Parking lock integration for electric axle drives by multi-objective design optimization

Due to safety considerations, electric axle drives (e-drives) are often equipped with a parking lock system, which prevents vehicle movement while parking in redundancy with the parking brake. In order to integrate the parking lock into the e‑drive, various mounting positions inside the e‑drive are eligible, which have a direct influence on the e‑drive packaging. Furthermore, engaging the parking lock may happen at small vehicle velocities and while driving downhill, leading to high loads on the e‑drive components. These loads depend on the mounting position of the parking lock and have to be considered in the design phase to prevent failure of the system. That way, the designs of shafts, gear wheels and bearings of the gearbox are affected by the parking lock integration. A suboptimally integrated parking lock system can thus lead to undesirably high costs and reduced energy efficiency of the entire e‑drive—all alongside the packaging aspect. Consequently, finding the best suitable parking lock integration for a certain e‑drive is a complex task for the design engineers. To reduce the level of problem complexity, an established computer-based system design method for e‑drives by means of a multi-objective optimization is extended to be capable of considering the parking lock integration. The proposed method is applied to a case study and the impact of the parking lock on the optimality of an exemplary e‑drive system is shown.

     

Passive Q Switching of a Diode-Pumped 946-nm Nd:YAG Laser with 1.6-W Average Output Power

As much as 1.6-W average output power was emitted in a simple setup from a diffusion-bonded Nd:YAG rod with 70-100-ns Q-switched pulses at 946 nm and repetition frequencies between 15 and 45 kHz at 22-W incident diode-pump power. A Cr(4+):YAG crystal with a bleachable loss of approximately 2.5% and a length of 0.5 mm was used as a saturable absorber. The extraction efficiency was 47% in comparison with the continuous-wave laser output power of 3.37 W in the free-running regime.     

Tunable single frequency thulium:YAG microchip laser with external feedback

By use of the reflection of an uncoated external etalon, a diode-pumped thulium-doped YAG microchip laser was forced into a single-frequency mode. The wavelength of the single-frequency radiation was tunable over 15 nm simply by translation of the etalon relative to the laser. Output powers of 45 mW were achieved in a monolithic setup that is insensitive to vibrations. The origin of the single-frequency oscillation is the wavelength-dependent reflection of the etalon, which is coupled back into the laser resonator. This method permits the combination of inherently stable, single-frequency resonator geometries such as microchips with laser materials that have broad tuning ranges.     

Detection of Partial Denaturation in AT-Rich DNA Fragments by Ion-Pair Reversed-Phase Chromatography

Temperature-dependent denaturation of DNA restriction fragments from the pBR322 plasmid ranging in length from 46 to 910 base pairs was detected by ion-pair reversed-phase high-performance liquid chromatography using columns packed with alkylated nonporous poly(styrene/divinylbenzene) particles. The presence of acetonitrile in the mobile phase was found to decrease the melting temperatures of DNA fragments by 1.5-2 °C/% of acetonitrile in the eluent. Small fragments (<120 bp) were completely denatured between 53.6 and 63.5 °C, depending on their total GC content. Whereas retention times of completely helical DNA fragments increased gradually with increasing temperature, partial denaturation of larger DNA fragments (>150 bp) was found to reduce retention at temperatures above 53.6 °C. Therefore, micropreparative fractionation and rechromatography, together with DNA restriction analysis, were applied to identify the correct elution order of completely helical and partially denatured fragments. Inspection of the DNA sequences of partially denatured fragments revealed domains with repeating AT base pairs. Positions of partial denaturation within the pBR322 plasmid detected by chromatographic analysis were in good agreement with partial denaturation maps obtained by electron microscopy desrcibed in the literature.     

HypExp, a Mathematica package for expanding hypergeometric functions around integer-valued parameters

We present the Mathematica package HypExp which allows to expand hypergeometric functions around integer parameters to arbitrary order. At this, we apply two methods, the first one being based on an integral representation, the second one on the nested sums approach. The expansion works for both symbolic argument z and unit argument. We also implemented new classes of integrals that appear in the first method and that are, in part, yet unknown to Mathematica.

Program summary

Title of program:HypExpCatalogue identifier:ADXF_v1_0Program summary URL:http://cpc.cs.qub.ac.uk/summaries/ADXF_v1_0Program obtainable from: CPC Program Library, Queen's University of Belfast, N. IrelandLicence:noneComputers:Computers running Mathematica under Linux or WindowsOperating system:Linux, WindowsProgram language:MathematicaNo. of bytes in distributed program, including test data, etc.:739 410No. of lines in distributed program, including test data, etc.:89 747Distribution format:tar.gzOther package needed:the package HPL, included in the distributionExternal file required:noneNature of the physical problem:Expansion of hypergeometric functions around integer-valued parameters. These are needed in the context of dimensional regularization for loop and phase space integrals.Method of solution:Algebraic manipulation of nested sums and integral representation.Restrictions on complexity of the problem:Limited by the memory availableTypical running time:Strongly depending on the problem and the availability of libraries.     

Magnetic resonance studies of some antiferromagnetic Gd-monopnictides and Gd-monochalcogenides

We report the results of electron paramagnetic resonance studies of GdX (X=As, Sb, Bi, S, Se). The temperature dependence of the linewidth H and effective g-factorg _eff are discussed. Values for the Néel temperatureT _N are inferred from coincident anomalies in H andg _eff. In the cases of X=S and Se, our estimates ofT _N are significantly lower than theT _N inferred from static susceptibility measurements. A possible source of the discrepancy is discussed.Supported by the National Science Foundation Grant No. DMR-74-08033.Work performed under the auspices of the U.S. ERDA.Supported by the National Science Foundation.     

Demagnetization of Ce impurities in superconducting (La,Th)Ce alloys: Specific heat results

Detailed measurements of the specific heat jump C at the superconducting transition temperatureT _c as a function ofT _c are reported for several (La, Th)Ce systems. The measurements document the continuous demagnetization of the Ce impurity ions which proceeds with increasing Th concentration, and provide a critical test of a theory recently developed by Müller-Hartmann and Zittartz for the superconducting behavior of matrix-impurity systems which simultaneously exhibit both superconductivity and the Kondo effect.Research supported by the U.S. Air Force Office of Scientific Research, Grant No. AF-AFOSR-71-2073.Research supported by the University of Chile-University of California Cooperative Program sponsored by the Ford Foundation.     

Optische und mechanische Eigenschaften von RLVIP HfO2‐Schichten

Optical and mechanical properties of RLVIP HfO₂ films In this paper HfO₂‐films were deposited on unheated fused silica, borosilicate glass, and silicon wafer substrates by reactive low voltage ion plating (RLVIP). Optical film properties, i. e. refractive index and absorption as well as mechanical properties, particularly film stress, were investigated. Their dependence on deposition parameters, i. e. arc current and oxygen partial pressure was studied. The film refractive index was calculated from spectrophotometric measurements. The low absorption was determined by photothermal deflection spectrometry. Stress measurements were performed by bending disc method with uncoated and coated silicon wafer substrates.