A 286 mm2 256 Mb DRAM with ×32 both-ends DQ

This paper describes a 256 Mb DRAM chip architecture which provides up to ×32 wide organization. In order to minimize the die size, three new techniques: an exchangeable hierarchical data line structure, an irregular sense amp layout, and a split address bus with local redrive scheme in the both-ends DQ were introduced. A chip has been developed based on the architecture with 0.25 μm CMOS technology. The chip measures 13.25 mm×21.55 mm, which is the smallest 256 Mb DRAM ever reported. A row address strobe (RAS) access time of 26 ns was obtained under 2.8 V power supply and 85°C. In addition, a 100 MHz×32 page mode operation, namely 400 M byte/s data rate, in the standard extended data output (EDO) cycle has been successfully demonstrated     

Low-threshold, highly reliable 630 nm-band AlGaIP visible laserdiodes with AlInP buried waveguide

Low-threshold, highly reliable 630 nm-band AlGaInP visible laser diodes have been developed by employing a low-loss optical waveguide buried in the AlInP layer. A low-threshold current of 19 mA at 25°C is obtained with a cavity length of 310 μm. This current is the lowest value for 630 nm-band AlGaInP visible laser diodes, to our knowledge. Our AlInP-buried laser diodes with a cavity length of 500 μm operated over 7000 h without significant degradation at 60°C and 5 mW     

An evaluation method of the fluctuation characteristics of photovoltaic systems by using frequency analysis

Short-time fluctuations in solar irradiance will become an important issue with regard to future embedded photovoltaic (PV) systems. However, when PV systems are intensively installed, fluctuation of total output in clustered PV systems is not remarkable because there is the smoothing effect of irradiance in certain areas. In this paper, a new estimation method of irradiance fluctuation, which is based on the combination of the Fourier transform and the wavelet transform methods, is described.     

Preparation and properties of CuInS2 thin film prepared from electroplated precursor

Thin CuInS₂ films were prepared by sulfurization of Cu/In bi-layers. First, the precursor layer was electroplated onto the treated surface of Mo-coated glass. Observation of the cross-section prepared by focused ion beam (FIB) etching revealed that the void-free film was initially formed on the top surface of the precursor layer and continued to grow until the advancing front of the film reached the Mo layer. The nucleation of voids near the bottom of the CuInS₂ film followed. To determine whether the condition of the Cu/In alloy influences the CuInS₂ quality we investigated the Cu/In alloy state using FIB. We found that the annealed precursor of low Cu/In ratio (1.2) has several voids in the mid position in the layer compared with Cu-rich precursor (1.6). The cross-sectional view of the Cu-rich absorber layer is uniform compared with the low copper absorber layer. Thin film solar cells were fabricated using the CuInS₂ film (Cu/In ratio: 1.2) as an optical absorber layer. It was found that the optimization of a sulfurization period is important in order to improve the cell efficiency. We have not yet obtained good results with high Cu-rich absorber because of a blister problem. This blister was found before sulfurization. So, we are going to solve this blister problem before sulfurization.     

Optical frequency domain ranging by a frequency-shifted feedbacklaser

This paper describes the theoretical and experimental study of a new technique for optical frequency domain ranging (OFDR) by a frequency-shifted feedback (FSF) laser. In conventional OFDR, a frequency chirped single-mode laser is used as a light source to convert a distance into a beat frequency, and a tradeoff exists between measurement range and resolution. The FSF laser output consists of periodically generated chirped frequency components whose chirp rate is faster than 100 PHz/s (P=10¹⁵), By use of the FSF laser, the tradeoff is removed and long-distance high-resolution OFDR is realized In the experiment, a distance of 18.5 km was measured with a resolution of 20 mm     

Photoactive Electro-Controlled Visual Perception Memory for Emulating Synaptic Metaplasticity and Hebbian Learning

In bionic technology, it has become an innovative process imitating the functionality and structuralism of human biological systems to exploit advanced artificial intelligent machines. Bionics plays a significant role in environmental protection, especially for its low energy loss. By fusing the concept of receptor-like sensing component and synapse-like memory, the photoactive electro-controlled optical sensory memory (PE-SM) is proposed and realized in a single device, which endows a simple methodology of reducing power consumption by photoactive electro-control. The PE-SM is the system built with the stacked atomically thick materials, in which rhenium diselenide serves as a robust photosensor, hexagonal boron nitride serves as a tunneling dielectric, and graphene serves as a charge-storage layer. With the features of the PE-SM, it performs synaptic metaplasticities under optical spikes. In addition, a simulated spiking neural network composed of 24 × 24 PE-SMs is further presented in an unsupervised machine learning environment, performing image recognition via the Hebbian rule. The PE-SM not only improves the neuromorphic computing efficiency but also simplifies the circuit-size structure. Eventually, the concept of photoactive electro-control can extend to other photosensitive 2D materials and provide a new approach of constructing either visual perception memory or photonic synaptic devices.     

