Concentrations of native and gold defects in HgCdTe from first principles calculations

We have studied the defect formation energies of the various native (vacancies, interstitials, and antisites) and Au defects in Hg_1−xCd_xTe using density functional-based total energy calculations with ultrasoft pseudo-potentials. These studies are important for infrared (IR) detection technology where the device performance can be severely degraded because of defects. To calculate formation energies, we modeled the neutral and charged defects using supercells containing 64 atoms. From the formation energies, we have determined the defect concentrations as a function of stoichiometry and temperature. We find the prevalent neutral defects to be Au at the Hg site (Au_Hg ), Hg vacancies (V_Hg ), and Te antisites (Te_Hg ). We have also explicitly studied charged defects and have found Te _Hg ²⁺ , Au _Hg ¹⁻ , V _Hg ¹⁻ , V _Hg ²⁻ , and V _Te ²⁺ to have low formation energies. We have identified Au_Hg to be the prevalent Au defect, having concentrations several orders of magnitude greater than the other Au defects. We find that the charge state of V_Hg is primarily (1−) or (2−) depending on the electronic chemical potential.     

Phase equilibria of the Sn-Ag-Cu-Ni quaternary system at the sn-rich corner

Knowledge of phase equilibria of the Sn-Ag-Cu-Ni quaternary system at the Sn-rich corner is important for the understanding of the interfacial reactions at the Sn-Ag-Cu/Ni contacts, which are frequently encountered in recent microelectronic products. Various Sn-Ag-Cu-Ni alloys were prepared and equilibrated at 250°C. The alloys were then quenched and analyzed. The phases were determined by metallography, compositional analysis, and x-ray diffraction (XRD) analysis. No quaternary phases were found. The isoplethal sections at 60at.%Sn, 70at.%Sn, 80at.%Sn, and 90at.%Sn at 250°C are determined. The phase equilibrium relationship was proposed based on the quaternary experimental results and the 250°C isothermal sections of the four constituent ternary systems, Sn-Ag-Cu, Sn-Ag-Ni, Sn-Cu-Ni, and Cu-Ag-Ni. Because there are no ternary phases in all these three systems, all the compounds are in fact binary compounds with various solubilities of the other two elements.     

Rapid thermal annealing effects on the photoluminescence properties of molecular beam epitaxy-grown GaIn(N)As quantum wells with Ga(N)As spacers and barriers

This article describes the effects of rapid thermal annealing (RTA) on the photoluminescence (PL) emission from a series of GaIn(N)As quantum wells. Indium compositions of both 20% and 32% were examined with nominal N compositions of 1% or 2%. The N location was varied within our quantum structure, which can be divided into three regions: (1) quantum well, (2) Ga(N)As spacer layers at the barrier-to-well interface and well-to-barrier interface, and (3) barriers surrounding each quantum well. Eight combinations of samples were examined with varying In content, Ga(N)As spacer layer thickness, N content, and N location in the structure. In the best cases, the presence of these Ga(N)As spacer layers improves the PL properties, due to annealing, with a reduction in the emission wavelength blueshift by ～400 Å, a reduction of the decrease in the full-width at half-maximum (FWHM) by ～5 meV, and a threefold reduction of the increase in integrated intensity. It was also observed that relocating N from the quantum wells to the barriers produces a comparable emission wavelength both before and after annealing. Our results further show that the composition of incorporated N in the material is most influential during the stages of RTA in which relatively small amounts of thermal energy is present from our lower annealing times and temperatures. Hence, we believe a low thermal-energy anneal is responsible for the recovery of the plasma-related crystal damage that was incurred during its growth. However, the In composition in the quantum well is most influential during the latter stages of thermal annealing, at increased times and temperatures, where the wavelength blueshift was roughly independent of the amount of incorporated N. As a result, our investigations into the effects of RTA on the PL properties support other reports that suggest the wavelength blueshift is not due to N diffusion.     

Influence of Si<Subscript>3</Subscript>N<Subscript>4</Subscript> passivation on surface trapping in SiC metal-semiconductor field-effect transistors

The SiC metal-semiconductor field-effect transistors (MESFETs) have been reported to have current instability and strong dispersion caused by trapping phenomena at the surface and in the substrate, which degrade direct-current (DC) and radio-frequency (RF) performance. This paper illustrates the change in electrical characteristics of SiC MESFETs after Si₃N₄ passivation. Because of a reduction of surface trapping effects, Si₃N₄ passivation can diminish current collapse under pulsed DC conditions, increasing the RF power performance. The reduction of surface trapping effects is verified by the change in the ratio of the drain current to the gate current under pinch-off conditions.     

Secure encrypted-data aggregation for wireless sensor networks

This paper proposes a secure encrypted-data aggregation scheme for wireless sensor networks. Our design for data aggregation eliminates redundant sensor readings without using encryption and maintains data secrecy and privacy during transmission. Conventional aggregation functions operate when readings are received in plaintext. If readings are encrypted, aggregation requires decryption creating extra overhead and key management issues. In contrast to conventional schemes, our proposed scheme provides security and privacy, and duplicate instances of original readings will be aggregated into a single packet. Our scheme is resilient to known-plaintext attacks, chosen-plaintext attacks, ciphertext-only attacks and man-in-the-middle attacks. Our experiments show that our proposed aggregation method significantly reduces communication overhead and can be practically implemented in on-the-shelf sensor platforms.     

