High-speed InGaP/GaAs HBTs with a strained InxGa1-xAs base

A self-aligned InGaP/GaAs heterojunction bipolar transistor with a compositionally graded In_xGa_1-xAs base has been demonstrated with f_T=83 GHz and f_max=197 GHz. To our knowledge, these results are the highest reported for both parameters in InGaP/GaAs HBT's. The graded base, which improves electron transport through the base, results in a DC current gain and a cutoff frequency which are 100% and 20% higher, respectively, than that achieved by an identical device with a nongraded base. The high f_max results from a heavily doped base, self-aligned base contacts, and a self-aligned collector etch. These results demonstrate the applicability of InGaP/GaAs HBT's in high-speed microwave applications     

Isolation and characterization of C-reactive protein (CRP) cDNA and genomic DNA from Xenopus laevis. A species representing an intermediate stage in CRP evolution

C-reactive protein (CRP) is a prototypic acute phase protein in human and rabbit. Although it is structurally and functionally conserved from invertebrate to human, there are species-specific differences in patterns of expression and putative function. To further investigate the biological significance, regulation, and evolution of CRP, we isolated Xenopus CRP and subsequently derived and sequenced corresponding cDNA and the genomic clones. The structure and expression of Xenopus CRP were also compared to those of the other CRPs. Analyses of the amino acid sequence and the nucleotide sequence reveal that the mature Xenopus CRP is a 222-amino acid protein preceded by a 16-residue signal peptide. During development, Xenopus CRP is expressed, only when the liver appears, and therefore is not likely to play a role in early embryonic development. Compared to other species, Xenopus CRP is present at an intermediate low level of < 1 microgram/ml in the normal serum. Unlike human and rabbit CRP, Xenopus CRP is not induced by turpentine or heatshock treatment. The heatshock consensus sequence (Woo, P., Korenberg, J. R., and Whitehead, A. S. (1985) J. Biol. Chem. 265, 4136-4142) are not present in the Xenopus CRP gene. It is suggested that Xenopus CRP represents a transitional period in CRP evolution when host defenses switched from primitive innate immunity to a much more complex immune system. The constitutive functions of CRP gradually became less essential as the result of the development of a complex immune system.     

Minimum entropy and information measure

Kapur et al. (1995) introduced the MinMax information measure, which is based on both maximum and minimum entropy. The major obstacle for using this measure, in practice, is the difficulty in finding the minimum entropy. An analytical expression has already been developed for calculating the minimum entropy when only variance is specified. An analytical formula is obtained for calculating the minimum entropy when only mean is specified, and numerical examples are given for illustration     

Precipitation behavior of σ phase in fusion zone of dissimilar stainless steel welds during multi-pass GTAW process

The purpose of this study is to investigate the precipitation characteristics of σ phase in the fusion zone of stainless steel welds at various welding passes during a tungsten are welding (GTAW) process. The morphology, quantity, and chemical composition of the δ-ferrite and σ phase were analyzed using optical microscopy (OM), a ferritscope (FS), a X-ray diffractometer (XRD), scanning electron microscopy (SEM), an electron probe micro-analyzer (EPMA), and a wavelength dispersive spectrometer (WDS), respectively. Massive δ-ferrite was observed in the fusion zone of the first pass welds during welding of dissimilar stainless steels. The σ phase precipitated at the inner δ-ferrite particles and decreased δ-ferrite content during the third pass welding. The σ and δ phases can be stabilized by Si element, which promoted the phase transformation of σ→ϱ+λ₂ in the fusion zone of the third pass welds. It was found that the σ phase was a Fe−Cr−Si intermetallic compound found in the fusion zone of the third pass welds during multi-pass welding.     

Optimization of the power ascension path for a boiling water reactor using genetic algorithms

To ensure the core status can meet the requirements of thermal limits, stability and other constraints during the power ascension process of a nuclear power plant, operators usually gradually increase power based on onsite measurements and experience. To reduce the operator’s burden, this research develops a method to find an optimal power ascension path that can be followed by operators. The power ascension path is formulated as a multiobjective optimization problem with the following constraints: power ascension time, thermal limits, core stability and maximum rod line. A genetic algorithm is adopted to obtain the optimal power ascension path. The results show that using our approach full power can be achieved quickly, while maintaining reasonable margins of thermal limit and stability, in addition to satisfying maximum rod line criteria.     

Electron microscopic observations and DNA chain fragmentation studies on apoptosis in bone tumor cells induced by ~(153)Sm-EDTMP

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Anomalous variations of OFF-State leakage current in poly-Si TFTunder static stress

Studies the anomalous variations of the OFF-state leakage current (I_OFF) in n-channel poly-Si thin-film transistors (TFTs) under static stress. The dominant mechanisms for the anomalous I_OFF can be attributed to (1) I_OFF increases due to channel hot electrons trapping at the gate oxide/channel interface and silicon grain boundaries and (2) I_OFF decreases due to hot holes accumulated/trapped near the channel/bottom oxide interface near the source region. Under the stress of high drain bias, serious impact ionization effect will occur to generate hot electrons and hot holes near the drain region. Some of holes will be injected into the gate oxide due to the vertical field (~(V_Gstress V_Dstress)/T _OX) near the drain and the others will be migrated from drain to source along the channel due to lateral electric field (~V_Dstress/L_CH)