Quantum Oscillations of Thermoelectric Effects in a Pseudo-one-dimensional Electron Gas With a Spin–Orbit Interaction

We consider thermoelectric effects in a pseudo-one-dimensional electron gas (P1DEG) with a spin–orbit interaction (SOI). The SOI splits the dispersion relation of the P1DEG into subbands with an energy gap. We find quantum oscillations in transport coefficients, which coincide with the locations of the subband edges, as a function of the electrochemical potential.     

Enhancement of adhesion strength of Cu layer with low dielectric constant SiC:H liners in Cu interconnects

One of the primary candidates for the liner/etch stop layer in damascene process is silicon nitride (Si₃N₄). However, silicon nitride has a high dielectric constant of 7.0. To reduce the effective dielectric constant in Copper (Cu) damascene structure, dielectric SiC:H (prepared by plasma enhanced chemical vapor deposition (PECVD) using trimethylsilane source) as the Cu diffusion barrier was studied. The dielectric constant of SiC:H used is 4.2. A systematic study was made on the properties of liner material and electro-chemically plated (ECP) Cu to enhance the adhesion strength in Cu/low-dielectric constant (k) multilevel interconnects. Though the effects of as Si₃N₄ the liner have been much studied in the past, less is known about the relation between adhesion strength of ECP Cu layer and physical vapor deposited (PVD) Cu seeds, with seed thickness below 1000 Å. The annealing of Cu seed layer was carried out at 200 °C in N₂ ambient for 30 min was carried out to study the impact on adhesion strength and the microstructure evolution on the adhesion between ECP Cu and its barrier layer. In the study, our claim that SiC:H barrier/etch stop layer is essential for replacing conventional Si₃N₄ layer in enhancing adhesion strength and interfacial bonding between Cu/dielectric interconnects.     

Novel Conjugated Organic Dyes for Efficient Dye‐Sensitized Solar Cells

Novel conjugated organic dyes that have N,N‐dimethylaniline (DMA) moieties as the electron donor and a cyanoacetic acid (CAA) moiety as the electron acceptor were developed for use in dye‐sensitized nanocrystalline‐TiO₂ solar cells (DSSCs). We attained a maximum solar‐energy‐to‐electricity conversion efficiency (η) of 6.8 % under AM 1.5 irradiation (100 mW cm^–2) with a DSSC based on 2‐cyano‐7,7‐bis(4‐dimethylamino‐phenyl)hepta‐2,4,6‐trienoic acid (NKX‐2569): short‐circuit photocurrent density (J_sc) = 12.9 mA cm^–2, open‐circuit voltage (V_oc) = 0.71 V, and fill factor (ff) = 0.74. The high performance of the solar cells indicated that highly efficient electron injection from the excited dyes to the conduction band of TiO₂ occurred. The experimental and calculated Fourier‐transform infrared (FT‐IR) absorption spectra clearly showed that these dyes were adsorbed on the TiO₂ surface with the carboxylate coordination form. A molecular‐orbital calculation indicated that the electron distribution moved from the DMA moiety to the CAA moiety by photoexcitation of the dye.     

Extraction of a plasma time-activity curve from dynamic brain PET images based on independent component analysis

A compartment model has been used for kinetic analysis of dynamic positron emission tomography (PET) data [e.g., 2-deoxy-2-18F-fluoro-D-glucose (FDG)]. The input function of the model [the plasma time-activity curve (pTAC)] was obtained by serial arterial blood sampling. It is of clinical interest to develop a method for PET studies that estimates the pTAC without needing serial arterial blood sampling. For this purpose, we propose a new method to extract the pTAC from the dynamic brain PET images using a modified independent component analysis [extraction of the pTAC using independent component analysis (EPICA). Source codes of EPICA are freely available at http://www5f.biglobe.ne.jp/?kimura/Software/top.html]. EPICA performs the appropriate preprocessing and independent component analysis (ICA) using an objective function that takes the various properties of the pTAC into account. After validation of EPICA by computer simulation, EPICA was applied to human brain FDG-PET studies. The results imply that the EPICA-estimated pTAC was similar to the actual measured pTAC, and that the estimated blood volume image was highly correlated with the blood volume image measured using 15O-CO inhalation. These results demonstrated that EPICA is useful for extracting the pTAC from dynamic PET images without the necessity of serial arterial blood sampling.