Isolation, DNA sequence and regulation of a new cell division cycle gene from the yeast Saccharomyces cerevisiae

A new complementation group of temperature-sensitive mutants of the yeast Saccharomyces cerevisiae (ts26-1 and ts26-2) has been isolated and characterized. This mutation maps at 40.7 cM from arg8 and 48.9 cM from arg1 on the left arm of chromosome XV of yeast, providing that it is a newly identified gene. The dumbbell-shape terminal morphology of the mutant cells at the restrictive temperatures is a characteristic of mutants defective in DNA replication. To study the defect of macromolecule synthesis in the mutant cells, DNA, RNA, and protein synthesis were measured at both permissive and restrictive temperatures. The data suggest that the primary defect of this mutation is at the initiation step of DNA synthesis. The gene has been cloned from an S. cerevisiae genomic library by rescue of the conditional lethality of the mutants. It is present as a single copy in the haploid genome. DNA-RNA hybridization of the gene has identified 1 kb RNA, which is under cell-division-cycle control. DNA sequence analysis of the gene has identified an open reading frame capable of encoding a protein of molecular weight 25,055 (214 amino acids).     

Optical soliton transmission experiment in a comb-like dispersion profiled fiber loop

We discuss the properties of comb-like dispersion profiled fiber (CDPF) for an optical soliton transmission. It is found that the CDPF in which the standard single-mode fiber is placed both at the first and at the end of each section is more suitable to reduce dispersive waves if chirp-free transform limited optical pulse is used as a light source. A 10-ps optical soliton transmission experiment is performed in such a CDPF over 1000 km with the amplifier spacing of 80 km that corresponds to 3.1 times the dispersion distance.     

Nanoimprinting using release-agent-coated resins

A fluorinated self-assembled monolayer (F-SAM) is mainly used as the antisticking layer. To prevent the F-SAM coated on the nanoimprint lithography (NIL) mold from deteriorating, we propose a new form of nanoimprinting using a release-agent-coated resin. The results from measuring the surface free energy and observations by scanning probe microscopy (SPM) confirmed that the surface free energy, frictional force, and adhesion force of the release-agent spray-coated polymethylmethacrylate (PMMA) were lower than those of PMMA. To prove the release-agent spray-coated PMMA had a releasing effect, we tried to undertake thermal nanoimprinting on it using a mold without F-SAM. The pattern was clearly imprinted on the resin without any signs of adhesion.     

Occurrence of multiple ethyl 4-chloro-3-oxobutanoate-reducing enzymes in Candida magnoliae

Multiple ethyl 4-chloro-3-oxobutanoate (COBE)-reducing enzymes were isolated from a cell-free extract of Candida magnoliae. A NADPH-dependent COBE-reducing enzyme, distinct from the carbonyl reductase and aldehyde reductase previously reported, was purified to homogeneity using five steps, including polyethylene glycol treatment. The relative molecular mass of the enzyme was estimated to be 86,000 on high performance gel-permeation chromatography and 29,000 on sodium dodecyl sulfate polyacrylamide gel electrophoresis. The enzyme catalyzed the reduction of COBE to the corresponding (S)-alcohol with a 51% enantiomeric excess. The substrate specificity of the enzyme was different from those of the other COBE-reducing enzymes of the same strain. The partial amino acid sequences of the enzyme showed that it belongs to the short chain alcohol dehydrogenase/reductase (SDR) family. This is the first report of multiple COBE-reducing enzymes with various stereoselectivities occurring in the same strain but belonging to different (super)families.     

A 64-Mb DRAM with meshed power line

A 64-Mb dynamic RAM (DRAM) has been developed with a meshed power line (MPL) and a quasi-distributed sense-amplifier driver (qDSAD) scheme. It realizes high speed, t_RAS=50 ns (typical) at V_cc=3.3 V, and 16-b input/output (I/O). This MPL+qDSAD scheme can reduce sensing delay caused by the metal layer resistance. Furthermore, to suppress crosstalk noise, a V_SS shield peripheral layout scheme has been introduced, which also widens power line widths. This 64-Mb DRAM was fabricated with 0.4-μm CMOS technology using KrF excimer laser lithography. A newly developed memory cell structure, the tunnel-shaped stacked-capacitor cell (TSSC), was adapted to this 64-Mb DRAM     

