Significance of Nanomaterials in Wearables: A Review on Wearable Actuators and Sensors

Together with the evolution of digital health care, the wearable electronics field has evolved rapidly during the past few years and is expected to be expanded even further within the first few years of the next decade. As the next stage of wearables is predicted to move toward integrated wearables, nanomaterials and nanocomposites are in the spotlight of the search for novel concepts for integration. In addition, the conversion of current devices and attachment‐based wearables into integrated technology may involve a significant size reduction while retaining their functional capabilities. Nanomaterial‐based wearable sensors have already marked their presence with a significant distinction while nanomaterial‐based wearable actuators are still at their embryonic stage. This review looks into the contribution of nanomaterials and nanocomposites to wearable technology with a focus on wearable sensors and actuators.     

Life prediction of stainless steels by cyclic and stable hysteresis curves

Abstract

This study develops an analytical expression to describe the cyclic stress‐strain curve obtained from a series of fully‐reversed fatigue tests. A set of stress‐strain relationships is proposed to simulate the tensile branch of the stable hysteresis loop. The complete shape of the stable hysteresis loop is then constructed and the associated theoretical plastic work calculated by integrating the area within the enclosed curve. The theoretical plastic work is employed to predict the fatigue lives of the investigated materials on the basis of their respective stable plastic work per cyclelife curves. In this paper, the current mathematical derivations are based upon the endochronic theory of plasticity. The accuracy of the proposed set of stress‐strain relationships is verified by conducting fully‐reversed constant strain amplitude fatigue tests on AISI 316 and AISI 304 stainless steels. The experimental and simulation results are found to be in good agreement, hence confirming the accuracy of the proposed analytical stress‐strain relationships. Again, comparing the obverted and predicted fatigue lives, a good agreement is found between the two sets of results.     

Characterization of residual stresses from cold expansion using spatial statistics

Residual stress fields from cold expansion have been widely used to extend the fatigue life of aircraft structures. However, the spatial statistical character of these residual stress fields has not been established and has not been incorporated in current analysis methods. The objective of this study was to establish a spatial statistical method to quantify the residual stress field around a cold expanded hole. A framework called the Spatial Analysis of Residual Stress (SpARS) was developed utilizing spatial correlation, response surface modelling techniques and statistical resampling methods to characterize the residual stress field. Our results showed that tolerance bounds on residual stress can be quantified using this method. We also demonstrated the SpARS method using recently published round robin case studies. The newly developed model will be useful for aircraft structural fatigue crack growth analyses to incorporate residual stress fields for extending inspection intervals for fatigue and fracture critical structures.     

Enhanced and Differential Capture of Circulating Tumor Cells from Lung Cancer Patients by Microfluidic Assays Using Aptamer Cocktail

Collecting circulating tumor cells (CTCs) shed from solid tumor through a minimally invasive approach provides an opportunity to solve a long‐standing oncology problem, the real‐time monitoring of tumor state and analysis of tumor heterogeneity. However, efficient capture and detection of CTCs with diverse phenotypes is still challenging. In this work, a microfluidic assay is developed using the rationally‐designed aptamer cocktails with synergistic effect. Enhanced and differential capture of CTCs for nonsmall cell lung cancer (NSCLC) patients is achieved. It is also demonstrated that the overall consideration of CTC counts obtained by multiple aptamer combinations can provide more comprehensive information in treatment monitoring.     

Enhanced green emission from Tb-Bi co-doped GdAlO3 nanophosphors

Bi³⁺ and Tb³⁺ ions co-doped GdAlO₃ (GAP) nanophosphors have been synthesized by means of solvothermal reaction method. The XRD pattern of GAP phosphor confirms their orthorhombic phase. The luminescence properties of these phosphors have been explored by analyzing their excitation and emission spectra along with their decay curves. The excitation spectra of GAP:Tb³⁺, Bi³⁺ phosphors consist of a broad band in the shorter wavelength region due to the 4f⁸ → 4f⁷5d¹ transition of Tb³⁺ ions overlapped with the 6s² → 6s¹6p¹ (¹S₀ → ³P₁) transition of Bi³⁺ ions and some sharp peaks in the longer wavelength region due to f → f transitions of Tb³⁺ ions. The present phosphors exhibit green color due to strong ⁵D₄ → ⁷F₅ transition of Tb³⁺ ions. The emission intensity was enhanced by co-doping with Bi³⁺ ions under 292 nm excitation, which indicate that the efficient energy transfer occurred from Bi³⁺ to Tb³⁺ ions.     

Different shape of GaAs quantum structures under various growth conditions

We report the influences of growth parameters on the characteristics of GaAs quantum rings (QRs) and quantum dots (QDs) formed on AlGaAs/GaAs by the droplet epitaxy (DE) method. After forming Ga droplets on the AlGaAs/GaAs surface, varying amounts of arsenic (As) flux were introduced to fabricate the GaAs quantum structures. By decreasing the As flux from 8 × 10^− 5 to 3 × 10^− 5 Torr, the shape of the GaAs quantum structures was changed from QDs to elongated QRs. With further decreasing As flux, the shape of the elongated QRs became symmetric. The formation characteristics of the GaAs QRs from the QDs with the amount of As flux were discussed in terms of migration behaviors of the gallium (Ga) atoms on the GaAs(001)-c(4 × 4) surface. The effects of the amount of Ga supply and the growth temperature for the deposition of Ga droplets on the formation of the GaAs quantum structures were also considered.