住宅电气设计中应注意的细节问题

就住宅电气设计中，常常被忽略的细节问题进行阐述，提出了在住宅室内几个功能区内，如何使灯具和插座的布置更合理，以最大限度地满足居住者的需求。     

CHA无机凝胶体系的研究及应用

过去低渗油藏调剖，注入性和堵塞性很难统一，新研制的CHA无机凝胶体系是一种易注入、堵塞能力强的调剖剂，而且成胶时间在一定范围内可控。研究了配比、温度对CHA无机凝胶体系成胶时间的影响，成胶前的注入性，成胶后在高温高盐条件下的堵塞能力，得到了可应用于现场的CHA无机凝胶体系。该调剖剂在濮城油田沙三段和文卫结合部等高温、高盐低渗油藏应用后，取得了很好的效果。     

Hydriding and Dehydriding Characteristics of Mechanically Alloyed LaMg_(17) Ni Composite Material

Magnesiumandmagnesiumalloyshavebeenin vestigatedashydrogenstoragematerialsforseveralde cadesbecausefarmorehydrogenbyweightcanbestoredinthemthaninmostoftheothercurrentlyknownhydrogenstoragealloys .Moreover ,thehighnaturalabundanceofMg ,itslightmassandenviron mentalcompatibilitypotentiallymakemagnesiumoneofthemostprospectivecandidatesforfuturehydrogenstoragematerials .Unfortunately ,thepracticalappli cationofMganditsalloyshasbeenlimitedonlytocertainstoragedevicebecauseoftheirpoorhydriding dehydr…     

基于加载算法的室内无线信道OFDM接收机的性能

本文研究了无线局域网中使信号频谱得到优化的一种简单OFDM子载波加载算法。此算法基于边缘自适应（Margin Adaptive）加载准则及其在室内无线信道上的性能。     

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对于套管挤毁问题较为严重的油气水井，采用非API标准的特厚壁套管来提高其抗挤强度，是今后预防套管挤毁的重要发展方向。目前，特厚壁套管的抗挤强度计算和尺寸系列尚未形成工业标准，文章提出特厚壁套管的抗挤强度计算方法和尺寸系列，供设计者和厂家参考。API/ISO套管挤毁工作组曾对本文公式进行了测评，结果曼示具有较高的计算精度。大量计算表明，特厚壁套管的抗挤强度大大提高，约为加厚前原套管抗挤强度的1．5～4倍，甚至6倍。最后还介绍了特厚壁套管在中原油田的现场应用情况。     

期货市场促进“铜冠”牌阴极铜创国际品牌

文章介绍了期货交易所由于其特殊的机制,而对其注册上市产品的质量提高有显著的促进作用,同时介绍了“铜冠”牌阴极铜在LME注册成功,取得进入国际市场通行证中的一些情况。     

On the elemental effect of AlCoCrCuFeNi high-entropy alloy system

The AlCoCrCuFeNi high-entropy alloy system was synthesized using a well-developed arc melting and casting method. Their elemental effect on microstructures and hardness was investigated with X-ray diffraction, scanning electron microscopy and Vickers hardness testing. The alloys exhibit quite simple FCC and BCC solid solution phases. Co, Cu and Ni elements enhance the formation of the FCC phase while Al and Cr enhance that of the BCC phase in the alloy system. BCC phases form a spinodal structure during cooling. Copper tends to segregate at the interdendrite region and forms a Cu-rich FCC phase. Low copper content renders the interdendrite as a thin film and the as-cast structure like recrystallized grain structure. The formation of BCC phases significantly increases the hardness level of the alloy system. The strengthening mechanism is discussed.     

Effect of C/Ti ratio on the laser ignited self-propagating high-temperature synthesis reaction of Al-Ti-C system for fabricating TiC/Al composites

TiC/Al composite was successfully synthesized utilizing laser ignited self-propagating high-temperature synthesis (SHS) of Al-C-Ti system with the different C/Ti molar ratio. When the molar ratio of C to Ti is below 1:1 in the starting materials, in addition to fine TiC particulates, a large amount of Al₃Ti phase was found in the composites; however, when the molar ratio of C to Ti is 1:1 in the starting materials, the Al₃Ti phase was almost completely eliminated and the distribution of TiC particulates generally appeared to be more homogeneous throughout the products synthesized.     

N-Type Field-Effect Transistors Using Multiple Mg-Doped ZnO Nanorods

Nanorod field-effect transistors (FETs) that use multiple Mg-doped ZnO nanorods and a SiO₂ gate insulator were fabricated and characterized. The use of multiple nanorods provides higher on-currents without significant degradation in threshold voltage shift and subthreshold slopes. It has been observed that the on-currents of the multiple ZnO nanorod FETs increase approximately linearly with the number of nanorods, with on-currents of ~1 muA per nanorod and little change in off-current (~4times10^-12). The subthreshold slopes and on-off ratios typically improve as the number of nanorods within the device channel is increased, reflecting good uniformity of properties from nanorod to nanorod. It is expected that Mg dopants contribute to high n-type semiconductor characteristics during ZnO nanorod growth. For comparison, nonintentionally doped ZnO nanorod FETs are fabricated, and show low conductivity to compare with Mg-doped ZnO nanorods. In addition, temperature-dependent current-voltage characteristics of single ZnO nanorod FETs indicate that the activation energy of the drain current is very low (0.05-0.16 eV) at gate voltages both above and below threshold     

Formation and Characterization of 1.5-Monolayer Self-Assembled InAs/GaAs Quantum Dots Using Postgrowth Annealing

In this paper, we report that low-density InAs/GaAs quantum dots (QDs) can be formed by postgrowth annealing the samples with 1.5-monolayer (ML) InAs coverage, which is thinner than the critical layer thickness for the Stranski-Krastanov growth. The annealing procedure was performed immediately after the deposition of the InAs layer. The effects of annealing time and annealing temperature on the dot density, dot size, and optical characteristics of the QDs were investigated. The optimum annealing conditions to obtain low-density QDs are longer than 60 s and higher than 500degC . Meanwhile, no luminescence can be observed for the wetting-layer, which may suggest that the postgrowth annealing will make the wetting layer thinner and thus reduce the effects of wetting layer on carrier relaxation and recombination. On the other hand, we observe that a decrease of the PL intensity at the annealing conditions of 60 s and 515degC , which is possibly due to the increasing surface dislocations resulted from the In adatom desorption at higher annealing temperature.