Polarizational Frequency-Selective Multipath Interference Devices for Millimetric- and Submillimetric-Wave Receivers

Variants are considered of palarizational frequency-selective multipath interference devices for millimetric- and submillimetric- wave receivers. Main expressions are presented that describe their characteristics. Advantages are pointed out of the devices as compared with Fabry-Perot interferometers when solving problems of received frequency-band shaping, heterodyne noise rejection, and signal- and heterodyne-radiation transfer to mixer.     

Modeling of a constant Voltage transformer

This paper presents a comprehensive nonlinear model of the controlled constant voltage transformer also known as the ferroresonant transformer. Saturation is a normal mode of operation for this device. This paper derives an equivalent electrical circuit that relates to the physical structure of a typical design. The level of detail includes winding resistances, continuously nonlinear magnetizing inductances, tapped windings, and leakage inductances. The paper describes methods to extract the winding resistances, leakage inductances, and hysteresis loops of the transformer and how to fit the latter into single-valued nonlinear functions. The paper compares computer simulation results of the model with those obtained analytically and experimentally. The results show that the derived circuit will be very useful for designers of the ferroresonant transformer, which is used in uninterruptible power supplies.     

Low Temperature Physics at the Laboratoire National des Champs Magnétiques Pulsés in Toulouse

An overview over past and present activities and future developments at the Toulouse pulsed magnetic field facility is given, both as far as technical developments of the infrastructure, as well as low temperature physics performed at the LNCMP are concerned.     

射孔枪+内置式压力计托筒+水力泵新三联作试油(测试)工艺技术在大港油田研制与应用

该工艺技术是在原三联作(TCP+MFE+JET)基础上,根据大港油田勘探试油(测试)的需要,研制开发出的又一新技术,与原三联作相比,一趟管柱不但完成求产、测压、泵排工作,而且还能进行酸化等措施,提高了资料品质,减少了作业成本。经过6井次现场应用,全部达到了设计要求,取得了工艺、资料、成本、速度的较大进步,具有较高推广应用价值。     

Sorting Second-Grade Students: Differentiating Those Retained From Those Promoted.

A cohort of 2nd-grade students provided comparisons of academic and social competence based on school retention/promotion decisions. Sample groups were (a) retained, (b) at risk for retention, (c) special education, and (d) promoted. Findings suggested most children with academic deficiencies are identified by schools early and are sorted into educational treatments differing in intensity that represent a continuum of competence. The authors provide empirical evidence counter to the assumptions that retained students have the requisite ability to catch up and have more problem behaviors than other low-achieving students. The relevance of high-stakes test scores for promotion/retention decisions and the parallels between schools' implementation of retention policy and implementation of regulations for identifying children with disabilities are included in the discussion. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

Modification of ASM3 for the determination of biomass adsorption/storage capacity in bulking sludge control.

The selector activated sludge (SAS) systems are known to prevent excessive growth of filamentous microorganisms responsible for bulking sludge, but these systems were hardly ever modelled. This study aimed to develop a model capable of predicting rapid substrate removal in the SAS systems. For this purpose, the Activated Sludge Model No. 3 (ASM3) was extended with three processes (adsorption, direct growth on the adsorbed substrate under aerobic or anoxic conditions). The modified ASM3 was tested against the results of batch experiments with the biomass originating from two full-scale SAS systems in Germany. The endogenous biomass was mixed with various readily biodegradable substrates (acetate, peptone, glucose and wastewater) and the utilisation of substrate (expresses as COD) and oxygen uptake rates (OURs) were measured during the experiments. In general, model predictions fitted to the experimental data, but a considerable number of kinetic (5) and stoichiometric (2) parameters needed to be adjusted during model calibration. The simulation results revealed that storage was generally a dominating process compared to direct growth in terms of the adsorbed substrate utilisation. The contribution of storage ranged from 65-71% (Plant A) and 69-92% (Plant B).     

Enhanced Photoelectrochemistry in CdS/Au Nanoparticle Bilayers

Three different configurations of Au‐nanoparticle/CdS‐nanoparticle arrays are organized on Au/quartz electrodes for enhanced photocurrent generation. In one configuration, Au‐nanoparticles are covalently linked to the electrode and the CdS‐nanoparticles are covalently linked to the bare Au‐nanoparticle assembly. The resulting photocurrent, φ = 7.5 %, is ca. 9‐fold higher than the photocurrent originating from a CdS‐nanoparticle layer that lacks the Au‐nanoparticles, φ = 0.8 %. The enhanced photocurrent in the Au/CdS nanoparticle array is attributed to effective charge separation of the electron–hole pair by the injection of conduction‐band electrons from the CdS‐ to the Au‐nanoparticles. Two other configurations involving electrostatically stabilized bipyridinium‐crosslinked Au/CdS or CdS/Au nanoparticle arrays were assembled on the Au/quartz crystal. The photocurrent quantum yields in the two systems are φ = 10 % and φ = 5 %, respectively. The photocurrents in control systems that include electrostatically bridged Au/CdS or CdS/Au nanoparticles by oligocationic units that lack electron‐acceptor units are substantially lower than the values observed in the analogous bipyridinium‐bridged systems. The enhanced photocurrents in the bipyridinium‐crosslinked systems is attributed to the stepwise electron transfer of conduction‐band electrons to the Au‐nanoparticles by the bipyridinium relay bridge, a process that stabilizes the electron–hole pair against recombination and leads to effective charge separation.     

Hf-doped and NH/sub 3/-nitrided high-K gate dielectric thin film with least drain current degradation and flatband voltage shift

A novel technique to form high-K dielectric of HfSiON by doping base oxide with Hf and nitridation with NH/sub 3/, sequentially, is proposed. The HfSiON gate dielectric demonstrates excellent device performances such as only 10% degradation of saturation drain current and almost 45 times of magnitude reduction in gate leakage compared with conventional SiO/sub 2/ gate at the approximately same equivalent oxide thickness. Additionally, negligible flatband voltage shift is achieved with this technique. Time-dependent dielectric breakdown tests indicate that the lifetime of HfSiON is longer than 10 years at V/sub dd/=2 V.     

Reliability investigation of 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel

The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-/spl mu/m T-gate InGaAs-InAlAs-InP HEMTs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel on 3-in wafers. Life test was performed at two temperatures (T/sub 1/ = 200 /spl deg/C and T/sub 2/ = 215 /spl deg/C), and the amplifiers were stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2 /spl times/ 10/sup 6/ h at a junction temperature of 125 /spl deg/C. MTTF was determined by 2-temperature constant current stress using /spl Delta/G/sub mp/ = -20% as the failure criteria. The difference of reliability performance between 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel and 0.1-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with In/sub 0.6/Ga/sub 0.4/As channel is also discussed. The achieved high-reliability result demonstrates a robust 0.07-/spl mu/m pseudomorphic InGaAs-InAlAs-InP HEMT MMICs production technology for G-band applications.