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71.
Le Pocher H. Leung V.C.M. Gillies D.W. 《Selected Areas in Communications, IEEE Journal on》1999,17(1):51-62
A transmission and multiplexing strategy appropriate for voice over asynchronous transfer mode (ATM), called delayed frame queueing (DFQ), is proposed. This frame-based strategy has features in common with the synchronous transfer mode and is thus well suited to service synchronous applications such as voice, while retaining the statistical multiplexing capabilities of ATM. In particular, the DFQ service discipline can provide explicit and nontrivial bounds for queue delay and jitter, for both bursty as well as continuous traffic streams. Furthermore, the DFQ discipline can combine a wide range of delay and jitter bounds while also managing the distribution of quality of service violations among the traffic streams when congestion occurs. Jitter control is performed at the network periphery and thus does not negatively influence multiplexing gain at intermediate nodes. This efficient strategy has major implications in terms of the preferred alternatives chosen by clients when implementing source clock recovery for voice. DFQ allows the entire range of implementation alternatives for voice over ATM to be appropriately serviced, such as ATM adaptation layer types 1 and 2 (AAL1/2), adaptive playout, and immediate playout 相似文献
72.
A two-channel simultaneous transmission is experimented using direct coupling between a vertical-cavity surface-emitting laser (VCSEL) array and a novel 2×2 core optical fiber. No crosstalk is observed. Coupling efficiency and mechanical tolerance are good enough to envisage system applications 相似文献
73.
74.
A low-voltage, micro-power, low-noise, high-gain, high-output swing current mirror-based operational transconductance amplifier (OTA) is presented. The proposed OTA achieves high DC gain and output swing by the adoption of gain boosted current mirroring and self-cascoding techniques. From the simulation, the proposed OTA implemented on a 0.18 μm CMOS shows the DC gain up to 90 dB with a gain bandwidth of 700 KHz for a load capacitor of 1 pF and an output voltage swing of 600 mV. The OTA dissipates only 750 nW from 1.0 V supply. 相似文献
75.
In this paper,Lp-ofdm is combined with differentMimo schemes in order to improve performance in terms of diversity gain and to exploit capacity brought by theMimo channel. The original contribution is the development of a generic iterative receiver designed forLp mimo transmission able to work whatever the antenna configuration and the spatial coding scheme. By using a globalMmse criterion, interference terms coming from space-time coding and linear precoding are jointly treated leading to a very good trade-off between performance and complexity compared to trellis based detectors particularly for high order modulations, high number of antennas and/or large size of precoding matrices. 相似文献
76.
Le H.M. Shih Y.-C. Hwang V.D. Chi T.Y. Kasel K.J. Wang D.C. 《Solid-State Circuits, IEEE Journal of》1991,26(10):1383-1389
Describes the design principles and measured performance of an X -band high-efficiency monolithic-microwave-integrated-circuit (MMIC) power amplifier and discuss pertinent factors of the ion-implantation process. Also presented is a worst-case power prediction of the chip performance and a large-signal design using small-signal simulation. This balanced amplifier is fully monolithic with input and output return losses of better than 20 dB provided by Lange couplers. These return losses make it very convenient to cascade with other components. For high-efficiency operation, the drain voltage is 6 V. Across the 40% bandwidth from 8 to 12 GHz, the amplifier produces 1.6 to 2.1 W of output power at 33 to 40% power-added efficiency. For high-power operation, the drain voltage is 8.5 V. The amplifier can produce 2.4 to 2.8 W of output power at 26 to 29% power-added efficiency across the same 40% bandwidth 相似文献
77.
78.
在铝阳极氧化多层基板内用RF反应溅射制备了埋置型Ta-N薄膜电阻,研究了铝阳极氧化过程对Ta-N薄膜电阻和显微结构的影响.实验结果表明:Ta-N薄膜受上层多孔氧化铝膜影响在表层形成了由Ta2O5和Ta-O-N组成的氧化物凸起绝缘层,氧化物凸起层厚度与氧化电压有关.底层Ta-N薄膜电阻率和电阻温度系数基本保持不变,表层氧化凸起使电阻稳定性增加. 相似文献
79.
80.
Menglei Yuan Qiongguang Li Jingxian Zhang Jiawen Wu Tongkun Zhao Zhanjun Liu Le Zhou Hongyan He Bin Li Guangjin Zhang 《Advanced functional materials》2020,30(39)
Efficient N2 fixation at ambient condition through electrochemical processes has been regarded as a promising alternative to traditional Haber–Bosch technology. Engineering surface atomic architecture of the catalysts to generate desirable active sites is important to facilitate electrochemical nitrogen reduction reaction (NRR) while suppressing the competitive hydrogen evolution reaction. Herein, nickel telluride nanocrystals with selectively exposed {001} and {010} facets are synthesized by a simple process, realizing the manipulation of surface chemistry at the atomic level. It is found that the catalysts expose the {001} facets coupled with desirable Ni sites, which possess high Faraday efficiency of 17.38 ± 0.36% and NH3 yield rate of 33.34 ± 0.70 μg h?1 mg?1 at ‐0.1 V vs RHE, outperforming other samples enclosed by {010} facets (8.56 ± 0.22%, 12.78 ± 0.43 μg h?1 mg?1). Both experimental results and computational simulations reveal that {001} facets, with selectively exposed Ni sites, guarantee the adsorption and activation of N2 and weaken the binding for *H species. Moreover, the enhanced reduction capacity and accelerated charge transfer kinetics also contribute the superior NRR performance of {001} facets. This work presents a novel strategy in designing nonprecious NRR electrocatalyst with exposed favorable active sites. 相似文献