Distribution of vanadium and nickel in crudes from the Prorva zone of Kazakhstan

Translated from Khimiya i Tekhnologiya Topliv i Masel, No. 12, pp. 15–16, December, 1992.     

Fast approximate analysis for token passing LAN protocol with asymmetrically distributed traffic loads

A new approximate analytical expression for the mean packet delay for a non-exhaustive token passing LAN is derived and compared with discrete event computer simulation. The computational problems associated with the exact and other approximate treatments are avoided because the need to solve a system of simultaneous equations is removed.<>     

A first-order current-steering sigma-delta modulator

A new architecture is presented for a first-order sigma-delta (ΣΔ) modulator. The system achieves a high sampling frequency, can be used as a building block for higher-order modulators, and uses circuit techniques that are largely independent of a specific technology. The key features of this implementation are that it operates in a continuous-time (as opposed to switched) mode and does not need feedback amplifiers. To test the validity of the concept, the system was realized in 2-μm, n-well, double-metal, single-poly technology. It has a measured resolution of 9 b and a linearity of 13 b at a clock frequency of 20 MHz with an oversampling ratio of 128. It operates from a power supply of ±2.5 V with a power consumption of 3 mW. The circuit occupies an area of 0.92 mm²     

Influence of dietary sodium bicarbonate on the potassium metabolism of growing dairy calves.

We evaluated the influence of supplemental dietary NaHCO3 on K metabolism of young dairy calves. Thirty-two Holstein and Jersey male and female calves were blocked at 56 to 70 d after birth according to breed, sex, and age and assigned randomly to a 2 x 2 factorial arrangement of dietary treatments for 8 wk: .4% K with 0% NaHCO3, .4% K with 2% NaHCO3, .6% K with 0% NaHCO3, and .6% K with 2% NaHCO3. Feed intake was not affected by dietary KCl or NaHCO3 supplementation, but average daily gain increased with increased K and tended to be reduced by dietary NaHCO3. Plasma K was elevated by increased dietary K but generally was unaffected by NaHCO3. Urinary Ca excretion appeared to be reduced by NaHCO3; urine pH increased with supplemental NaHCO3. Results indicate 1) the K requirement of the growing calf is between .40 and .55% of diet DM, 2) because urinary K excretion was elevated by dietary NaHCO3, the K requirement may be increased when the diet is supplemented with NaHCO3, and 3) average daily gain and plasma K are sensitive indicators of dietary K in the growing calf.     

45% efficient silicon photovoltaic cell under monochromatic light

Improvements in the performance of silicon photovoltaic cells for solar applications are adapted for nonsolar photovoltaic applications. Improved monochromatic light efficiencies above 45% are reported including efficiencies close to 40% for relatively long-wavelength (1.064 μm) light as produced by neodymium-doped yttrium-aluminum garnet (Nd:YAG) lasers     

Analytical investigation of factors influencing power systemstabilizers performance

Results of simulations, designed to illustrate the influence of power system stabilizers (PSS) on inter-area and local oscillations in interconnected power systems, are reported. It is shown that the PSS location and the voltage characteristics of the system loads are significant factors in the ability of a PSS to increase the damping of interarea oscillations. It is also shown that an interaction between modes in two distinct parts of a power system is possible, due to resonance, and that this might cause distortions in mode shape and participation factors     

The origination and optimization of Si/SiO/sub 2/ interface roughness and its effect on CMOS performance

As CMOS device dimensions scale down to 100 nm and beyond, the interface roughness between Si and SiO/sub 2/ has become critical to device performance and reliability. Si/SiO/sub 2/ interface roughness degrades channel mobility decreasing drive currents. The authors have used atomic force microscopy to study surface roughness in the processing of 0.16 /spl mu/m CMOS integrated circuits. All of the process steps that could potentially affect the interface roughness have been studied. The results show that oxidation is the major contributor to the interface roughness. The rms roughness is found to be linearly dependent on oxide thickness. Transistors with Si/SiO/sub 2/ interface rms roughness that has been reduced from 1.6 to 1.1 /spl Aring/ by reducing oxide thicknesses show improved device drive currents. This technique for interfacial smoothing and device performance improvement has the advantage of being easily implemented in today's technology.