A CCD video delay line with charge-integrating amplifier

The authors describe a charge coupled device (CCD) sense amplifier in a video delay line which overcomes the major limitations of conventional floating diffusion amplifier (FDA) technology, such as limited output voltage and operating temperature range. These advances are implemented with a switched-capacitor integrator (SCI) using an op amp with a newly developed output stage in a CMOS-CCD process. This circuit is effected within the constraints of 5-V operation by using negative pulses to reach the low channel potential of the CCD in the pinning region in the final gate of the CCD. The chip operates with 14.3-MHz clock and 5-V power supply, and can process a 1.0-V_p-p signal voltage under 1% distortion, and under 4% gain variation from -20 to 70°C     

InGaP//GaAs//c‐Si 3‐junction solar cells employing spectrum‐splitting system

In this work, we practically demonstrated spectrum‐splitting approach for advances in efficiency of photovoltaic cells. Firstly, a‐Si:H//c‐Si 2‐junction configuration was designed, which exhibited 24.4% efficiency with the spectrum splitting at 620 nm. Then, we improved the top cell property by employing InGaP cells instead of the a‐Si:H, resulting in an achievement of efficiency about 28.8%. In addition, we constructed 3‐junction spectrum‐splitting system with two optical splitters, and GaAs solar cells as middle cell. This InGaP//GaAs//c‐Si architecture was found to deliver 30.9% conversion efficiency. Our splitting system includes convex lenses for light concentration about 10 suns, which provided concentrated efficiency exceeding 33.0%. These results suggest that our demonstration of 3‐junction spectrum‐splitting approach can be a promising candidate for highly efficient photovoltaic technologies. Copyright © 2016 John Wiley & Sons, Ltd.     

Novel structure of GaAs-based interdigital-gated HEMT plasma devices for solid-state THz wave amplifier

Theoretical analysis of potential distribution in the interdigital-gated high electron mobility transistor (HEMT) plasma wave device was carried out. The dc I–V characteristics of capacitively coupled interdigital structure showed that uniformity of electric field under the interdigital gates was improved compared to the dc-connected interdigital gate structure. Admittance measurements of capacitively coupled interdigital gate structure in the microwave region of 10–40 GHz showed the conductance modulation by drain–source voltage. These results indicate the existence of plasma wave interactions.     

Development of a high temperature-atmospheric pressure environmental cell for high-resolution TEM

An environmental cell for high-temperature, high-resolution transmission electron microscopy of nanomaterials in near atmospheric pressures is developed. The developed environmental cell is a side-entry type with built-in specimen-heating element and micropressure gauge. The relationship between the cell condition and the quality of the transmission electron microscopic (TEM) image and the diffraction pattern was examined experimentally and theoretically. By using the cell consisting of two electron-transparent silicon nitride thin films as the window material, the gas pressure inside the environmental cell is continuously controlled from 10(-5)?Pa to the atmospheric pressure in a high-vacuum TEM specimen chamber. TEM image resolutions of 0.23 and 0.31?nm were obtained using 15-nm-thick silicon nitride film windows with the pressure inside the cell being around 5?×?10(-5) and 1?×?10(4)?Pa, respectively.     

Transport-Coefficient Dependence of Current-Induced Cooling Effect in a Two-Dimensional Electron Gas

The dependence of the current-induced cooling effect on the electron mobility??? _e is explored for a two-dimensional electron gas (2DEG) subjected to a perpendicular magnetic field. We calculate the distributions of the electrochemical potentials and the temperatures under a magnetic field, fully taking account of thermoelectric and thermomagnetic phenomena. Whereas the electrochemical potential and the electric current remain qualitatively unchanged, the temperature distribution exhibits drastic mobility dependence. The lower-mobility system has cold and hot areas at opposite corners, which results from the heat current brought about by the Ettingshausen effect in the vicinity of the adiabatic boundaries. The cooling effect is intensified by an increase in??? _e. Intriguingly, the cold and hot areas change places with each other as the mobility??? _e is further increased. This is because the heating current on the adiabatic edges due to the Righi?CLeduc effect exceeds that due to the Ettingshausen effect in the opposite direction.