草酸二乙酯气相催化加氢合成乙二醇的研究

对草酸二乙酯气相催化加氢生成乙二醇反应进行了实验研究。研制了不含铬的铜基催化剂,并考察了催化剂的制备条件对反应结果的影响。结果表明,Cu/SiO_2质量比为0.67,活化温度为350℃时最佳。在上述催化剂制备的基础上,提出了最佳反应条件。     

Synthesis, characteristics and oxygen-sensitive properties of SrMgxTi 1 − xO3 nanocrystals

SrMg_xTi_{1 - x}O₃ nanocrystals (x = 0.1–0.6) were synthesized by the stearic acid gel method. Powder samples were characterized by X-ray diffraction and X-ray photoelectron (XP) spectroscopy. The results showed that the lattice parameter a and the O 1s XP spectrum changed not only with the Mg content x but also with the grain size d of the samples. The conductivity of a thick film specimen fabricated on an aluminium oxide wafer was investigated in a nitrogen—oxygen atmosphere.     

小方坯连铸机的PLC自动控制

本文对弧型小方坯连铸机工艺与设备进行了分析，介绍了连铸生产的ＰＬＣ控制系统。及其软件设计。     

工业汽轮机的清洗

本文介绍了用饱和蒸汽对冷凝式汽轮机进行清洗除垢时主要参数的确定、操作要点及清洗方案，清洗后的汽轮机运行正常。     

岩心PI值试验研究及应用

主要论述了在多功能采油化学用剂评价仪上进行的岩心ＰＩ值试验的步骤，现象及结论。重点考察了岩心ＰＩ值与渗透率、流量及注入截面面积的关系；平行管岩心复合ＰＩ值和其中单管岩心ＰＩ值的关系。     

底敞口充气浮箱研究和试验

提出底敞口充气浮箱的结构和概念。经模型模拟试验研究分析，经典浮力定律可用于这种浮箱的浮力计算；其动充气状况还具有一定的允许伤损面积。它的研究将为水陆两用车辆增大浮力，缩小外形，提高水上自下而上能力和潜驶潜伏提供具有诱惑力的工程应用前景。     

2-D dopant profiling in VLSI devices using dopant-selectiveetching: an atomic force microscopy study

We report a detailed mapping of a 2-D dopant profile on a fully processed industrial sample with large dynamic range and high spatial resolution by utilizing a dopant-selective etching process and Atomic Force Microscopy. The experimental results show excellent agreement with those obtained from SRP and SIMS as corroborative methods. We also discuss the most critical factors which influence the applicability, reproducibility, and reliability of this method     

The effects of plasma etching induced gate oxide degradation onMOSFET's 1/f noise

The effects of the plasma etching process induced gate oxide damages on device's low frequency noise behavior are investigated on MOSFET's fabricated with different field plate perimeter to gate area ratio antennas. Abnormal 1/f noise spectrum with a shoulder centered in the frequency range of 100 and to 1 kHz was frequently observed in small geometry devices, and it is attributable to a nonuniform distribution of oxide traps induced by plasma etching process