Asymmetrical current conduction across a 50 A Thick aluminium gallium nitride polarisation barrier

Rectification by a 50 Aring (5 nm) thick aluminium gallium nitride (AlGaN) polarisation barrier with maximum voltage swing of 27 V is demonstrated. In order to achieve a large voltage swing, the device is constructed with a 3000 Aring (300 nm) thick undoped gallium nitride (GaN) space charge layer adjacent to the barrier to enable a large voltage drop before the advent of impact ionisation breakdown. The spontaneous and piezoelectric polarisation discontinuities at the AlGaN/GaN interfaces determine the band profiles and the thermally assisted tunneling flux of electrons through the barrier. The 3.24 MV cm ^-1 electric field across the 50 Aring thick barrier at low bias enables efficient tunneling of electrons, despite the large effective electron mass of 0.19. The effective barrier seen by electrons changes from triangular to trapezoidal for one direction of bias and enhances the asymmetry effect. The demonstrated device characteristics show that wide band-gap polarisation barriers can potentially be used as the basic components of high-power microwave limiters     

Efficient OVSF code assignment and reassignment strategies in UMTS

This paper presents an integrated solution for code management, assignment, and reassignment problems in UMTS. We propose a new architecture for code management and, based upon this new architecture, a code assignment strategy, referred to as "crowded-group first strategy". Our system architecture and code assignment strategy represent significant improvements both in the time complexity and the maintenance complexity. Moreover, the code blocking probability of the crowded-group first strategy is competitive to that of the other strategies. In this paper, we also propose a new code reassignment strategy, called the "crowded-branch first strategy". The main objective of this reassignment strategy is to reduce reassigned call probability with low computation overhead and extend this strategy for the general case. In order to systematically analyze the performances of the code assignment strategy, we implement a simulator to analyze the code selection behavior and code blocking probability of each strategy. Moreover, we propose some new performance metrics, named "weighted code blocking", "reassigned call probability", and "ratio of actual code reassignments", in order to precisely measure the performance obtained by different strategies. From the simulation results, we show that our proposed strategies efficiently utilize the OVSF codes with low computation overhead.     

High-Performance Al–Sn–Zn–In–O Thin-Film Transistors: Impact of Passivation Layer on Device Stability

We fabricated high-performance thin-film transistors (TFTs) with an amorphous-Al–Sn–Zn–In–O (a-AT-ZIO) channel deposited by cosputtering using a dual Al–Zn–O and In–Sn–O target. The fabricated AT-ZIO TFTs, which feature a bottom-gate and bottom-contact configuration, exhibited a high field-effect mobility of 31.9 $ hbox{cm}^{2}/hbox{V}cdothbox{s}$, an excellent subthreshold gate swing of 0.07 V/decade, and a high $I_{{rm on}/{rm off}}$ ratio of $≫hbox{10}^{9}$, even below the process temperature of 250 $^{circ}hbox{C}$. In addition, we demonstrated that the temperature and bias-induced stability of the bottom-gate TFT structure can significantly be improved by adopting a suitable passivation layer of atomic-layer-deposition-derived $hbox{Al}_{2} hbox{O}_{3}$ thin film.      

Strained CMOS Devices With Shallow-Trench-Isolation Stress Buffer Layers

In this brief, shallow-trench-isolation (STI) stress buffer techniques, including sidewall stress buffer and channel surface buffer layers, are developed to reduce the impact of compressive STI stress on the mobility of advanced n-type MOS (NMOS) devices. Our investigation shows that a 7% driving current gain at an NMOS device has been achieved, whereas no degradation at a p-type MOS (PMOS) device was observed. The same junction leakage at both the NMOS and PMOS devices was maintained. A stress relaxation model with simulation is thus proposed to account for the enhanced transport characteristics.     

Numerical and experimental investigation of radiation caused by the switching noise on the partitioned DC reference planes of high speed digital PCB

Influence of the partitioning and bridging of the power/ground planes on the radiation caused by the switching noise on the dc reference planes is investigated both theoretically and experimentally. Based on the three-dimensional finite-difference time-domain modeling, the electromagnetic interference (EMI) performance of the partitioned power/ground planes is studied. Radiated emission at the 3-m distance from the tested boards is measured in a fully anechoic chamber. The measured and the numerical results agree generally well. The radiation behavior of four kinds of partitioned configuration of the power/ground planes is studied. It is found that completely isolating the noise source by the etched slits, or moats, significantly reduces the radiation level at the frequencies near resonance. However, bridges connecting two sides of the moat not only significantly degrade the ability of the EMI protection of the moat, but also excite a new low-frequency resonant mode. The effect of the geometrical parameters, such as the moat size, moat location, bridge width, and bridge position, on the radiation behavior of the printed circuit board is considered. The radiation mechanism of the EMI behavior of the partitioned dc reference planes is discussed.     

