A comparative study on the effect of VUV radiation in plasma SiOx-coated polyimide and polypropylene films

Wettability of polyimide (PI) and polypropylene (PP) films have been improved using SiO_x-like thin layers deposited from a mixture of hexamethyldisiloxane (HMDSO) and oxygen in a microwave distributed electron cyclotron resonance plasma reactor. The films wettability evolution behaviors were evaluated through the results of contact angle measurements, atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). The plasma depositions of SiO_x thin layers in presence of VUV radiation induce a contact angle decrease to about 7° and 35° for PI and PP films, respectively. XPS data showed that such difference in wettability is attributed to the increase of hydrophilic group's proportion at the surface of coated PI films due to VUV irradiation. AFM images showed that the PI surface topography remains relatively smooth when coated in presence of VUV radiation. However, in the case of PP films, AFM images revealed the growth of irregular structure due to a substrate etching effect supported by VUV radiation. For polymers coated without VUV irradiation, the deconvolution of the C1s peaks showed a significant decrease of CO bonds for both PI and PP substrates.     

La doping effects on intergrowth Bi2WO6–Bi3TiNbO9 ferroelectrics

La doping effects on intergrowth Bi₂WO₆–Bi₃TiNbO₉ ferroelectric ceramics were studied by X-ray diffraction, electron probe microanalysis and dielectric spectroscopy. It was found that the La³⁺ distribution, ferroelectric phase transition and dielectric relaxation behavior are apparently affected by La doping. With increasing La³⁺ content, the site of dopant ion varies, the grain growth of Bi₅TiNbWO₁₅ is restrained, the Curie temperature is reduced and broadened. Furthermore, two dielectric relaxation loss peaks were observed both in temperature and frequency spectra. The calculated relaxation parameters revealed the oxygen vacancy related to the relaxation process.     

Mechanism of resistance microwelding of crossed fine nickel wires

Resistance microwelding of fine crossed nickel wires is of increasing industrial importance for electrical connections in downsized electronic and medical devices, but the understanding of the process is very limited. A study has, therefore, been performed to clarify the basic joining mechanisms, in which the effects of main process parameters (welding current and force and weld time) were investigated by detailed mechanical testing and metallurgical examinations. A bonding mechanism with main process stages (wire cold collapse, surface melting, molten-phase squeeze-out and, solid-state bonding) was proposed. A new technique has also been developed to optimize the process by initiating the welding current well before the electrode force has reached its full nominal value.     

Single-Threaded vs. Multithreaded: Where Should We Focus?

Today, with the increasing popularity of multicore processors, one approach to optimizing the processor's performance is to reduce the execution times of individual applications running on each core by designing and implementing more powerful cores. Another approach, which is the polar opposite of the first, optimizes the processor's performance by running a larger number of applications on a correspondingly larger number of cores, albeit simpler ones. The difference between these two approaches is that the former focuses on reducing the latency of individual applications or threads (it optimizes the processor's single-threaded performance), whereas the latter focuses on reducing the latency of the applications' threads taken as a group (it optimizes the processor's multithreaded performance). The panel, from the 2007 Workshop on Computer Architecture Research Directions, discusses the relevant issues.     

A mechanistic analysis of the correlation between overall strength and indentation hardness in discontinuously reinforced aluminum

It is well established that the indentation hardness of metallic alloys shows a reasonable correlation with their yield strength or ultimate strength. Experiments illustrate that such a unique correlation is nonexistent for discontinuously reinforced metal matrix composites, even when the indentation size is much greater than the reinforcement size. For aluminum alloys reinforced with silicon carbide particles, the same composite yield strength and tensile strength with different reinforcement fractions do not lead to similar hardness, or vice versa. Finite element analyses are carried out to rationalize the experimental findings. The modeling utilizes a two-dimensional plane-strain formulation. Discrete particles are included in the material model, and the overall stress-strain response and the indentation response are numerically simulated. The results confirm the lack of unique correspondence between the composite hardness and strength. The alteration of local heterogeneity in the composite is found to affect the indentation response. Effects of the geometrical arrangement of particles and thermal residual stresses on the indentation response are also investigated numerically.     

