Design of high-power, high-efficiency 60-GHz MMICs using animproved nonlinear PHEMT model

This work describes the design and nonlinear modeling of two V-band monolithic microwave integrated circuit (MMIC) power amplifiers using a nonlinear high electron mobility transistor (HEMT) model developed specifically for very short gate length pseudomorphic HEMTs (PHEMTs). Both circuits advance the state-of-the-art of V-band power MMIC performance. The first, a single-ended design, produced 293 mW of output power with a record 26% power-added efficiency (PAE) and 9.9 dB of power gain at 62.5 GHz when measured on-wafer. The second MMIC, a balanced design with on-chip input and output Lange couplers for power combining, generated a record 564 mW of output power (27.5 dBm) with 21% PAE and 9.8 dB power gain. The MMIC's are passivated, thinned to 2 mils, and down-biased to 4.5 V for high reliability space applications. These excellent first-pass MMIC results are attributed to the use of an optimized 0.1-/μm PHEMT cell structure and a design based on millimeter-wave on-wafer device characterization, together with a new and very accurate large signal analytical FET model developed for 0.1-/μm PHEMTs     

Stochastic Screen Halftoning for Electronic Imaging Devices

For numerous digital imaging applications, there is a need to maintain the highest quality perceived image, while utilizing a printer or display that can only achieve a limited number of output states. Digital halftoning is the approach that has been widely used to meet this demand. In this focus paper, we provide a short summary of halftone techniques, then we concentrate on the newer and expanding roles of stochastic halftone screens—which are free of regular periodic structures and have numerous advantages in quality color rendering. We address some theoretical issues, design and optimality issues, printer compensation issues, and color quality issues that pertain to the development and use of stochastic screens for electronic imaging devices.     

Vibrational Energy Transport in Hybrid Ordered/Disordered Nanocomposites: Hybridization and Avoided Crossings of Localized and Delocalized Modes

Vibrational energy transport in disordered media is of fundamental importance to several fields spanning from sustainable energy to biomedicine to thermal management. This work investigates hybrid ordered/disordered nanocomposites that consist of crystalline membranes decorated by regularly patterned disordered regions formed by ion beam irradiation. The presence of the disordered regions results in reduced thermal conductivity, rendering these systems of interest for use as nanostructured thermoelectrics and thermal device components, yet their vibrational properties are not well understood. Here, the mechanism of vibrational transport and the reason underlying the observed reduction is established in detail. The hybrid systems are found to exhibit glass‐crystal duality in vibrational transport. Lattice dynamics reveals substantial hybridization between the localized and delocalized modes, which induces avoided crossings and harmonic broadening in the dispersion. Allen/Feldman theory shows that the hybridization and avoided crossings are the dominant drivers of the reduction. Anharmonic scattering is also enhanced in the patterned nanocomposites, further contributing to the reduction. The systems exhibit features reminiscent of both nanophononic materials and locally resonant nanophononic metamaterials, but operate in a manner distinct to both. These findings indicate that such “patterned disorder” can be a promising strategy to tailor vibrational transport through hybrid nanostructures.     

Phase transformations in thermally exposed Au-Al ball bonds

Gold-aluminum ball bonds were thermally exposed at constant elevated temperatures, and the resultant phase transformations studied in detail. The as-bonded microstructure of a Au-Al ball bond essentially consisted of a reaction zone (termed “alloyed zone” (AZ) in the as-bonded condition) between the Au bump and the bonded Al metallization. It is the growth of the reaction zone between the Au bump and the bonded Al metallization and also the nonbonded Al metallization during thermal exposure that gave rise to the various phase transformations. Au₄Al, Au₈Al₃, and Au₂Al are the predominant phases that grew across the ball bond until the bonded Al metallization is available to take part in the interdiffusion reactions. After the complete consumption of the bonded Al metallization, the Au-Al phases reverse transformed resulting in the formation of the Au₄Al phase in the entire reaction zone across the ball bond (RZ-A). The lateral interdiffusion reactions resulted in the nucleation and the growth of all of the Au-Al phases given by the phase diagram. Kidson’s analysis and Tu et al.’s treatment were extended to a five-phase binary system to explain the phase transformations in thermally exposed Au-Al ball bonds. It is possible for all of the Au-Al phases to grow across a ball bond uninhibited as long as the bonded metallization is available. However, the supply limitation of the bonded metallization gives rise to reverse transformations where Al-rich phases transform to Au-rich phases and eventually result in the formation of the Au₄Al phase in the entire RZ-A. If infinite time is allowed, Au₄Al would dissolve; the extent of which is dependent on the solubility of Al in Au. No supply of Au lateral to the bond causes the reverse transformation of the Au₄Al phase, giving rise to the lateral growth of the remaining Au-Al phases. If infinite time is allowed, the lateral phase transformations would result in the formation of a phase that is dependant on the relative proportion of Au and Al present in the nonbonded metallization (NBM) and Au₄Al below the void line. Hence, the presence of a phase in a particular location of a ball bond is dependent on the time and temperature of thermal exposure.     

