首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   2919篇
  免费   64篇
  国内免费   18篇
电工技术   164篇
综合类   2篇
化学工业   748篇
金属工艺   82篇
机械仪表   85篇
建筑科学   58篇
矿业工程   1篇
能源动力   138篇
轻工业   182篇
水利工程   9篇
石油天然气   6篇
无线电   277篇
一般工业技术   530篇
冶金工业   416篇
原子能技术   70篇
自动化技术   233篇
  2023年   14篇
  2022年   38篇
  2021年   60篇
  2020年   30篇
  2019年   35篇
  2018年   47篇
  2017年   36篇
  2016年   49篇
  2015年   21篇
  2014年   50篇
  2013年   128篇
  2012年   91篇
  2011年   162篇
  2010年   107篇
  2009年   119篇
  2008年   133篇
  2007年   98篇
  2006年   97篇
  2005年   111篇
  2004年   79篇
  2003年   71篇
  2002年   67篇
  2001年   59篇
  2000年   57篇
  1999年   65篇
  1998年   183篇
  1997年   129篇
  1996年   84篇
  1995年   60篇
  1994年   59篇
  1993年   59篇
  1992年   48篇
  1991年   56篇
  1990年   37篇
  1989年   37篇
  1988年   45篇
  1987年   28篇
  1986年   48篇
  1985年   43篇
  1984年   24篇
  1983年   30篇
  1982年   22篇
  1981年   22篇
  1980年   28篇
  1979年   27篇
  1978年   23篇
  1977年   22篇
  1976年   20篇
  1974年   8篇
  1971年   8篇
排序方式: 共有3001条查询结果,搜索用时 31 毫秒
21.
Far-infrared reflection spectra of dielectric ceramics, BaSm2Ti5O14, BaTi4O9, and some pcrovskites such as Ba(Zn1/3Nb2/3)O3, have been measured at room temperature using a Fourier transform infrared spectrometer in order to investigate the effect of the crystal structure on the dielectric properties. As for perovskites, Sr(Zn1/3Nb2/3)O3 and Sr(Mg1/3Nb2/3)O3, in which B site ions are ordered, were also measured. Reflectance data were analyzed by means of a factorized form of dielectric functions instead of the classical dispersion theory, and all of the spectra were well fitted. The values of dielectric constants and tan δ calculated from the reflectance data were in good agreement with resonant cavity measurements at 5 GHz. Furthermore, results of this study have shown that the main contribution to the microwave dielectric properties is caused by low-frequency optically active modes located at 50 to about 300 cm−1, and for perovskite structures it is suggested that the ordering of B site ions is significant in obtaining low dielectric losses.  相似文献   
22.
A ten-user truly asynchronous gigabit coherent-optical-code-division-multiple-access (OCDMA) transmission was experimentally demonstrated without using any timing coordination. The enabling technologies are a record-length 511-chip superstructured-fiber-Bragg-grating (SSFBG) en/decoder and a supercontinuum (SC)-based optical-thresholding technique to significantly suppress the signal interference beat noise as well as the multiple-access-interference (MAI) noise.  相似文献   
23.
It is considered that refractory dissolved organic substances have caused an increase in the COD concentration in Lake Biwa in recent years. We investigated the organic matter in the first flush of stormwater runoff from a road in the watershed area of the lake, and studied the possibility of improvement in the water environment from that aspect. After percolating the stormwater through soil, we analyzed organic substances fractionated by using GPC-TC. And we examined the effect of removal of organic substances by comparing the peak height before and after percolation. In the result of the experiments, we found that soil infiltration reduced the refractory dissolved organic substance and we successfully designed a system for a simple and easy experimental facility to treat urban runoff.  相似文献   
24.
