A Composite Formation Route to Well‐Crystalline Manganese Oxide Nanocrystals: High Catalytic Activity of Manganate–Alumina Nanocomposites

Manganese oxide nanocrystals are combined with aluminum oxide nanocrystals to improve their crystallinity via calcination without a significant increase of crystal size. A nanocomposite, consisting of two metal oxides, can be synthesized by the reaction between permanganate anions and aluminum oxyhydroxide keggin cations. The as‐prepared manganese oxide–aluminum oxide nanocomposite is X‐ray amorphous whereas heat‐treatment gives rise to the crystallization of an α‐MnO₂ phase at 600 °C and Mn₃O₄/Mn₂O₃ and γ‐Al₂O₃ phases at 800 °C. Electron microscopy and N₂ adsorption‐desorption‐isotherm analysis clearly demonstrate that the as‐prepared nanocomposite is composed of a porous assembly of monodisperse primary particles with a size of ～20 nm and a surface area of >410 m² g^?1. Of particular interest is that the small particle size of the as‐prepared nanocomposite is well‐maintained up to 600 °C, a result of the prevention of the growth of manganate grains through nanoscale mixing with alumina grains. The calcined nanocomposite shows very‐high catalytic activity for the oxidation of cyclohexene with an extremely high conversion efficiency of >95% within 15 min. The present results show that the improvement of the crystallinity without significant crystal growth is very crucial for optimizing the catalytic activity of manganese oxide nanocrystals.     

Neutron diffraction measurements of residual stresses in a 50 mm thick weld

Residual stresses were determined through the thickness of a 50 mm thick ferrite steel weld plate using neutron diffraction. Whereas the limiting penetration depth for iron-based alloys is about 25 mm in the most typical neutron diffractometers, we significantly enhanced the penetration depth up to 50 mm with 2 mm spatial resolution by using the neutron wavelength of 2.39 Å. The selected wavelength minimizes the total neutron cross-section and beam attenuation, thereby, maximizes the neutron fluxes at depth. Two-dimensional mapping of the residual stresses shows that significant amounts of the tensile longitudinal stresses (over 90% of yield strength) were developed along the heat-affected zone of the weld.     

Equilibrium States of Liquid, Solid, and Vapor and the Configurations for Copper, Tungsten, and Pores in Liquid-Phase Sintering

The equilibrium state of the liquid–solid structure during liquid-phase sintering (LPS) is pondered with respect to minimum energy geometries. Besides the solid–liquid ratio, several interfacial energies determine the most stable geometric configuration. In this study, we rely on the attributes of the copper or nickel as the liquid, tungsten as the solid, and vapor to solve for terminal configurations that include liquid pools inside the solid grains. Surface evolution is enabled using a stepwise computer program[1] to rearrange and reshape small grain clusters reflective of LPS based on a preset combination of wetting and dihedral angles. The findings show how different interfacial energies, as a result of oxidation or impurity segregation, play a role in determining the final geometry. The specific concern is identification of situations in which a liquid is stable inside the solid, as observed in some LPS materials.     

A Surface Tailoring Method of Ultrathin Polymer Gate Dielectrics for Organic Transistors: Improved Device Performance and the Thermal Stability Thereof

Tailoring the surface of the dielectric layer is of critical importance to form a good interface with the following channel layer for organic thin film transistors (OTFTs). Here, a simple surface treatment method is applied onto an ultrathin (<15 nm) organosilicon‐based dielectric layer via the initiated chemical vapor deposition (iCVD) to make it compatible with organic semiconductors without degrading its insulating property. A molecular‐thin oxide capping layer is formed on a 15 nm thick poly(1,3,5‐trimetyl‐1,3,5‐trivinyl cyclotrisiloxane) (pV3D3) by a brief oxygen plasma treatment. The capping layer greatly enhances the thermal stability of the dielectrics, without degrading the original mechanical flexibility and insulating performance of the dielectrics. Moreover, the surface silanol functionalities formed by the plasma treatment can also be utilized for the surface modification with silane compounds. The surface‐modified dielectrics are applied to fabricate low‐voltage operating (<5 V) pentacene‐based OTFTs. The highest field‐effect mobility of the device with the surface‐treated 15 nm thick pV3D3 is 0.59 cm² V^?1 s^?1, which is improved up to two times compared to the TFT with the pristine pV3D3. It is believed that the simple surface treatment method can widely extend the applicability of the highly robust, ultrathin, and flexible pV3D3 gate dielectrics to design the surface of the dielectrics to match well various kinds of organic semiconductors.