Solution‐Processed GaSe Nanoflake‐Based Films for Photoelectrochemical Water Splitting and Photoelectrochemical‐Type Photodetectors

Gallium selenide (GaSe) is a layered compound, which has been exploited in nonlinear optical applications and photodetectors due to its anisotropic structure and pseudodirect optical gap. Theoretical studies predict that its 2D form is a potential photocatalyst for water splitting reactions. Herein, the photoelectrochemical (PEC) characterization of GaSe nanoflakes (single‐/few‐layer flakes), produced via liquid phase exfoliation, for hydrogen evolution reaction (HER) and oxygen evolution reaction (OER) in both acidic and alkaline media is reported. In 0.5 m H₂SO₄, the GaSe photoelectrodes display the best PEC performance, corresponding to a ratiometric power‐saved metric for HER (Φ_saved,HER) of 0.09% and a ratiometric power‐saved metric for OER (Φ_saved,OER) of 0.25%. When used as PEC‐type photodetectors, GaSe photoelectrodes show a responsivity of ≈0.16 A W^?1 upon 455 nm illumination at a light intensity of 63.5 µW cm^?2 and applied potential of ?0.3 V versus reversible hydrogen electrode (RHE). Stability tests of GaSe photodetectors demonstrated a durable operation over tens of cathodic linear sweep voltammetry scans in 0.5 m H₂SO₄ for HER. In contrast, degradation of photoelectrodes occurred in both alkaline and anodic operation due to the highly oxidizing environment and O₂‐induced (photo)oxidation effects. The results provide new insight into the PEC properties of GaSe nanoflakes for their exploitation in photoelectrocatalysis, PEC‐type photodetectors, and (bio)sensors.     

Transition‐Metal Dichalcogenide NiTe2: An Ambient‐Stable Material for Catalysis and Nanoelectronics

By means of theory and experiments, the application capability of nickel ditelluride (NiTe₂) transition‐metal dichalcogenide in catalysis and nanoelectronics is assessed. The Te surface termination forms a TeO₂ skin in an oxygen environment. In ambient atmosphere, passivation is achieved in less than 30 min with the TeO₂ skin having a thickness of about 7 Å. NiTe₂ shows outstanding tolerance to CO exposure and stability in water environment, with subsequent good performance in both hydrogen and oxygen evolution reactions. NiTe₂‐based devices consistently demonstrate superb ambient stability over a timescale as long as one month. Specifically, NiTe₂ has been implemented in a device that exhibits both superior performance and environmental stability at frequencies above 40 GHz, with possible applications as a receiver beyond the cutoff frequency of a nanotransistor.     

Layered Video and Differentiated Coding for Adaptive QoS in Mixed Wired-Satellite Networks

Mobile networks are becoming nothing but a way to allow ubiquitous access to multimedia services. To allow efficient use of resources, new systems provide flexible bandwidth and different error protection techniques to match channel behavior. As the backbone network is increasingly becoming based on packet techniques and in particular on IP and related transport protocols, end to end service quality must be analyzed considering both the fixed and the mobile part. Source scalability may help in coping with a mixed and heterogeneous environment. In this work we present some results of a transmission chain comprising a scalable MPEG-2 coder, an IP network and a radio access exploiting the availability of satellites. It is shown that for a given target rate, differentiated coding can be exploited to achieve decodability and good quality at a channel SNR much lower that single layer streams. This revised version was published online in July 2006 with corrections to the Cover Date.     

An Integrated CAD Methodology for Yield Enhancement of VLSI CMOS Circuits Including Statistical Device Variations

In this paper a novel CAD methodology for yield enhancement of VLSI CMOS circuits including random device variations is presented. The methodology is based on a preliminary characterization of the technological process by means of specific test chips for accurate mismatch modeling. To this purpose, a very accurate position-dependent parameter mismatch model has been formulated and extracted. Finally a CAD tool implementing this model has been developed. The tool is fully integrated in an environment of existing commercial tools and it has been experimented in the STMicroelectronics Flash Memory CAD Group.As an example of application, a bandgap reference circuit has been considered and the results obtained from simulations have been compared with experimental data. Furthermore, the methodology has been applied to the read path of a complex Flash Memory produced by STMicroelectronics, consisting of about 16,000 MOSFETs. Measurements of electrical performances have confirmed the validity of the methodology, and the accuracy of both the mismatch model and the simulation flow.     