The electrode characteristics of perovskite-type oxides, La0.6Sr0.4CoO3 and La0.6Sr0.4MnO3, on ceria-based oxide and stabilized zirconia were analysed by the a.c. impedance method. The ionic conductivities of the electrolyte and electrode conductivities from the a.c. impedance analysis agreed with those obtained from the current interruption and d.c. four-probe methods. Two semicircles from the charge transfer and diffusion processes appeared as the electrode resistance. The relative contribution of these two processes to the overall electrode resistance strongly depended on the microstructure of the electrode. The electrode microstructure could be controlled by the dispersion medium used for the electrode slurry. The La0.6Sr0.4MnO3 electrode coated with n-butyl acetate slurry exhibited the smallest electrode resistance.  相似文献   
25.
26.
1.3-/spl mu/m InGaAsP-InP lasers have been successfully fabricated on Si substrates by wafer bonding with heat treatment at 400/spl deg/C. A pressure of 4 kg/cm/sup 2/ has been applied on the wafers before the heat treatment and this pressure application has enabled us to achieve bonding strength required for the device fabrication even when the bonding temperature is as low as 400/spl deg/C. Room-temperature continuous-wave operation with threshold current of 49 mA has been achieved for 7-/spl mu/m-wide mesa lasers.  相似文献   
27.
Air trench structures for reduced-size bends in low-index contrast waveguides are proposed. To minimize junction loss, the structures are designed to provide adiabatic mode shaping between low- and high-index contrast regions, which is achieved by the introduction of "cladding tapers." Drastic reduction in effective bend radius is predicted. We present two-dimensional (2-D) finite-difference time-domain/effective index method simulations of bends in representative silica index contrasts. We also argue that substrate loss, while present, can be controlled with such air trenches and reduced to arbitrarily low levels limited only by fabrication capabilities. The required trench depth, given an acceptable substrate loss, is calculated in three dimensions using an approximate equivalent current sheet method and also by a numerical solver for full-vector leaky modes. A simple, compact waveguide T-splitter using air trench bends is presented.  相似文献   
28.
29.
Summary Polymerization of methyl methacrylate (MMA) withtert-butyllithium (t-C4H9Li) in toluene in the presence of aluminum alkoxides such as ethoxide,tert-butoxide and 2,6-di-tert-butylphenoxide, were examined at various Al/Li ratios. In the cases of ethoxide andtert-butoxide, predominantly isotactic polymers with broad molecular weight distribution were obtained. Combinations oft-C4H9Li and bis(2,6-ditert-butylphenoxy)methylaluminum [MeAl(ODBP)2] were found to be an efficient initiating system for heterotactic polymerization of MMA, which gives PMMA rich in heterotactic triads up to 68% with narrow molecular weight distribution (Mw/Mn=1.09–1.17). End group analysis by1H NMR indicated thatt-C4H9Li initiates the polymerization and MeAl(ODBP)2 works as a stereospecific modifier. From stereosequence analysis of the heterotactic PMMA by13C NMR, it was found that the calculated pentad fractions from the first-order Markovian statistics (Pm/r=0.742, Pr/m=0.627) fitted the observed ones better than those from Bernoullian statistics. The glass transition temperature of the heterotactic PMMA was 13°C lower than that of syndiotactic PMMA, and the intrinsic viscosity in tetrahydrofuran was close to that of isotactic PMMA with a similar molecular weight but higher than that of syndiotactic PMMA.  相似文献   
30.
CdTe epilayers were grown directly on (100), (211), and (111) silicon substrates by metalorganic chemical vapor deposition (MOCVD). The crystallinity and the growth orientation of the CdTe film were dependent on the surface treatment of the Si substrate. The surface treatment consisted of exposure of the Si surface to diethyltelluride (DETe) at temperatures over 600°C prior to CdTe growth. Direct growth of CdTe on (100) Si produced polycrystalline films whereas (lll)B single crystals grew when Si was exposed to DETe prior to CdTe growth. On (211) Si, single crystal films with (133)A orientation was obtained when grown directly; but produced films with (211)A orientation when the Si surface was exposed to DETe. On the other hand, only (lll)A CdTe films were possible on (111) Si, both with and without Te source exposure, although twinning was increased after exposure. The results indicate that the exposure to a Te-source changes the initial growth stage significantly, except for the growth on (111) Si. We propose a model in which a Te atom replaces a Si atom that is bound to two Si atoms.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号