An approach to the generalized nurse scheduling problem--generation of a declarative program to represent institution-specific knowledge.

An approach to the nurse scheduling problem is presented. The critical problem in nurse scheduling in a hospital is how to determine the day-to-day shift assignments of each nurse for a specified period in a way that satisfies the given requirements as much as possible, where the requirements differ greatly depending on the hospital. We present a method for constructing an agency-independent core procedure which can be tailored to the peculiar requirements of an individual hospital. As a basis, a formal analysis of the problem was performed, and a general scheduling procedure was established. Based on the method, a software system which produces a scheduling program for a given institution was developed. A declarative program that represents institution-specific information is generated through an interview with the user and incorporated into the general procedure. Some of the programming technicalities and an application of the system are also presented.     

Dissolution of phase-separated domains after a jump to a temperature in the single-phase region

Phase-separated domains prepared in the two-phase region were dissolved at a temperature in the single-phase region, and their dissolution dynamics was studied by using the time-resolved light scattering (TRLS) technique and a scanning electron microscope (SEM). The time t_ps of preparation of domains was chosen to be long enough for phase separation to proceed into the late stage. The scattered light intensity at small wavenumbers increased before it attenuated. As t_ps increased, the increase at smaller wavenumbers became more significant and the peak intensity decreased only slightly with dissolution time. The characteristic wavenumber q_m evaluated from TRLS and SEM followed the power-law relation q_mt^−0.3.     

Furnace grown gate oxynitride using nitric oxide (NO)

Gate oxynitride was grown in NO for the first time. This approach can provide a tight N accumulation near the Si/SiO₂ interface. Much lower thermal budget is required for an NO process than for an N₂O process to produce an oxynitride with useful properties. Submicron MOSFET's with NO oxynitride showed superior current drive characteristics and comparable hot carrier immunity to those with N₂O oxynitride     

Surface Hardening of Carbon Steel Using High Powered YAG Laser

A high powered YAG laser with kaleidoscope for surface modification was applied to the surface hardening of carbon steels containing 0. 18-0.54 wt% C without the absorbents, and the relationships between laser processing and surface hardening were investigated by hardness and microstructure. The structure of the hardened zone underwent complete martensitic transformation in all of the carbon steels tested, and its hardness increased with greater carbon content. Under identical irradiated conditions, the hardened zone expanded with increasing carbon content. A hardened zone extending from the surface to a depth of 1.0 mm was obtained at a laser power of 1.0 kW and a scanning speed of 1 mm/sec. It was found that in the surface hardening of carbon steels, a high powered YAG laser can be used to control the hardened zone by selecting the appropriate irradiation conditions, however, the hardened zone was affected by the assistant gas and the flow rate.     

Improvements of the T-Ω method for 3-D eddy currentanalysis

An improved T-Ω method that can analyze magnetic fields produced not only by eddy currents but also by magnetizing currents is proposed. The method is applied to the analysis of 3-D eddy-current models with holes. The usefulness of the method is investigated by comparing calculated results with measured results and with results obtained by the A-Φ method. The T-Ω method has the advantage that the CPU time can be considerably reduced when most of the analyzed region is current-free and the eddy current flows two-dimensionally. The method is especially effective when the shape of the winding is simple and the distribution of magnetizing current is known beforehand. It is not effective when most of the analyzed region is current-carrying     

Characterization of C-S-H from Highly Reactive β-Dicalcium Silicate Prepared from Hillebrandite

β-dicalcium silicate synthesized by thermal dissociation of hydrothermally prepared hillebrandite (Ca₂(SiO₃)(OH)₂) exhibits extremely high hydration activity. Characterization of the hydrates obtained and investigation of the hydration mechanism was carried out with the aid of trimethylsilylation analysis, ²⁹Si magic angle spinning nuclear magnetic resonance, transmission electron microscopy selected area electron diffraction, and XRD. The silicate anion structure of C-S-H consisted mainly of a dimer and a single-chain polymer. Polymerization advances with increasing curing temperature and curing time. The C-S-H has an oriented fibrous structure and exhibits a 0.73-nm dreierketten in the longitudinal direction. On heating, the C-S-H dissociates to form β-C₂S. The temperature at which βC₂S begins to form decreases with increasing chain length of the C-S-H or as the Ca/Si ratio becomes higher. The high activity of β-C₂S is due to its large specific surface area and the fact that the hydration is chemical-reaction-rate-controlled until its completion. As a result, the hydration progresses in situ and C-S-H with a high Ca/Si ratio is formed.     

Optical bistability and set-reset operation of a Fabry-Perotsemiconductor laser amplifier with two detuned light injections

Optical bistability in a Fabry-Perot semiconductor laser amplifier when two optical inputs detuned from the resonant wavelength of a semiconductor laser amplifier are injected is discussed. A split branch is found in the optical output versus input characteristics in addition to conventional optical bistability behavior. It is shown analytically and experimentally that set and reset can be achieved in the optical output of the semiconductor laser amplifier for each wavelength by applying two detuned optical pulses and using the split branch     

A 64-Mb DRAM with meshed power line

A 64-Mb dynamic RAM (DRAM) has been developed with a meshed power line (MPL) and a quasi-distributed sense-amplifier driver (qDSAD) scheme. It realizes high speed, t_RAS=50 ns (typical) at V_cc=3.3 V, and 16-b input/output (I/O). This MPL+qDSAD scheme can reduce sensing delay caused by the metal layer resistance. Furthermore, to suppress crosstalk noise, a V_SS shield peripheral layout scheme has been introduced, which also widens power line widths. This 64-Mb DRAM was fabricated with 0.4-μm CMOS technology using KrF excimer laser lithography. A newly developed memory cell structure, the tunnel-shaped stacked-capacitor cell (TSSC), was adapted to this 64-Mb DRAM     

A 10 bit 20 MS/s 3 V supply CMOS A/D converter

A 10 bit CMOS A/D converter with 3 V power supply has been developed for being integrated into system VLSI's. In this A/D converter, redundant binary encoders named “twin encoders” enhance tolerance to substrate noise, together with employing differential amplifiers in comparators. The bias circuit using a replica of the amplifier is developed for biasing differential comparators with 3 V power supply. Subranging architecture along with a multilevel tree decoding structure improves dynamic performance of the ADC at 3 V power supply. The A/D converter is fabricated in double-polysilicon, double-metal, 0.8 μm CMOS technology. The experimental results show that the ADC operates at 20 MS/s and the twin encoders suppress the influence of substrate noise effectively. This ADC has a single power supply of 3 V, and dissipates 135 mW at 20 MS/s operation