Direct measurement of individual deep traps in single silicon nanowires

The potential of the metal nanocatalyst to contaminate vapor-liquid-solid (VLS) grown semiconductor nanowires has been a long-standing concern, since the most common catalyst material, Au, is known to induce deep gap states in several semiconductors. Here we use Kelvin probe force microscopy to image individual deep acceptor type trapping centers in single undoped Si nanowires grown with an Au catalyst. The switching between occupied and empty trap states is reversibly controlled by the back-gate potential in a nanowire transistor. The trap energy level, i.e., E(C) - E(T) = 0.65 ± 0.1 eV was extracted and the concentration was estimated to be ～2 × 10(16) cm(-3). The energy and concentration are consistent with traps resulting from the unintentional incorporation of Au atoms during the VLS growth.     

Obtaining uniform dopant distributions in VLS-grown Si nanowires

Semiconducting nanowires grown by the vapor-liquid-solid method commonly develop nonuniform doping profiles both along the growth axis and radially due to unintentional surface doping and diffusion of the dopants from the nanowire surface to core during synthesis. We demonstrate two approaches to mitigate nonuniform doping in phosphorus-doped Si nanowires grown by the vapor-liquid-solid process. First, the growth conditions can be modified to suppress active surface doping. Second, thermal annealing following growth can be used to produce more uniform doping profiles. Kelvin probe force microscopy and scanning photocurrent microscopy were used to measure the radial and the longitudinal active dopant distribution, respectively. Doping concentration variations were reduced by 2 orders of magnitude in both annealed nanowires and those for which surface doping was suppressed.     

Adjustable photoluminescence of peptide nanotubes coatings

Peptide nanotubes (PNTs) have become a significant subject at the biological and bionanotechnology field. Here we describe the spectroscopic analysis of PNTs coatings, which were deposited by a physical vapor deposition technology. We show that we can adjust the electronic, and consequently the spectroscopic, photoluminescence (PL) properties of the PNT coatings, simply by changing the parameters of the PNT deposition. We show that by controlling the PNT deposition parameters we can observe different PL properties of the PNT coatings and significantly strengthen the PL in the visible blue region. We further explain that the strong blue emission is resulting from the conversion of the monomers to a different chemical structure. The strong blue emission, and our ability to adjust it, promotes the use of the PNTs as organic materials for light emitting devices.