寒地大学校园环境要素与冬季体力活动相关性

为探究促进冬季体力活动的寒地大学校园环境设计依据,基于循证设计理论和社会生态学模型在中国东北地区9座大学校园年内进行了问卷调查,用实证方法探究了寒地大学校园的建成、气候及感知环境要素对学生冬季体力活动频率和水平的影响.通过描述性统计横向对比了学生冬季与非冬季月份的体力活动模式及各个校园的主观评价得分;并通过多重线性回归分析探求了校园环境要素对冬季体力活动的影响.统计结果表明:学生在冬季月份进行体力活动的频率和总量低于非冬季月份;校园冬季环境质量低于非冬季月份,且设施防寒、步行可达性、交通安全性、冬季活动安全性得分较低;在冬季,目的地多样性、公共交通选择多样性、道路交通网络连通性、步行道路环境品质、辅助设施存在性、犯罪安全性与交通性体力活动正相关,冰雪危害和空气污染与交通性体力活动负相关;校园环境与冬季休闲性活动无相关关系.利用上述数据可以初步推测促进体力活动的寒地大学校园环境设计倾向并对各个环境要素的重要程度进行评级,重要程度较高的要素是校内目的地、步行道路、犯罪安全性、步行辅助设施和校园公共交通服务.     

A review on solar still: a simple desalination technology to obtain potable water

Present review paper presents an overall summarised presentational view of the research work to be discussed on the solar still. The current review paper also includes the infused crisis and struggle for obtaining fresh water for drinking purpose and consumption for other household activities which are a result of the ecological imbalance that has prevailed and is in continuation for past many centuries. It also shows the various tested and applied techniques for freshwater production and their suitability in the usability context in the present scenario of the scarcity of clean water. The use of solar desalination technology is discussed elaborately for a broader consumption to be employed in the current and future works.     

An investigation of the electrical transport properties of graphene-oxide thin films

The electrical transport properties of graphene-oxide (GO) thin films were investigated. The GO was synthesized by a modified Hummers method and was characterized by X-ray diffraction and UV-visible spectroscopy. The thin film of GO was made on a Si/SiO₂ substrate by drop-casting. The surface morphology of the GO film was analyzed by using scanning electron microscopy and atomic force microscopy techniques. Temperature dependent resistance and current-voltage measurements were studied using four-terminal method at various temperatures (120, 150, 175, 200, 250 and 300 K) and their charge transport followed the 3D variable range hopping mechanism which was well supported by Raman spectra analysis. The presence of various functional groups in GO were identified by using high resolution X-ray photo electron (XPS) and Fourier transform infra red (FT-IR) spectroscopic techniques. Graphene-oxide thin film field effect transistor devices show p-type semiconducting behavior with a hole mobility of 0.25 cm² V⁻¹ s⁻¹ and 0.59 cm² V⁻¹ s⁻¹ when measured in air and vacuum respectively.     

Suppression of defect level emissions in low temperature fabricated one-dimensional Mn doped ZnO nanorods

One-dimensional Mn doped ZnO nanocrystallites were synthesized through a facile low temperature surfactant free chemical route. The crystallite structure and morphological evolution of the particles were revealed to be of wurtzite phase and rod like structures from the X-ray diffraction and transmission electron microscopic analysis, respectively. Using Raman spectroscopy the role of oxygen related defects and phase purity in the Mn substituted ZnO systems were studied systematically. A significant suppression in the sub-band edge emission was visualized in the room temperature emission spectra of the Mn doped systems. The intensity ratio in between the near-band edge and defect-level emissions was observed to increase, signifying the reduction in oxygen related defects and revealing their influence on the crystallinity on the Mn substituted ZnO species. These variations were correlated with the increasing number of Mn ions in the host lattice, which results with their passivating action on the surface defects.     

Colloidal synthesis of Gd<Superscript>3+</Superscript> doped ZrO<Subscript>2</Subscript> based dielectrics and their structural and electrochemical property studies

Solution processed wide band gap dielectrics have nowadays started to receive renewed interest for practical application in semiconductor electronics. In this regard, undoped and gadolinium (Gd) doped zirconia (ZrO₂) nanocrystallites were colloidally processed and their potential for dielectric applications has been demonstrated. X-ray diffraction measurements revealed the effective crystallization of nanostructures and the successful substitution of Gd ions into the cubic ZrO₂ matrix. The particulate-like characteristics of undoped and Gd doped ZrO₂ nanostructures were examined through the electron microscopes, which hardly revealed any difference among them. The optical band gap of ZrO₂ nanostructures was determined to be around 4.64–4.80 eV from the absorbance measurements. The potential of Gd doped ZrO₂ nanostructures for dielectric functions were evaluated through electrochemical impedance spectroscopic measurements. The improved capacitance values estimated from the Nyquist plots suggests the potential of the investigated materials for low power and low voltage electronic applications.