50-nm Self-Aligned and “Standard” T-gate InP pHEMT Comparison: The Influence of Parasitics on Performance at the 50-nm Node

Continued research into the development of III-V high-electron mobility transistors (HEMTs), specifically the minimization of the device gate length, has yielded the fastest performance reported for any three terminal devices to date. In addition, more recent research has begun to focus on reducing the parasitic device elements such as access resistance and gate fringing capacitance, which become crucial for short gate length device performance maximization. Adopting a self-aligned T-gate architecture is one method used to reduce parasitic device access resistance, but at the cost of increasing parasitic gate fringing capacitances. As the device gate length is then reduced, the benefits of the self-aligned gate process come into question, as at these ultrashort-gate dimensions, the magnitude of the static fringing capacitances will have a greater impact on performance. To better understand the influence of these issues on the dc and RF performance of short gate length InP pHEMTs, the authors present a comparison between In_0.7Ga_0.3As channel 50-nm self-aligned and "standard" T-gate devices. Figures of merit for these devices include transconductance greater than 1.9 S/mm, drive current in the range 1.4 A/mm, and fT up to 490 GHz. Simulation of the parasitic capacitances associated with the self-aligned gate structure then leads a discussion concerning the realistic benefits of incorporating the self-aligned gate process into a sub-50-nm HEMT system     

Vehicle detection by means of stereo vision-based obstacles features extraction and monocular pattern analysis.

This paper presents a stereo vision system for the detection and distance computation of a preceding vehicle. It is divided in two major steps. Initially, a stereo vision-based algorithm is used to extract relevant three-dimensional (3-D) features in the scene, these features are investigated further in order to select the ones that belong to vertical objects only and not to the road or background. These 3-D vertical features are then used as a starting point for preceding vehicle detection; by using a symmetry operator, a match against a simplified model of a rear vehicle's shape is performed using a monocular vision-based approach that allows the identification of a preceding vehicle. In addition, using the 3-D information previously extracted, an accurate distance computation is performed.     

A New Modulation for Intrinsically Secure Radio Channel in Wireless Systems

One of the biggest challenges in RFID (radio frequency identification) large scale deployment, such as in warehouse RFID deployment, is the positioning of RFID reader antennas to efficiently locate all the tagged objects distributed at RFID reader environment. This paper has investigated a novel location sensing system based on geometric grid covering algorithm that can use any passive or active RFID standard for positioning or tracking objects inside buildings. This study involves design of RFID reader antenna network which focuses on placing the reader antennas on a grid to cover all the tags distributed at two dimensional planes and position calculation using statistical averages algorithm. The statistical averages algorithm simply computes the location coordinates of the tagged object by statistical average of the reader antenna’s location. The proposed grid of reader antennas can assist in minimizing the actual number of reader antennas required for RFID large scale deployment. The proposed prototype system is a simpler positioning system which presents the solution of placement pattern of RFID reader antennas, gives less complicated mathematical calculation, and is able to provide a high degree of accuracy. The obtained results show that the proposed location sensing system can achieve better positioning accuracy as compared to existing positioning system and in some cases accuracy improvement of about 50% can be reached.

Probing Defects and Spin-Phonon Coupling in CrSBr via Resonant Raman Scattering

Understanding the stability limitations and defect formation mechanisms in 2D magnets is essential for their utilization in spintronic and memory technologies. Here, defects in mono- to multilayer CrSBr are correlated with structural, vibrational, and magnetic properties. Resonant Raman scattering is used to reveal distinct vibrational defect signatures. In pristine CrSBr, it is shown that bromine atoms mediate vibrational interlayer coupling, allowing for distinguishing between surface and bulk defect modes. Environmental exposure is shown to cause drastic degradation in monolayers, with the formation of intralayer defects. This is in contrast to multilayers that predominantly show bromine surface defects. Through deliberate ion irradiation, the formation of defect modes is tuned: these are strongly polarized and resonantly enhanced, reflecting the quasi--1D electronic character of CrSBr. Strikingly, pronounced signatures of spin-phonon coupling of the intrinsic phonon modes and the ion beam-induced defect modes are observed throughout the magnetic transition temperature. Overall, defect engineering of magnetic properties is possible, with resonant Raman spectroscopy serving as a direct fingerprint of magnetic phases and defects in CrSBr.     

A general battery model for PV system simulation

A battery model is proposed as a tool to simulate and optimize photovoltaic (PV) / storage systems. the normalized form of the equations with respect to the battery capacity allows us to generalize its use for any type and size of lead-acid batteries. The validity of this model to represent the battery voltage evolution during charge, overcharge and discharge processes and to predict the performance of solar systems under different operational conditions is analysed. Moreover, the battery efficiency losses are presented as a function of the upper regulation thresholds of the charge controllers and the size of the array and storage systems in a domestic application in the climate of Madrid.