Curvelet-based fingerprint anti-spoofing

Existing perspiration-based liveness detection algorithms need two successive images (captured in certain time interval), hence they are slow and not useful for real-time applications. Liveness detection methods using extra hardware increase the cost of the system. To alleviate these problems, we propose new curvelet-based method which needs only one fingerprint to detect liveness. Wavelets are very effective in representing objects with isolated point singularities, but fail to represent line and curve singularities. Curvelet transform allows representing singularities along curves in a more efficient way than the wavelets. Ridges oriented in different directions in a fingerprint image are curved; hence curvelets are very significant to characterize fingerprint texture. Textural measures based on curvelet energy and co-occurrence signatures are used to characterize fingerprint image. Dimensionalities of feature sets are reduced by running Pudil’s sequential forward floating selection (SFFS) algorithm. Curvelet energy and co-occurrence signatures are independently tested on three different classifiers: AdaBoost.M1, support vector machine and alternating decision tree. Finally, all the aforementioned classifiers are fused using the “Majority Voting Rule” to form an ensemble classifier. A fingerprint database consisting of 185 real, 90 Fun-Doh and 150 Gummy fingerprints is created by using varieties of artificial materials for casts and moulds of spoof fingerprints. Performance of the new liveness detection approach is found very promising, as it needs only one fingerprint and no extra hardware to detect vitality.     

Co Solubility in Sn and Interfacial Reactions in Sn-Co/Ni Couples

It has been reported that minute Co additions to Sn-based solders are very effective for reducing undercooling, probably due to low Co solubility in Sn. In this study, Co solubility in molten Sn was determined experimentally. According to results of metallographic analysis, Co solubility in molten Sn is as low as 0.04 wt.% at 250°C. Interfacial reactions in Sn-Co/Ni couples at 250°C were examined for Co contents from 0.01 wt.% to 0.4 wt.%. The Ni₃Sn₄ phase was the only interfacial reaction phase in almost the entire Sn-0.01 wt.%Co/Ni couple. For Sn-Co/Ni couples with a Co content higher than 0.01 wt.%, a thin, continuous Ni₃Sn₄ layer and a discontinuous decahedron (Ni,Co)Sn₄ phase were formed in the initial stage of reaction. The reaction products evolved with time. With longer reaction time, the Sn content in the decahedron (Ni,Co)Sn₄ phase decreased, and the (Ni,Co)Sn₄ phase transformed into the (Ni,Co)Sn₂ phase and cleaved into a sheet, which then detached from the interface, after which Ni₃Sn₄ began to grow significantly with longer reaction times.     

Kinetics of Intermetallic Compound Formation at the Interface Between Sn-3.0Ag-0.5Cu Solder and Cu-Zn Alloy Substrates

The growth kinetics of an intermetallic compound (IMC) layer formed between Sn-3.5Ag-0.5Cu (SAC) solders and Cu-Zn alloy substrates was investigated for samples aged at different temperatures. Scallop-shaped Cu₆Sn₅ formed after soldering by dipping Cu or Cu-10 wt.%Zn wires into the molten solder at 260°C. Isothermal aging was performed at 120°C, 150°C, and 180°C for up to 2000 h. During the aging process, the morphology of Cu₆Sn₅ changed to a planar type in both specimens. Typical bilayer of Cu₆Sn₅ and Cu₃Sn and numerous microvoids were formed at the SAC/Cu interfaces after aging, while Cu₃Sn and microvoids were not observed at the SAC/Cu-Zn interfaces. IMC growth on the Cu substrate was controlled by volume diffusion in all conditions. In contrast, IMC growth on Cu-Zn specimens was controlled by interfacial reaction for a short aging time and volume diffusion kinetics for a long aging time. The growth rate of IMCs on Cu-Zn substrates was much slower due to the larger activation energy and the lower layer growth coefficient for the growth of Cu-Sn IMCs. This effect was more prominent at higher aging temperatures.     

A Novel FRFT Beamformer for Rayleigh Faded Channels

A method of optimal beamforming for flat Rayleigh faded channels using the Fractional Fourier Transform (FRFT) is considered in this paper. It has been demonstrated through simulations that optimal beamforming with FRFT allows smaller mean-square errors in restoring signals degraded with linear time-or frequency variant distortions and Additive White Gaussian Noise. This is made possible by the additional flexibility that comes with free parameter ‘a’ of the fractional Fourier transform as oppose to the classical Fourier transform (FT). The method is especially useful in moving source problems, where Doppler Effect produces frequency shift when the source is moving, as in mobile and wireless communication where user produces the frequency shift while moving. In this paper it is shown through simulations that beamforming in fractional domain reduces BER as compared to time or frequency domain.     

Advances In Peer-To-Peer Content Search

Peer-to-peer (P2P) computer networks have recently received tremendous attention due to their inherent scalability and flexibility, which facilitates a broad spectrum of innovative multimedia applications. Such networks rely on the power of participant nodes of the network (called peers) for communications and computation. Traditional applications of P2P multimedia include decentralized file sharing and content distribution. Yet, the value of the virtually unlimited amount of data distributed in the P2P network will be sacrificed if effective and efficient ways to locate the content are missing. This challenge has stimulated extensive research in recent years, and many new P2P content search methods have been proposed. This paper provides a timely review of influential work in the area of peer-to-peer (P2P) content search. We begin with a survey of text-based P2P search mechanisms and continue with an exposition of content-based and semantic-based approaches followed by a discussion of future directions.