Expression of V642 APP mutant causes cellular apoptosis as Alzheimer trait-linked phenotype

APP is a transmembrane precursor of beta-amyloid. In dominantly inherited familial Alzheimer's disease (FAD), point mutations V6421, V642F and V642G have been discovered in APP695. Here we show that expression of these mutants (FAD-APPs) causes a clone of COS cells to undergo apoptosis associated with DNA fragmentation. Apoptosis by the three FAD-APPs was the highest among all possible V642 mutants; normal APP695 had no effect on apoptosis, suggesting that apoptosis by APP mutants in this system is phenotypically linked to the FAD trait. FAD-APP-induced apoptosis was sensitive to bcl-2 and most probably mediated by heteromeric G proteins. This study presents a model system allowing analysis of the mechanism for FAD-APP-induced cytotoxicity.     

Hot-carrier effects in scaled MOS devices

A universal guideline and state-of-the-art hot-carrier effects in scaled MOSFETs are reviewed and discussed from the viewpoints of 1) DC and AC hot-carrier effects, 2) hot-carrier detrapping phenomena, 3) mechanical stress effects on hot-carrier phenomena, and 4) hot-carrier resistant device structures.In the deep-submicron region, the hot-carrier applicable voltage is less than 3 V, so AC hot-carrier effects from the dynamic operation of actual circuits should be taken into account. Despite much experimentation and analysis, there is still no universally accepted theory that explain the AC degradation mechanism. This is because the noise caused by the wiring inductance in ULSI circuits and in measurement systems screens the intrinsic AC hot-carrier effects.Here, AC hot-carrier degradation enhanced by gate pulse-induced-noise is analyzed experimentally and theoretically. After eliminating the noise problem, it is found that AC hot-carrier degradation in LDD (Lightly doped drain) and GOLD (gate-drain overlapped device) structures can be estimated based on DC degradation in terms of the effective stress time which takes the duty ratio into account. In addition, it is found that the noise is negligible when the wiring inductance is smaller that 80 nH (250 mω), which is important for future circuit design.Furthermore, hot-carrier detrapping effects, especially in p-channel MOS devices, and hot-carrier phenomena under mechanical stress are investigated experimentally to better understand the underlying hot-carrier physics. Finally, future hot-carrier resistant device structures are discussed.     

An ESR study of the film formation steps of vapor deposition polymerization of polyamic acid

A film of polyamic acid is formed by vapor deposition polymerization of pyromellitic dianhydride (PMDA) and 4,4′-diaminodiphenyl ether (ODA). We have taken ESR spectrum during the polymerization process and compared it with the ESR spectrum of films obtained from solution polymerization. In the intermediate polymers during vapor deposition polymerization, the amide bond (? CONH? ) is coplanar with the benzene ring and two protons in the PMDA molecule. This intermediate polymer has one unpaired electron that interacts with the two nitrogen nuclei equally. On the other hand, in the polymer obtained by solution polymerization, the amide bond and the benzene ring of PMDA are not coplanar. In this polymer, too, some of the molecules have an unpaired electron that seems to have almost no coupling with NH groups. These results imply that the polymer formation via vapor deposition proceeds through different intermediates and different molecular configurations from that via the solution process.     

Integrated optical devices of InGaAsP/InP heterojunction phototransistor and inner stripe light-emitting diode

New integrated optical devices combining an InGaAsP/InP HPT and an inner-stripe LED are proposed and their fabrication processes are described. The device functions of light amplification, optical bistability, and optical switching are demonstrated in the 1-μm wavelength region.     