A comprehensive compact-modeling methodology for spiral inductors in silicon-based RFICs

A new comprehensive wide-band compact-modeling methodology for on-chip spiral inductors is presented. The new modeling methodology creates an equivalent-circuit model consisting of frequency-independent circuit elements. A fast automated extraction procedure is developed for determining the circuit element values from two-port S-parameter measurement data. The methodology is extremely flexible in allowing for accurate modeling of general classes of spiral inductors on high- or low-resistivity substrate and for large spirals exhibiting distributed trends. The new modeling methodology is applied to general classes of spirals with various sizes and substrate parameters. The extracted models show excellent agreement with the measured data sets over the frequency range of 0.1-10 GHz.     

Highly Reliable Charge Trap-Type Organic Non-Volatile Memory Device Using Advanced Band-Engineered Organic-Inorganic Hybrid Dielectric Stacks

With the recent interest in data storage in flexible electronics, highly reliable charge trap-type organic-based non-volatile memory (CT-ONVM) has attracted much attention. CT-ONVM should have a wide memory window, good endurance, and long-term retention characteristics, as well as mechanical flexibility. This paper proposed CT-ONVM devices consisting of band-engineered organic–inorganic hybrid films synthesized via an initiated chemical vapor deposition process. The synthesized poly(1,3,5-trimethyl-1,3,5,-trivinyl cyclotrisiloxane) and Al hybrid films are used as a tunneling dielectric layer and a blocking dielectric layer, respectively. For the charge trapping layer, different Hf, Zr, and Ti hybrids are examined, and their memory performances are systematically compared. The best combination of hybrid dielectric stacks showed a wide memory window of 6.77 V, good endurance of up to 10⁴ cycles, and charge retention of up to 71% after 10⁸ s even under the 2% strained condition. The CT-ONVM device using the hybrid dielectric stacks outperforms other organic-based charge trap memory devices and is even comparable in performance to conventional inorganic-based poly-silicon/oxide/nitride/oxide/silicon structures devices. The CT-ONVM using hybrid dielectrics can overcome the inherent low reliability and process complexity limitations of organic electronics and expedite the realization of wearable organic electronics.     

Energy‐efficient power control for uplink spectrum‐sharing heterogeneous networks

This article considers energy‐efficient power control schemes for interference management in uplink spectrum‐sharing heterogeneous networks that maximize the energy efficiency of users, protect the macro base station, and support users with QoS consideration. In the first scenario, we define the objective function as the weighted sum of the energy efficiencies and develop an efficient global optimization algorithm with global linear and local quadratic rate of convergence to solve the considered problem. To ensure fairness among individual user equipments (UEs) in terms of energy efficiency, we consider the max‐min problem, where the objective is defined as the weighted minimum of the energy efficiencies, and a fractional programming theory and the dual decomposition method are jointly used to solve the problem and investigate an iterative algorithm. As by‐products, we further discuss the global energy efficiency problem and consider near‐optimal schemes. Numerical examples are provided to demonstrate significant improvements of the proposed algorithms over existing interference management schemes.     

Intercell Interference Coordination Using Threshold-Based Region Decisions

IMT-Advanced mobile communication systems make it possible for any devices to access high-speed networks anytime and anywhere. To meet the needs of IMT-Advanced systems, cellular systems must solve the problem of intercell interference caused by frequency reuse. Intercell interference problems become severe when orthogonal frequency division multiplexing (OFDM) transmission, which is a key technology for 4G communication systems, is used in a cellular system. In this paper, a zone-based intercell interference coordination (ICIC) scheme with high flexibility and low cost is proposed, and its performance is evaluated through multicell system-level simulations carried out according to the simplified 3GPP (3rd Generation Partnership Project) Long Term Evolution (LTE) system parameters. In the proposed algorithm, each cell is divided into several regions based on threshold values. Each region reuses frequencies in different ways, and the regions have different maximum transmit (TX) powers according to the interference environment. Even though the proposed scheme can be implemented with low complexity by using only the existing user equipment (UE) measurement, simulation results have confirmed that it provides significant improvements in geometry distribution.