No Shades of Gray: The Binary Discourse of George W. Bush and an Echoing Press

Binary communications represent the world as a place of polar opposites. Such conceptions of reality, although not uncommon in Western thought, take on a heightened importance when political leaders employ them in a concerted, strategic discourse in a mass media environment. With this in mind, this research offers a conception of binary discourse and uses this as a foundation to examine (a) the use of binaries by U.S. President George W. Bush in 15 national addresses, from his inauguration in January 2001 to commencement of the Iraq War in March 2003, and (b) the responses of editorials in 20 leading U.S. newspapers to the president's communications.     

Efficient parasitic substrate modeling for monolithic mixed-A/D circuit design and verification

Parasitic analog-digital noise coupling has been identified as a key issue facing designers of mixed-signal integrated circuits. In particular, signal crosstalk through the common chip substrate has become increasingly problematic. This paper demonstrates a methodology for developing simulation, synthesis, and verification models to analyze the global electrical behavior of the non-ideal semiconductor substrate. First, a triangular discretization method is employed to generate RC equivalent-circuit substrate models which are far less complex than those formulated by conventional techniques. The networks are then accurately approximated for subsequent analysis by an efficient reduction algorithm which uses a well-conditioned Lanczos moment-matching process. Through congruence transformations, the network admittance matrices are transformed to reduced equivalents which are easily post-processed to derive passive, SPICE-compatible netlist representations of the reduced models. The pure-RC properties of the extracted substrate networks are fully exploited to formulate an efficient overall algorithm. For validation, the strategy has been successfully applied to several mixed-signal circuit examples.     

Silicon‐Modified Rare‐Earth Transitions—A New Route to Near‐ and Mid‐IR Photonics

Silicon underpins microelectronics but lacks the photonic capability needed for next‐generation systems and currently relies on a highly undesirable hybridization of separate discrete devices using direct band gap semiconductors. Rare‐earth (RE) implantation is a promising approach to bestow photonic capability to silicon but is limited to internal RE transition wavelengths. Reported here is the first observation of direct optical transitions from the silicon band edge to internal f‐levels of implanted REs (Ce, Eu, and Yb); this overturns previously held assumptions about the alignment of RE levels to the silicon band gap. The photoluminescence lines are massively redshifted to several technologically useful wavelengths and modeling of their splitting indicates that they must originate from the REs. Eu‐implanted silicon devices display a greatly enhanced electroluminescence efficiency of 8%. Also observed is the first crystal field splitting in Ce luminescence. Mid‐IR silicon photodetectors with specific detectivities comparable to existing state‐of‐the‐art mid‐IR detectors are demonstrated.     

Connectivity properties of large-scale sensor networks

In wireless sensor networks, both nodes and links are prone to failures. In this paper we study connectivity properties of large-scale wireless sensor networks and discuss their implicit effect on routing algorithms and network reliability. We assume a network model of n sensors which are distributed randomly over a field based on a given distribution function. The sensors may be unreliable with a probability distribution, which possibly depends on n and the location of sensors. Two active sensor nodes are connected with probability p _e (n) if they are within communication range of each other. We prove a general result relating unreliable sensor networks to reliable networks. We investigate different graph theoretic properties of sensor networks such as k-connectivity and the existence of the giant component. While connectivity (i.e. k = 1) insures that all nodes can communicate with each other, k-connectivity for k > 1 is required for multi-path routing. We analyze the average shortest path of the k paths from a node in the sensing field back to a base station. It is found that the lengths of these multiple paths in a k-connected network are all close to the shortest path. These results are shown through graph theoretical derivations and are also verified through simulations.     

Measurement of Onset of Structural Relaxation in Melt-Quenched Phase Change Materials

Chalcogenide phase change materials enable non-volatile, low-latency storage-class memory. They are also being explored for new forms of computing such as neuromorphic and in-memory computing. A key challenge, however, is the temporal drift in the electrical resistance of the amorphous states that encode data. Drift, caused by the spontaneous structural relaxation of the newly recreated melt-quenched amorphous phase, has consistently been observed to have a logarithmic dependence in time. Here, it is shown that this observation is valid only in a certain observable timescale. Using threshold-switching voltage as the measured variable, based on temperature-dependent and short timescale electrical characterization, the onset of drift is experimentally measured. This additional feature of the structural relaxation dynamics serves as a new benchmark to appraise the different classical models to explain drift.     

A Dual-Fed, Self-Diplexing PIFA and RF Front-End

A dual-fed, self-diplexing planar inverted F antenna and an associated RF front-end are described. It is shown that co-design of the antenna and front-end can be used to double the operational bandwidth, without significant size or performance penalties. Indeed, the use of two feeds allows the antenna to be self-diplexing, which results in improved overall efficiency