid helium has been developed. A He crystal was grown in a vertical cylindrical cell placed in the bath of pumped LHe cryostat. The He solid was continuously moved downward by exhaust of helium from the cell bottom and was simultaneously restored from its upper edge by sedimentation of a jet of gas helium mixed with impurity. A guest particle density of 3· 10¹⁹ per cc and stable during an hour doped crystal growth with the rate of 1 mm per 20 s were achieved. The solid Deuterium clusters isolated in solid Helium have been investigated at T = 1.3K and P = 3 MPa by CARS technique. The strong effect of Raman scattering sensitivity to the molecular environment nuclear spin has been found in CARS - the ratio of probabilities for the scattering by para (J=1) and ortho (J=0) deuterium being equal to 1 in a gas is as high as 10,000 in nearly pure o-D₂, whereas it is 50 in common Raman scattering. This effect has been shown to give rise starting from cluster size corresponding to the phonon band onset.PACS numbers: 33.20 Fb; 33.70 Jg: 67.80 Mg     

Mercuric chloride induces increases in both cytoplasmic and nuclear free calcium ions through a protein phosphorylation-linked mechanism

The mechanism of the lymphocyte stimulatory action of sulfhydryl group-reactive mercuric ions was studied with respect to its potential ability to induce a protein tyrosine phosphorylation-linked signal for mobilization of free Ca2+ into cytoplasm and nucleus of the cell. Exposure of human leukamic T cell line (Jurkat) cells to high (1 mM) and low (0.01 mM) concentrations of HgCl2 induced tyrosine phosphorylation of multiple proteins in a concentration-dependent manner. Confocal microscopy directly visualized the time course localization of Ca2+ inside the cells after exposure to HgCl2. The onset and level of Ca2+ mobilization following HgCl2 exposure were in parallel to those of protein tyrosine phosphorylation. Interestingly, by either concentration of HgCl2, Ca2+ was mobilized in both cytoplasm and nucleus almost simultaneously, and the level of Ca2+ mobilization in the nucleus was more than that in the cytoplasm. All the HgCl2-mediated Ca2+ mobilization was prevented by addition of protein kinase inhibitor staurosporin prior to HgCl2. These results suggest that heavy metal stress triggers a protein tyrosine phosphorylation-linked signal that leads to a nuclear event-dominant Ca2+ mobilization.     

A bag carrier for continuous intravenous hyperalimentation

We designed a new bag-carrier device system for continuous intravenous hyperalimentation. The patient carries it on his shoulder and can both walk up and down stairs and go out. The use of this device is simple and easy, and was found to increase the patient's opportunity to engage in physical activity.     

Single molecule fluorescence autocorrelation measurement on anisotropic molecular diffusion in nematic liquid crystal

Diffusion kinetics of three dyes in nematic liquid crystals are studied with single-molecule fluorescence autocorrelation spectroscopy. Markedly large anisotropy was observed in the diffusion coefficient and structure of diffusion molecules showed no marked effect on the anisotropy.     

Position control for a linear slider with twin linear drives

In this paper, position control of a linear slider with twin linear drives is considered. Recently, for high‐speed response, several linear motors have been used for linear slider systems. In such a linear slider, if the linear drives are controlled individually, their position responses may undergo vibrational disturbance by interaction with the output of the motors. To control this vibration, this paper presents a dynamic model of a linear slider system which consists of two motion systems decoupled by coordinate transformation, and proposes a feedback controller which is designed for these two decoupled systems. The effectiveness of the proposed method is confirmed by experiments. © 2004 Wiley Periodicals, Inc. Electr Eng Jpn, 147(4): 68–76, 2004; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.10291     

Mechanical properties of porous methyl silsesquioxane and nanoclustering silica films using atomic force microscope

Mechanical properties of porous methyl silsesquioxane samples with dielectric constant 2.4 and 2.0 and a recently developed nanoclustering silica film samples with dielectric constants 2.3 and 2.0 were evaluated using an atomic force microscope based nanoindentation. It was found that the Young’s modulus and the hardness decrease while the fracture toughness increases with a decrease in the dielectric constant in the same type of material. Moreover, the Young’s modulus and the hardness of the nanoclustering silica films were observed to be at least twice and fracture toughness values ~1.3–1.5 higher than those for methyl silsesquioxane films with similar dielectric constants. The high resolution topographic imaging capability of atomic force microscope was shown to be particularly useful in the measurement of cracks generated by the ultra-low indentation loads, and the evaluation of the fracture toughness of the nanoscale volumes of materials.     

Microstructures of Annealed TiNiSn-Based Alloy Ribbons

The thermoelectric half-Heusler compounds Ti _x NiSn_0.998Sb_0.002 (x = 1.0 to 1.2) and Ti _y Zr_0.25Hf_0.25NiSn_0.998Sb_0.002 (y = 0.5 to 0.65) with nonstoichiometric nominal compositions were prepared by spin-casting and subsequent annealing at 1073 K for 24 h. The dimensionless figure of merit ZT at room temperature was maximized at x = 1.1 and y = 0.6 in Ti-rich compounds through an increase in absolute Seebeck coefficients despite a decrease in electrical conductivities. ZT reached 0.07 at x = 1.1 and 0.14 at y = 0.6. In powder x-ray diffraction analysis, minor phases of β-Sn, TiNi, Ti₂Sn, and Ti₅Sn₃ were observed in addition to a major phase of half-Heusler. The quantity of the minor phases was minimized at x = 1.1 and y = 0.55, where the absolute Seebeck coefficients are maximized. In transmission electron microscopic (TEM) analysis of Ti_0.55Zr_0.25Hf_0.25NiSn_0.998Sb_0.002, crystal grains of the half-Heusler phase, from several hundred nanometers to several micrometers in size, were observed. TEM energy-dispersive spectroscopy measurements indicated that fluctuations of Ti, Zr, and Hf compositions within the Ti-site in the half-Heusler phase may occur. Thermoelectric properties were improved at x = 1.1 and y = 0.6 rather than at the stoichiometric compositions of x = 1.0 and y = 0.5 due to minimization of the precipitate quantities.     

Effect of microstructures on dielectric breakdown strength of sintered reaction-bonded silicon nitride ceramics

Silicon nitride (Si₃N₄) was prepared from silicon by a sintered reaction-bonded silicon nitride method using yttria and magnesia as sintering additives. Post-sintering (PS) of nitrided compacts was carried out at 1850°C under a nitrogen pressure of 1 MPa. Effect of PS time on microstructure and dielectric breakdown strength (DBS) of the prepared Si₃N₄ ceramics was evaluated. The DBS was measured using specimens with four different thicknesses (0.30, 0.20, 0.10, and 0.05 mm) in order to examine the thickness dependence. The porosity of the sintered Si₃N₄ decreased by prolonging the PS time, and the full density could be achieved at the PS time of over 6 h. After full densification, rod-like β-Si₃N₄ grains grew up, and their maximum grain size increased from 45.1 to 154.7 μm by prolonging the PS time from 6 to 48 h. The DBS of the thick Si₃N₄ substrates (0.30 mm) showed little variation from 35.4 to 47.0 kV/mm, regardless of the PS time. On the other hand, that of the thin ones (0.05 mm) dramatically decreased from 99.5 to 9.8 kV/mm with increased the PS time from 6 to 48 h. Because the DBS sharply decreased at the thin substrate sintered for longer time in which some large-elongated grains might span the substrate thickness-wise throughout, it was inferred that the interface between β-Si₃N₄ grains and grain boundary phase/intergranular glassy films might be a path of the dielectric breakdown.