Evaluation of hydrological processes in a mountainous small basin using a quinone biomarker.

An applicability of quinone biomarker to the analysis of hillslope runoff was investigated. At first, quinone profiles of three streams as well as a hillslope runoff in a forested headwater catchment were compared. The quinone composition of hillslope runoff differed from others. Moreover, there were remarkable differences in quinone profile of hillslope runoff under different rainfall conditions. Then, the behavior of quinone biomarker during the increase and decrease of hillslope runoff after a rainfall event was examined. The fractional changes in Q-9 (H2), Q-10 (H2), Q-11, MK-6 and MK-10 suggested the effect of interflow.     

Photoreactivation of Escherichia coli following medium-pressure ultraviolet disinfection and its control using chloramination.

Ultraviolet (UV) disinfection is becoming increasingly popular as an alternative disinfection technology to chlorination in recent years. In this study, we investigated the photoreactivation of Escherichia coli following medium-pressure (MP) UV disinfection of synthetic water by a bench-scale collimated beam apparatus. The UV doses ranged from 1.6 -19.7 mWs/cm2 and photoreactivation was investigated for 6 hours under fluorescent light. In addition, chloramination was applied after UV disinfection to investigate its ability to control photoreactivation. It was found that photoreactivation occurred for all UV doses tested and the increase in bacteria numbers ranged from 0.04 to 1.35 log10. However, the degree of photoreactivation decreased with increased UV doses. Chloramination experiments revealed that the addition of 0.5 mg/l of monochloramine resulted in suppression of photoreactivation for 1 hour only. An increased monochloramine dose of 1 mg/l was found to prevent photoreactivation for the entire duration of the experiment. The results of this study have shown that photoreactivation occurs even after MP UV disinfection, although it is of a lesser extent at higher UV doses. This study has also established that secondary chloramination can effectively suppress and eliminate photoreactivation with a chloramine dose of 1 mg/l.     

Programmable group-delay module using binary polarization switching

We demonstrate the first programmable group-delay module based on polarization switching. With a unique binary tuning mechanism, the device can generate any differential group delay value from -45 to +45 ps with a resolution of 1.40 ps, or any true-time-delay value from 0 to 45 ps with a resolution of 0.7 ps. The delay varying speeds for both applications are under 1 ms and can be as fast as 0.1 ms. We evaluate both the dynamic and static performances of the device while paying special attention to its dynamic figures of merit for polarization-mode dispersion emulation and compensation applications. Our experiment shows that the device exhibits a negligible transient-effect induced power penalty (<0.2 dB) in a 10-Gb/s nonreturn-to-zero system.     

Origin of the threshold voltage instability in SiO/sub 2//HfO/sub 2/ dual layer gate dielectrics

The magnitude of the V/sub T/ instability in conventional MOSFETs and MOS capacitors with SiO/sub 2//HfO/sub 2/ dual-layer gate dielectrics is shown to depend strongly on the details of the measurement sequence used. By applying time-resolved measurements (capacitance-time traces and charge-pumping measurements), it is demonstrated that this behavior is caused by the fast charging and discharging of preexisting defects near the SiO/sub 2//HfO/sub 2/ interface and in the bulk of the HfO/sub 2/ layer. Based on these results, a simple defect model is proposed that can explain the complex behavior of the V/sub T/ instability in terms of structural defects as follows. 1) A defect band in the HfO/sub 2/ layer is located in energy above the Si conduction band edge. 2) The defect band shifts rapidly in energy with respect to the Fermi level in the Si substrate as the gate bias is varied. 3) The rapid energy shifts allows for efficient charging and discharging of the defects near the SiO/sub 2//HfO/sub 2/ interface by tunneling.