Web-based systems design: a study of contemporary practices and an explanatory framework based on “method-in-action”

This paper reports the findings of a detailed study of Web-based systems design (WBSD) practices in Ireland based on data collected over a 3-year period (2002–2005), the objectives of which were to (1) contribute towards a richer understanding of the current “real-world” context of WBSD by characterising the profile of a typical project (team size, timeframe, nature of requirements, etc.) and identifying the key challenges, constraints, and imperatives (i.e. “mediating factors”) faced by Web-based system designers, and (2) understand how those contextual parameters and mediating factors influence the activity of WBSD as regards the selection and enactment of whatever design practices are therefore engaged (i.e. the use of methods, procedures, etc.). Data was gathered through a survey which yielded 165 usable responses, and later through a series of semi-structured qualitative interviews. Using grounded theory, an explanatory conceptual framework is derived, based on an extension of the “method-in-action” model, the application of which to WBSD has not been previously investigated in depth. It is proposed that this framework of WBSD issues is valuable in a number of ways to educators, researchers, practitioners, and method engineers.     

Transient behavior of subthreshold characteristics of fullydepleted SOI MOSFETs

It has been found that the subthreshold currents of fully depleted silicon-on-insulator (SOI) MOSFETs show a transient behavior under certain front-gate and back-gate voltage conditions. The cause of this anomaly is explained, and applications for the phenomenon are pointed out. Particularly, a simple way to measure the silicon film thickness is suggested     

The prospects of non-volatile phase-change RAM

Phase-change read-and-write memory (PRAM) is a promising memory that can solve the problems of conventional memory—scalability, read/write speed, and reliability. We will review the opportunities and technical challenges of PRAM. The most important challenge of PRAM is the reduction of the writing current. Various approaches to reduce the writing current will be reviewed and the prospects of PRAM are discussed.     

Suppression of boron penetration in p+ polysilicon gateP-MOSFETs using low-temperature gate-oxide N2O anneal

It has been reported that high-temperature (~1100°C) N₂ O-annealed oxide can block boron penetration from poly-Si gates to the silicon substrate. However, this high-temperature step may be inappropriate for the low thermal budgets required of deep-submicron ULSI MOSFETs. Low-temperature (900~950°C) N₂O-annealed gate oxide is also a good barrier to boron penetration. For the first time, the change in channel doping profile due to compensation of arsenic and boron ionized impurities was resolved using MOS C-V measurement techniques. It was found that the higher the nitrogen concentration incorporated at Si/SiO₂ interface, the more effective is the suppression of boron penetration. The experimental results also suggest that, for 60~110 Å gate oxides, a certain amount of nitrogen (~2.2%) incorporated near the Si/SiO₂ interface is essential to effectively prevent boron diffusing into the underlying silicon substrate