红曲色素及其在肉制品中的应用

对红曲色素的性质、生产方法及工艺改进、在肉制品中的应用以及改性等方面进行了综述。     

新疆啤酒花重要品种和一个新品种的成分分析及品质评价

对新疆啤酒花中最重要的 3个品种 (青岛大花、麒麟丰绿、余乐比特 )及一个新培育的品种阜北 -1进行了化学成分及储存性能研究 ,同时与国外引种的 3个优良品种 (马可波罗、努革特及札一 )进行比较。结果表明 :新疆的青岛大花、麒麟丰绿是 α-酸含量中低的苦型花 ,合草酮都占总α-酸的 4 0 %以上 ,酿造品质一般 ;余乐比特和新品种阜北 -1是香型花 ,合草酮分别占总 α-酸的 2 2 .70 %和 3 0 .73 % ,酿造品质较佳 ,酒花油有香型花特点 ;引种的马可波罗和努革特是高α-酸的苦型花 ,札一是香型花 ,它们都保持了原花的优良性能 ;上述 7种啤酒花储存 1 0 0 d后 ,α-酸损失在 8%～ 1 4% ,故不宜久放 ,应尽快加工。     

北缘蔗区甘蔗专用留种田栽培技术研究(续完)──Ⅲ.蔗种茎粗对大田生产的影响的研究

本研究以湘北蔗区常规甘蔗品种NCo310为材料,在1998年进行甘蔗蔗种茎粗对大田生产的影响试验,观察了甘蔗的出苗率、有效茎数、株高、茎粗、单茎重、产量等农艺性状,结果表明蔗种茎粗对大田生产有显著影响,当蔗种茎粗小于1．7cm时,甘蔗大田生产产量显著减少,本研究表明甘蔗中小茎品种如NCo310等只有当播种行距在0．5。～0．6m时,才能获得较多茎粗大于1．7cm的甘蔗种芽．通过1996～1998年三年研究表明,在北缘蔗区建立甘蔗专用留种田栽培制度是切实可行的,但要适当的控制行距和密度．采用甘蔗专用留种田栽培技术,可以明显地提高北缘蔗区的甘蔗生产水平。     

皮鞋设计中内包头与主跟的设计规律

本文通过对皮鞋设计中内包头与主跟的设计方法和数据的分析,从中找出其设计的规律。     

SAW器件测试的误差修正

讨论描述两端对网络的导纳矩阵(Y矩阵)与作为网络分析仪描述两端对网络的散射矩阵参数（S参数）之间的对应关系，分析在SAW器件的测试系统中误差模型以及修正方法，讨论在实际测量中如何选择合适的误差修正以及它们对测试结果的影响。     

双光束耦合相位共轭振荡器的理论与实验研究

首先提出并构造了一种新型的光折变增益振荡器。在强泵浦条件下建立了它的稳态理论,实验研究了它的稳态输出特性。     

红外成像在预警机中的应用

红外成像系统以其在战术上的独特优势,成为现代军事空间预警系统的重要设备。本文就第一代通用组件,第二代高性能焦平面阵列成像系统在预警机中的应用,作了较为详尽的评述。     

Hybrid symbol- and bit-based source-controlled channel decoding for MELP speech parameters

A joint source channel coding (JSCC) scheme which exploits bit-level correlation as well as symbol-level correlation efficiently in a source-controlled channel decoding (SCCD) process is proposed and applied to the mixed-excitation linear prediction (MELP) parameters of speech. A modified BCJR algorithm is also proposed for use in the SCCD algorithm. Simulation results show that our proposed scheme performs better than other redundancy-based JSCC schemes such as bit-based SCCD, soft-bit speech decoding (SBSD) and iterative source-channel decoding.     

A viable self-aligned bottom-gate MOS transistor technology for deep submicron 3-D SRAM

In this paper, the effect of the nonself-aligned process on the performance variation of a bottom-gate metal oxide semiconductor (MOS) transistor is discussed using a device simulator. The simulation results predict that the nonself-aligned bottom-gate MOS transistor cannot be scaled into the deep submicron regions. A simple fully self-aligned bottom-gate (FSABG) metal oxide semiconductor field effect transistor (MOSFET) technology is then proposed and developed. A new technique for forming thermal oxide on poly-Si serving as the bottom-gate dielectric is also investigated. It is found that the quality of the oxide on the poly-Si recrystallized by the metal induced uni-lateral crystallization (MIUC) is much higher than that by the solid phase crystallization (SPC). Deep submicron fully self-aligned bottom-gate pMOS transistors are fabricated successfully using the proposed technology. The experimentally measured results indicate the device performances depend strongly on the channel-width, and get comparable to that of a single crystal MOSFET if the channel width is less than 0.5/spl mu/m. The effects of the channel width on the device performances are discussed. In addition, the experimental results also confirm that the proposed technology has a good control of the channel film thickness.     

Charging effect of Si nanocrystals in gate oxide near gate on MOS capacitance

MOS structure with Si nanocrystals embedded in the gate oxide close to the gate has a much larger capacitance compared to a similar MOS structure without the nanocrystals. However, charge trapping in the nanocrystals reduces the capacitance dramatically, and after most of the nanocrystals are charged up the capacitance is much smaller than that of the MOS structure without nanocrystals. An equivalent-capacitance model is proposed to explain the phenomena observed.