高频地波雷达相位补偿系统

OSMAR2000采用的是“一发八收,收发共用”模式的相控阵高频地波雷达.为了扩大其探测的范围,在新的雷达系统中将采用多发多收的模式,从而导致当信号通过通道后,信号的相位会因受到通道的调制而发生改变,使得雷达无法正常工作,因此需要对通道的相位进行实时监控和补偿.在参考了低频段的相位测量原理和射频段的相移电路的设计理论的基础上,该文提出了基于差分放大器、容阻和容感器件的高频地波雷达收发通道的相位控制系统.     

2.5Gb/s和3.125Gb/s速率级0.35μmCMOS限幅放大器

采用了TSMC0.35μm CMOS工艺实现了可用于SONET/SDH2.5Gb/s和3.125Gb/s速率级光纤通信系统的限幅放大器。通过在芯片测试其最小输入动态范围可达8mVp—p，单端输出摆幅为400mVp-p，功耗250mW，含信号丢失检测功能，可以满足商用化光纤通信系统的使用标准。     

基于S-CDMA的HFC上行信道接入协议性能仿真分析

讨论了基于S－CDMA的HFC网上行信道的高效接入协议－SAMA，提出了双信道接入机制的工作原理，并对系统性能进行了分析与计算机仿真，得到一些有意义的结论。     

Formation of low-resistivity poly-Si and SiNx films by Cat-CVD for ULSI application

In this paper, bulk-Si metal–oxide–semiconductor field effect transistors (MOSFETs) are fabricated using the catalytic chemical vapor deposition (Cat-CVD) method as an alternative technology to the conventional high-temperature thermal chemical vapor deposition. Particularly, formation of low-resistivity phosphorus (P)-doped poly-Si films is attempted by using Cat-CVD-deposited amorphous silicon (a-Si) films and successive rapid thermal annealing (RTA) of them. Even after RTA processes, neither peeling nor bubbling are observed, since hydrogen contents in Cat-CVD a-Si films can be as low as 1.1%. Both the crystallization and low resistivity of 0.004 Ω·cm are realized by RTA at 1000 °C for only 5 s. It is also revealed that Cat-CVD SiN_x films prepared at 250 °C show excellent oxidation resistance, when the thickness of films is larger than approximately 10 nm for wet O₂ oxidation at 1100 °C. It is found that the thickness required to stop oxygen penetration is equivalent to that for thermal CVD SiN_x prepared at 750 °C. Finally, complementary MOSFETs (CMOSs) of single-crystalline Si were fabricated by using Cat-CVD poly-Si for gate electrodes and SiN_x films for masks of local oxidation of silicon (LOCOS). At 3.3 V operation, less than 1.0 pA μm⁻¹ of OFF leakage current and ON/OFF ratio of 10⁷–10⁸ are realized, i.e. the devices can operate similarly to conventional thermal CVD process.     

发光体MAl2O4:Eu2+,RE3+的长余辉形成机理

提出了Eu^2 激活的MAl2O4:Eu^2 ,RE^3 （M＝Ca,Sr,Ba;RE=Dy,Nd,Ho,Er,Pr,Tb等稀土元素）系列铝酸盐发光体的长余辉发光机理。认为O^2-空位Vo是一种电子俘获陷际，是形成余辉的根本原因，RE^3 的引入使陷阱深度适宜而使余辉时间延长。缺陷在晶格中成簇分布，Vo和碱土金属离子空位VM在高温下可相互缔合。利用电子陷阱模型解释了实验中的一些普遍现象并提出了固相反应法合成此类发光体的工艺改进措施。     

Computer-controlled ion-selective electrode switch

The construction of a microcomputer-controlled electrode switch for use in potentiometric determinations is described. This can be coupled to most of the analytical equipment usually found in laboratories, to enable a setting up of automatic systems capable of performing sequential determinations with several ion-selective electrodes. The assessment of its analytical usage and behaviour are discussed.     

压缩弯曲小半径中频弯管工艺的研究

在分析了感应加热小半径弯管形变机理的基础上，提出了压缩弯曲的成型工艺，研制出了小半径中频弯管设备，并进行了大量的工艺实验和实验研究，取得了满意的结果。     

轴对称空间问题的塑性解法

本文从理想材料轴对称弹塑性问题的所有基本方程出发,研究了全塑性时轴对称空间问题的塑性应变分布规律和应力场,并推导了控制应力分布的定解方程,给出了全塑性轴对称问题的通用解法。     

MEMORY·童年·印象--合肥市政务文化新区儿童公园概念性方案

合肥市政务文化新区儿童乐园的概念性方案,充分考虑了儿童的心理和成长交流需要,以儿童的自发活动为特色,兼顾各类活动设施,创造丰富活动空间,构筑了一个富有感染力、空间变幻多彩的都市儿童乐园.     

2005电梯贸易顺差显现国际市场前景光明

加入WTO以后，我国的电梯行业发展势如破竹。国内市场国际化开辟了中国电梯行业全面发展的新纪元国际市场国内化彻底打破了国际市场的贸易壁垒，中国电梯走出国门，寻找更大的发展空间，前景一片光明。