Propagation of a quasi-shear horizontal acoustic wave in Z-Xlithium niobate plates [and conductivity sensor application]

It is found that an acoustic wave which is nearly polarized in the shear horizontal (SH) direction can propagate along the X axis of a Z-cut lithium niobate plate if the ratio h/λ, where h=plate thickness and λ=acoustic wavelength, is less than about 0.5. Attractive properties of this quasi-SH wave include: (1) phase velocity nearly constant for all values of h/λ; (2) ability to propagate in contact with a liquid medium; and (3) electromechanical coupling coefficient as high as 0.15. These properties make the wave attractive for use in a variety of sensor and signal processing applications. An example of sensor applications is illustrated by using the wave to measure conductivity of liquids (aqueous KCl solution). The frequency of a 12-MHz quasi-SH mode oscillator fabricated on a 0.48 wavelength thick Z-X lithium niobate plate is found to vary by more than 80 kHz for variation in KCI concentration from 0 to 0.15%     

Directly Compressible Acetaminophen Compositions Prepared by Fluidized-Bed Granulation

Polyvinylpyrrolidone (PVP) in aqueous solution was used as a binding agent in a fluidized-bed system to agglomerate acetaminophen powder into directly compressible granules. It was found that a minimal amount of 5% w/w PVP in a concentration of 7.5% w/v or less was needed to produce granules with an acceptable flow and the corresponding tablets having enough hardness without capping. There was a strong correlation between the time for 80% dissolved (T₈₀) and the logarithm of granule volume-surface mean diameter. A directly compressible acetaminophen composition to manufacture tablets having a T₈₀ value less than 30 min can be prepared simply by adding an appropriate amount of disintegrant (crospovidone, sodium starch glycolate, or pregelatinized starch) to the agglomerated granules.     

Potential difference and photovoltaic effect arising from distortion of the electron wave function in a GaAs quantum well with a thin AlGaAs barrier

This paper discusses changes in the spectrum and distortion of the electron wave function of a GaAs quantum well when a thin AlGaAs barrier is introduced into it. The potential difference generated across the quantum well by distortion of the electron wave function is calculated, along with its dependence on the position of the barrier in the quantum well. The photovoltaic response of the structure to optical intersubband excitations is also calculated, along with the role of wave function and electronic spectrum distortion as well as intersubband nonradiative transitions in generating this response. The suitability of a GaAs quantum well with a thin barrier for use as an infrared detector is considered. Fiz. Tekh. Poluprovodn. 32, 1246–1250 (October 1998)     

A new space-vector-modulated control for a unidirectionalthree-phase switch-mode rectifier

A unidirectional three-phase switch-mode rectifier that delivers sinusoidal input currents in phase with the corresponding input phase voltages is proposed and analyzed in this paper. In the proposed topology, three AC switches are placed before the bridge rectifier and, respectively, across two power lines. A simple control scheme combing space-vector modulation and hysteresis current control is presented. Sinusoidal input line currents are observed in experimental results     

Tomsk complex for neutron-transmutation doping of silicon

All-Union Scientific-Research Institute of Nuclear Physics at the S. M. Kirov Tomsk Polytechnical University. Translated from Atomnaya énergiya, Vol. 79, No. 1, pp. 38–40, July, 1995.     

An analytical grain-barrier height model and its characterizationfor intrinsic poly-Si thin-film transistor

An analytical model for the grain-barrier height of the intrinsic poly-Si thin-film transistors (TFTs) is developed, in which the grain-barrier height for the applied gate voltage smaller than the threshold voltage is obtained by solving the charge neutrality equation and the grain-barrier height for the applied gate voltage larger than the threshold voltage is obtained by using the quasi-two-dimensional (2-D) method. Good agreements between experimental and simulation results are obtained for a wide gate voltage range     

A microprocessor-based toggle-control lighting system

Analysis, design, practical consideration, and implementation of a microprocessor-based toggle-control lighting system are presented. The system is primarily configured with a power factor corrector (PFC), a square-wave voltage generator, a manually controlled toggle switch, and two relays. Toggling the toggle switch can select a different number of lamps in operation, resulting in a mutual dimming feature. A fluorescent lamp lighting system with this specific ballast gains the merits of lower system cost and more flexibilities in lighting fixture design, as compared to conventional systems