桥面板与覆层结合界面的干燥收缩诱导应力估算

采用三维非线性有限元分析方法评价与估算了桥面板与混凝七覆层间结合界面的干燥收缩诱导应力.并采用修正Fowler准则测算了桥面板与聚合物覆层间的热诱导应力.在评价覆层与面板问相对厚度to/ts的影响时,ts取常数200mm;在评价相对弹性模量Eo/Es的影响时,Es取常数,27.5GPa,并设定了3个Eo/Es比值,分别...     

基于Faster R-CNN的城市道路目标检测

本文针对当前城市道路复杂场景下目标检测精度低下问题,提出了一种多尺度Faster R-CNN模型应用于城市道路目标检测,为提高了特征图卷积后的特征精度,引入了特征金字塔结构,以融合不同尺度特征,以提高检测精度。通过区域建议网络（RPN）解决了区域对物体或背景的判断,同时利用回归模型对目标框进行修正。在BDD 100K数据集进行实验验证,结果表明本文方法与常见的目标检测方法检测的查准均都高。     

A fully integrated high IP1dB CMOS SPDT switch using stacked transistors for 2.4 GHz TDD transceiver applications

A transmit/receive (T/R) switch is an essential module of every modern time division duplex (TDD) transceiver circuit. A T/R switch with high power handling capacity in CMOS process is difficult to design due to capacitive coupling of radio frequency signals to the substrate. This paper proposes a single-pole-double-throw (SPDT) T/R switch designed in a standard Silterra 130 nm CMOS process for high-power applications like RFID readers. The results reveal that, in 2.4 GHz ISM band, the proposed switch exhibits a very high input P1dB of 39 dBm with insertion loss of only 0.34 dB and isolation of 40 dB in transmit mode but 1.08 dB insertion loss and 30 dB isolation in receive mode. Stacked thick-oxide triple-well transistors, resistive body floating and negative control voltages are used to achieve such lucrative performance. Moreover, the chip size of the designed switch is only 0.034 mm² as bulky inductors and capacitors are avoided. The Monte-Carlo and corner analyses confirm that the performance of the switch is also quite stable and reliable.     

形变热处理制备的纳米晶NiTi形状记忆合金的超弹性行为（英文）

研究冷轧和后续退火形变热处理对Ni_(50)Ti_(50)形状记忆合金超弹性行为的影响。采用铜坩埚真空感应熔炼法制备样品。将成分均匀的样品进行热轧后在900°C退火,然后再进行冷轧,冷轧后样品的厚度有不同程度的减少,最大可达70%。透射电镜检测结果显示严重的冷轧导致Ni_(50)Ti_(50)合金中形成了纳米晶和非晶的复合显微组织。400°C下退火1 h后,冷轧样品中的非晶发生晶化形成纳米晶组织。随着冷轧变形量的增加,在超弹性实验中Ni_(50)Ti_(50)合金的弹性应变增加,变形量为70%的冷轧-退火样品其弹性应变为12%。此外,随着变形量的增加,应力诱导马氏体相变的临界应力提高。值得注意的是,70%变形量的冷轧-退火样品的阻尼容量值为28 J/cm3,明显高于商业NiTi合金。