Deep-level transient spectroscopy of detector-grade high-resistivity float-zone silicon

In this paper, the application of standard capacitance DLTS to high-resistivity (HR) silicon is investigated both theoretically and experimentally. As will be demonstrated, typical artefacts occur, which are related to the low doping density of the material (order of a few times 10¹¹ to 10¹² cm^-3). The high series resistance of a HR-Si diode gives rise to the so-called Q-effect, yielding a reduction of the DLTS peak amplitude, which is particularly pronounced at room temperature and for p-type material. A second effect is the occurrence of non-negligible re-emission during the filling pulse, which causes the Arrhenius plot to deviate from a straight line and is particularly important for repulsive trapping centres. Methods will be discussed to reduce or correct for these phenomena. They will be illustrated by the practical example of the interstitial Fe donor-level in p-type HR-Si.     

A power-efficient channel coder/decoder chip for GSM terminals

A compact power- and computing-delay-efficient channel codec chip for the Pan-European digital cellular radio (GSM) system is presented. This key component for the hand-portable mobile station, mainly implementing GSM Recommendation 5.03 on a full duplex basis, is accomplished through a dedicated architecture and application tailored memories. An important effort was made to increase the testability of the design; the sequentiality, the low pin count, and the presence of embedded macro functions implied the need for internal scan and BIST techniques. Full scan design and self-test facilities, supported by automatic test pattern generating software, resulted in time- and coverage-efficient testing. The chip is fabricated in a double-metal 1.2-μm CMOS technology, using a cell-based design approach incorporating memory and programmable array macro blocks. A full-rate speech channel block is decoded in less than 1.8 ms and typical average in-system power consumption does not exceed 10 mW     

Synchronization of quadrature-quadrature phase-shift keying signals

The key synchronization aspects in the system design of a QQPSK (quadrature-quadrature phase-shift-keying) modem are addressed. The sensitivity of the data demodulator to synchronization errors is discussed, and contextually the performances of some IF and baseband carrier phase and symbol timing recovery schemes are evaluated both theoretically and by computer simulations. In particular, a fourth-power IF carrier/clock regenerator and two baseband clock recovery schemes, with and without the aid of data decisions, respectively, are taken into account. The analysis shows on the one hand the substantial robustness of QQPSK to carrier phase errors and the adequacy of the examined carrier extraction scheme. On the other hand, the remarkable sensitivity of QQPSK to symbol timing inaccuracy is stressed and the need to resort to the newly proposed decision-aided baseband clock recovery scheme is pointed out     

Transistor oscillator and amplifier grids

Although quasi-optical techniques are applicable to a large variety of solid-state devices, special attention is given to transistors, which are attractive because they can be used as either amplifiers or oscillators. Experimental results for MESFET bar-grid and planar grid oscillators are presented. A MESFET grid amplifier that receives only vertically polarized waves at the input and radiates horizontally polarized waves at the output is discussed. These planar grids can be scaled for operation at millimeter- and submillimeter-wave frequencies. By using modern IC fabrication technology, planar grid oscillators and amplifiers containing thousands of devices can be built, thereby realizing an efficient means for large-scale power combining     

Net Results: The NetView-Based Problem Resolution and Productivity Tool for the VTAM Environment

This article introduces Net Results, a NetView-based full-screen command processor that facilitates SNA Network management.     

Combustion properties of a low-vulnerability propellant: an experimental and theoretical study using laser ignition

Ignition and combustion characteristics of a low-vulnerability propellant based on RDX are studied experimentally. Ignition is obtained using a laser diode. Experiments are performed in a cylindrical closed-volume reactor for different initial pressures and initial propellant masses under nitrogen and argon surrounding atmospheres. Ignition delays, maximal overpressures, and propagation rates are obtained for different initial pressures and laser powers. Thermodynamic predictions of overpressures are also compared with experimental ones. Finally, ignition probabilities for different laser powers and gaseous atmospheres are investigated using a revised Langlie method.     

Waveguide microcavity based on photonic microstructures

A waveguide based microcavity exhibiting a quality factor Q/spl ap/2500 has been realized by incorporating a /spl lambda//4 phase shift into a 1-D photonic microstructure. The microstructure has an overall length of 3 /spl mu/m, consists of a deeply etched grating with very narrow (75 nm) air-gaps and exhibits a third-order stop band in the 800-900 nm wavelength regime. A comparison between measurement and simulation suggests that there is a thin (approximately 18 nm) skin of oxidized material at the etched semiconductor-air interfaces.     

普光3井防斜打直技术

普光3井上部地层属于高陡构造,地层倾角大,极易发生井斜,地层可钻性差,蹩跳钻严重,上部地层防斜打直是施工的难点。该井在施工过程中应用了钟摆钻具组合、大直径钻铤组成的塔式钻具组合和螺杆钻具组合。应 用效果表明,钟摆钻具组合在表层钻进时,要防斜打直要求钻压很小,这样制约了钻井速度;大直径钻铤塔式钻具组合防斜效果较好,且匹配好合适的钻井参数并优选好钻头,能有效提高钻井速度;上螺杆扭方位钻具组合是一种较积极的防斜打直措施,有必要进一步探索。