Metallized ultra-shallow-junction device technology for sub-0.1μm gate MOSFET's

This paper describes a new ultra-thin SOI-CMOS structure offering reduced parasitic diffusion-layer resistance. It addresses ways to deal with the ultra-shallow junctions required by sub-0.1 μm MOSFET's. Based on a CVD tungsten process we experimentally investigate the characteristics of selectively grown tungsten used in the source and drain region made in SOI layers of various thicknesses ranging from 10 to 100 nm. We also investigate certain CMOS device characteristics. The SOI-CMOS structure, with low parasitic diffusion-layer resistance and good contact characteristics for ultra-shallow junction devices exhibits superior device performance and high scalability     

TRVs and fault clearing stresses in extra-high-voltage radial networks

To cope with the high rate of increase of power demand in the main industrialized districts in Japan, 550-kV transmission systems covering the districts have been reinforced, with most of the main power plants connected directly to these systems. Through 550-/300-kV substations, the majority of power to the districts is supplied by 300-kV systems. To limit the excess short-circuit capacity in the 300-kV systems, they tend to be reconstructed as so-called radial networks. In radial networks with high short-circuit capacity and relatively small number of transmission lines connected to the substation busbars, the rate of rise of TRV can be far higher than standard value. This paper analyzes the transient recovery voltages (TRV) in such extra-high-voltage radial networks in Japan, together with the relevant stresses to circuit-breakers during fault clearings. Future system conditions have also been introduced. As the typical rate of rise of the TRV values, more than twice that of today's standard ones are probable.     

Photoinduced bidirectional phase transitions in single crystals of polydiacetylenes

Photoinduced phase transitions have been observed between the two phases in single crystals of polydiacetylenes with side-groups of alkylurethanes. The threshold of the excitation intensity for the photochromism is extremely low, one absorbed photon per 140 repeated backbone units, indicating a collective nature of the photoconversion. The excitation spectra for the converted fraction clearly show that the photoinduced phase transition is mediated by photogeneration of polaronic species and not of singlet excitons.     

Robust stabilization of a magnetic suspension system using H∞ Control Theory

This paper presents the robust control design of a magnetic suspension system for a flexible beam which is a simplified model of an elastic rotor in a magnetic bearing system. To stabilize this magnetic suspension system which is unstable in nature, the H^infin; control theory is applied for a design of the control system. To apply the H^infin; control theory, a statespace model of an augmented plant with frequency-weighting functions is constructed. This augmented plant has two inputs which are the exogenous inputs and the control inputs, and two outputs which are the sensor outputs and the regulated outputs. Here we consider the mixed sensitivity problem. The H^infin; controller is implemented by a digital controller which is able to execute the computations very quickly. For the evaluation of the control performance, several experiments are made. The robustness of the closed-loop system is confirmed by the experimental results. The result of this study is useful for the control design of a magnetic bearing system.     

A Tuning Circuit with Two Half-Wave Distributed Junctions for All-NbN SIS Mixers

A novel broadband tuning circuit composed of two low-current-density half-wave NbN/MgO/NbN tunnel junctions connected by a half-wave NbN/MgO/NbN microstrip line has been successfully tested in a quasi-optical mixer at frequencies above 700 GHz. The circuit had a designed center frequency of 870 GHz, was integrated in a center-fed twin-slot antenna, and was fed via a quarter-wave impedance transformer. Heterodyne measurments showed double-side-band receiver noise temperatures equivalent to 6-9 quanta from 675 to 810 GHz for a mixer with a current density of 6.7 kA/cm². The RF bandwidth was broader than that of a conventional mixer using a full-wave junction with the same current density.     

Stress intensity factors of microstructurally small crack

The stress intensity factor (SIF) is widely used for evaluating integrity of cracked components. Averaging the anisotropy of each crystal, the macroscopic behavior of polycrystalline materials is isotropic and homogenous in terms of elastic deformation. However, the anisotropic and/or inhomogeneous property influences on the stress field around a crack if the crack size is small in comparison with the grain. Thus, the SIF of the microstructurally small crack may differ from that in the isotropic body. In present study, the effect of anisotropic/inhomogeneous elasticity on the SIF is investigated by using the finite element analysis (FEA). At first, the SIFs of semi-circular crack in a single crystal and a polycrystalline material are calculated. These reveal that the magnitude of SIF is dependent not only on the crystal orientation but also on the deformation constraint by the neighboring crystals. Then, the statistical scatter of SIF due to the random orientation of crystal orientation in a polycrystal is examined by a Monte Carlo simulation.