Boron removal by titanium addition in solidification refining of silicon with Si-Al melt

In order to effectively remove B from Si for its use in solar cells, a process involving B removal by solidification refining of Si using a Si-Al melt with Ti addition was investigated. For clarifying the effect of Ti addition on B removal from the Si-Al melt, TiB₂ solubilities in Si-64.6 at. pct Al melt at 1173 K and Si-60.0 at. pct Al melt at 1273 K were determined by measuring the equilibrium concentrations of B and Ti in the presence of TiB₂ precipitates. The small solubilities of TiB₂ in the Si-Al melt indicate the effective removal of B from the Si-Al melt by Ti addition. Further, solidification experiments of Si-Al alloys containing B by Ti addition were performed, and the effect of Ti addition on the solidification refining of Si with the Si-Al melt was successfully confirmed.     

Hot carrier magnetophonon spectroscopy of semiconductors in high magnetic fields up to 40 T

Hot carrier magnetophonon resonances of n-type Si, short channel InP and p-type InSb were investigated in pulsed high magnetic fields up to 40 T. Using a recently developed high resolution technique in pulsed high fields, many new features of the hot carrier-phonon interactions in high magnetic fields were found.     

Improvement of Mechanical Properties of Machinable Glass-Ceramics through Postmachining Heat Treatments

A mica-based machinable glass-ceramic has been converted to a glass-ceramic containing cordiertie and body-centered cubic chondrodite through heat treatment at temperatures higher than that used for the crystallization of mica. The machinability is lost, microhardness increases, and the thermal expansion coefficient decreases with the change of the crystalline phase from mica to cordierite and chondrodite.     

Interface and layer thickness dependence of the effective mass in InAs/GaSb superlattices studied by high field cyclotron resonance

The effective mass has been studied in a series of semiconducting and semimetallic InAs/GaSb superlattices as a function of superlattice period and band gap. The mass is found to be determined almost entirely by the superlattice period, and is relatively insensitive to both the ratio of the InAs to GaSb thickness, and the structure of the interface layer, which was grown as both a monolayer of InSb and GaAs. Using pulsed magnetic fields of up to 180 T it was possible to observe spin-split cyclotron resonance at room temperature for all samples studied. On cooling the spin-splitting was found to be temperature dependent. This is attributed to the importance of electron-electron interactions which couple the two spin transitions as observed recently in high purity GaAs/GaAlAs heterojunctions at low temperatures.     

Mechanical stress control in a VLSI-fabrication process: a method for obtaining the relation between stress levels and stress-induced failures

An ideal fabrication process is designed to minimize mechanical stress in semiconductor devices and to improve device reliability. Mechanical stress levels were predicted by in-house simulations supported by a thin-film database. These stress levels were correlated with stress-induced defects by TEM analysis supported by fail bit addressing on matured megabit SRAMs. Amorphous-doped silicon film with various annealing temperatures were used for the gate electrode to change the mechanical stress in devices and to get the direct relationship between predicted stress levels and stress related defects. The authors describe brief guidelines for suppressing dislocations in the small geometry shallow-trench isolation process utilizing this system. Polysilicon thickness in the W-polycide gate electrode is designed to minimize mechanical stress in the gate oxide and to suppress the gate oxide failure in probe and class tests. Moreover, critical stress generates dislocations during post source/drain ion implantation anneal obtained by a ball indentation method. This indicated that lower temperature anneal is effective in suppressing the dislocations. A two-step anneal was introduced to suppress dislocations and to enable higher ion activation.     

Tradeoffs in granularity and parallelization for a Monte Carlo shower simulation code

The EGS4 code, developed at Stanford Linear Accelerator Center, simulates electron-photon cascading phenomena. The original code is inherently sequential: processing one particle at a time. This paper reports on a series of experiments in parallelizing different versions of EGS4. Our parallel experiments were run on a 30-processor Sequent Balance B21 and a 6-processor Symmetry S27. We have considered the following approaches for parallel execution of this application code:

1. (1) Original sequential version modified for parallel processing: 1 processor;

2. (2) Version 1 run multiprocessed: 1 to 29 processors;

3. (3) Sequential version modified for large-grain parallel processing: 1 procssor;

4. (4) Version 3 run using the Sequent Microtasking Library: 1 to 29 processors.

For each approach, we discuss the relative advantages and disadvantages in the areas of coding effort, understandability and portability, as well as performance, and outline a new parallelization approach we are currently pursuing based on Large-Grain Data Flow techniques.     

STRUCTURE FORMATION OF COATED FILMS WITH DISPERSED PIGMENTS DURING DRYING

In the drying of coated films with dispersed pigments, such as floppy disks, the structure of the film is formed during the drying process and depends on the drying condition. It is important to understand the structure formation during drying for the design of the dryer and die better quality of the product. We measured die drying characteristics of the film and determined the structure of dried film experimentally. A qualitative model for the structure formation during drying of the coated film is suggested.     

Development of cable fault location method using fiber optic distributed temperature sensor

When ground-fault problems occur on a cable line, immediate fault location and restoration are required. Therefore, various new methods to locate the fault point instantaneously have been investigated to replace such conventional methods as the Murray loop method and the pulse radar method [1]. These methods require a long time to locate the fault point. One possible fault location method is to sense the temperature rise following a ground fault using a fiber optic distributed temperature sensor. Application of this method was found feasible through sensing the temperature rise at a ground-fault test using a thermocouple as a temperature sensor with test cables [4]. A power/optical composite cable was prepared experimentally and after verifying its thermal mechanical performance, the temperature rise at an incidence of a fault was determined and the anticipated performance was demonstrated in a ground-fault test. This article describes the outline of the test.     

Multichannel fiber ferrule for a stable laser-diode array module

We developed a multichannel fiber ferrule for a stable laser-diode array module. To apply YAG laser welding to parallel butt couple between the laser-diode and the single-mode fiber arrays, hermetically sealed and precisely aligned equi-interval fibers are required. We describe a V-grooved ceramic ferrule for embedding fibers. Fibers are fixed by soldering, using a flat ceramic lid and aligned with a 250 μm pitch. Our ferrule allowed a metallic, stem mounting laser-diode, to be fixed by YAG laser welding. All 30 samples tested have a leak rate of less than 1×10^-10 atm·cc/s. Optical coupling of fabricated modules was 9.7±0.2 dB and coupling loss change from 25°C to 115°C was within 0.5 dB