Probabilistic evaluation of lateral extent of soil liquefaction under earthquake loading

A Monte Carlo simulation method for calculating the probability of soil liquefaction of a finite area in which the ground motion is propagated upward from the bedrock through the soil layers is presented. The vertical propagation of the ground motion through the soil layers is analyzed using random vibration analysis. To account for the variability of soil properties with depth, the soil deposit is divided into layers. Within each layer the horizontal statistical correlation of the undrained cyclic shearing strength against liquefaction is taken into consideration by describing it as a two-dimensional homogeneous random field. The method computes the probability of liquefaction spreading over a specified area under a given earthquake loading considering the effects of spatial correlation of soil properties.     

Synthesis and characterization of tungsten disulphide films grown by pulsed-laser deposition

The synthesis and characterization of tungsten disulphide (WS₂) films grown on 440C stainless steel substrates using the 248 nm line from a KrF excimer laser are reported. Film properties could be adjusted by controlling substrate temperature and by laser or thermal anneals. X-ray photoelectron spectroscopy, glancing angle XRD, Raman spectroscopy and high-resolution scanning electron microscopy were used to evaluate film chemistry, crystallinity and morphology. Films grown at room temperature were amorphous, near stoichiometric, and had a multiplicity of chemical states. Local order and bonding were improved most dramatically through post-deposition laser anneals. Crystallite size could be increased by raising the substrate temperature during deposition and, to a lesser degree, by post-deposition thermal anneals. Local disorder was observed within the larger crystallites compared to those that were laser annealed. Crystallinity was induced in amorphous films by mechanical rubbing at room temperature under conditions where frictional heating was negligible. The degree of control over film properties provided by PLD demonstrates its value for growing/designing tribological coatings.     

EFFECT OF THE RATIO Th/U ON TL DATING ACCURACY

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Multitemporal passive microwave mapping in MACHYDRO'90

MACHYDR0'90 was an experiment conducted in Pennsylvania in 1990 to study the synergistic use of remote sensors in multitemporal hydrologic studies. As part of this mission the pushbroom microwave radiometer was flown and used to produce brightness temperature maps. Verification studies and vegetation algorithms for mixed land cover areas are described     

Optoelectronic integration of a GaAs/AlGaAs bistable field effecttransistor (BISFET) and LED

The bistable field effect transistor (BISFET) is a novel inversion-channel switching device exhibiting abrupt current transitions and hysteresis in its output characteristics. The semiconductor structure of the BISFET is compatible with a range of electronic and optoelectronic devices. In this work, integration of a BISFET with an LED is reported. Both devices have been implemented on a single semiconductor substrate using a single fabrication sequence. The BISFET is used to current drive the LED. Abrupt transitions and hysteresis are seen in the optical output from the circuit in the range of gate voltage from 1.75 V to 1.9 V     

Modeling the I-V characteristics of fully depleted submicrometerSOI MOSFET's

In this paper, an analytic current-voltage model for submicrometer fully-depleted (FD) silicon-on-insulator (SOI) MOSFET's is presented. This model takes into account the source/drain series resistances which can be especially high in thin film SOI devices. The effect of drain induced conductivity enhancement is also included, which is important for submicrometer channels. The model is verified by comparison to measured SOI I-V characteristics. Good agreement is obtained for SOI film thicknesses ranging from 40 to 220 nm and effective channel lengths down to 0.25 μm     

Suppression of boron penetration in p+ polysilicon gateP-MOSFETs using low-temperature gate-oxide N2O anneal

It has been reported that high-temperature (~1100°C) N₂ O-annealed oxide can block boron penetration from poly-Si gates to the silicon substrate. However, this high-temperature step may be inappropriate for the low thermal budgets required of deep-submicron ULSI MOSFETs. Low-temperature (900~950°C) N₂O-annealed gate oxide is also a good barrier to boron penetration. For the first time, the change in channel doping profile due to compensation of arsenic and boron ionized impurities was resolved using MOS C-V measurement techniques. It was found that the higher the nitrogen concentration incorporated at Si/SiO₂ interface, the more effective is the suppression of boron penetration. The experimental results also suggest that, for 60~110 Å gate oxides, a certain amount of nitrogen (~2.2%) incorporated near the Si/SiO₂ interface is essential to effectively prevent boron diffusing into the underlying silicon substrate