首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   433684篇
  免费   5103篇
  国内免费   1330篇
电工技术   8041篇
综合类   467篇
化学工业   64159篇
金属工艺   19000篇
机械仪表   14153篇
建筑科学   9557篇
矿业工程   2986篇
能源动力   10378篇
轻工业   33481篇
水利工程   5104篇
石油天然气   10511篇
武器工业   87篇
无线电   51681篇
一般工业技术   88002篇
冶金工业   76395篇
原子能技术   10867篇
自动化技术   35248篇
  2021年   3729篇
  2019年   3632篇
  2018年   6434篇
  2017年   6547篇
  2016年   6945篇
  2015年   4177篇
  2014年   7103篇
  2013年   18616篇
  2012年   11239篇
  2011年   14861篇
  2010年   11818篇
  2009年   13255篇
  2008年   14059篇
  2007年   13922篇
  2006年   12356篇
  2005年   11296篇
  2004年   10697篇
  2003年   10497篇
  2002年   10021篇
  2001年   10152篇
  2000年   9585篇
  1999年   9780篇
  1998年   23126篇
  1997年   16485篇
  1996年   12875篇
  1995年   9981篇
  1994年   8801篇
  1993年   8931篇
  1992年   7091篇
  1991年   6749篇
  1990年   6509篇
  1989年   6229篇
  1988年   6082篇
  1987年   5319篇
  1986年   5313篇
  1985年   6068篇
  1984年   5684篇
  1983年   5241篇
  1982年   4844篇
  1981年   4901篇
  1980年   4783篇
  1979年   4692篇
  1978年   4558篇
  1977年   5060篇
  1976年   6060篇
  1975年   4186篇
  1974年   4086篇
  1973年   4187篇
  1972年   3482篇
  1971年   3218篇
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
11.
Presented here are details of the development of a novel membrane integrated circuit (IC) probe card structure based on microsystems technology. The device design allows probing of both solder bumps and pads. A self-limiting sensor was integrated to prolong device lifetime. Comparison with and discussion of the use of modelling is made. Possible enhancements to the probing structure are discussed to improve alignment and measurements. Also shown is data using our microsystems probe card to access a simple IC device. Our device has a contact resistance of less than 0.5 Ω for a force of 0.004 N. A method to implement our probing structure for commercial application and the potential developments which can be made to improve its ease of use are then discussed.  相似文献   
12.
The Magnitogorsk Metallurgical Combine has conducted a study of the effect of technological factors on the hydrogen content of chromium-nickel-molybdenum steel after vacuum degassing. It was established that the most important factor is the hydrogen content of the steel before the degassing operation. The study also determined the effects of the circulation coefficient, the duration of the degassing operation, and the vacuum used in the treatment. __________ Translated from Metallurg, No. 7, pp. 68–69, July, 2006.  相似文献   
13.
Note on B-splines, wavelet scaling functions, and Gabor frames   总被引:3,自引:0,他引:3  
Let g be a continuous, compactly supported function on such that the integer translates of g constitute a partition of unity. We show that the Gabor system (g,a,b), with window g and time-shift and frequency-shift parameters a,b>0 has no lower frame bound larger than 0 if b=2,3,... and a>0. In particular, (g,a,b) is not a Gabor frame if g is a continuous, compactly supported wavelet scaling function and if b=2,3,... and a>0. We give an example for our result for the case that g=B/sub 1/, the triangle function supported by [-1,1], by showing pictures of the canonical dual corresponding to (g,a,b) where ab=1/4 and b crosses the lines N=2,3,.  相似文献   
14.
Supported metal catalysts, particularly noble metals supported on SiO2, have attracted considerable attention due to the importance of the silica–metal interface in heterogeneous catalysis and in electronic device fabrication. Several important issues, e.g., the stability of the metal–oxide interface at working temperatures and pressures, are not well-understood. In this review, the present status of our understanding of the metal–silica interface is reviewed. Recent results of model studies in our laboratories on Pd/SiO2/Mo(1 1 2) using LEED, AES and STM are reported. In this work, epitaxial, ultrathin, well-ordered SiO2 films were grown on a Mo(1 1 2) substrate to circumvent complications that frequently arise from the silica–silicon interface present in silica thin films grown on silicon.  相似文献   
15.
Performance study of iSCSI-based storage subsystems   总被引:9,自引:0,他引:9  
iISCSI is emerging as an end-to-end protocol for transporting storage I/O block data over IP networks. By exploiting the ubiquitous Internet infrastructure, iSCSI greatly facilitates remote storage, remote backup, and data mirroring. This article evaluates the performance of two typical iSCSI storage subsystems by measuring and analyzing block-level I/O access performance and file-level access performance. In the file-level performance study, we compare file access performance in an NAS scheme with that in an iSCSI-based SAN scheme. Our test results show that Gigabit Ethernet-based iSCSI can reach very high bandwidth, close to that of a direct FC disk access in block I/O access. However, when the iSCSI traverses through longer distance, throughput relies heavily on the available bandwidth between the initiator and the target. On the other hand, the file-level performance shows that iSCSI-based file access (SAN scheme) provides higher performance than using NFS protocol in Linux and SMB protocol in Windows (NAS scheme). However, the advantage of using iSCSI-based file accesses decreases as the file size increases. The obtained experimental results shed some light on the performance of applications based on iSCSI storage.  相似文献   
16.
The basic methods of verifying continuous automatic belt weighers are described. A comparative analysis of these methods on the basis of experimental studies is made and ways of implementing the results in industry are recommended.  相似文献   
17.
Rheological properties of MR fluids under large step strain shear are presented in this paper. The experiments were carried out using a rheometer with parallel-plate geometry. Under the large step strain shear, MR fluids behave as nonlinear viscoelastic properties, where the stress relaxation modulus, G(tγ), shows a decreasing trend with step strain. The experimental results indicate that G(tγ) obeys time-strain separability. Thus, a mathematical form based on finite exponential serials is proposed to predict MR behavior. In this model, G(tγ) is represented as the product of a linear stress relaxation, G(t), and the damping function, h(γ), i.e. G(tγ)=G(t) h(γ). G(t) is simply represented as a three-parameter exponential serial and h(γ) has a sigmoidal form with two parameters. The parameters are identified by adopting an efficient optimization method proposed by Stango et al. The comparison between the experimental results and the model-predicted values indicates that this mathematical model can accurately predict MR behavior.  相似文献   
18.
Using Java-based tools in multimedia collaborative environments accessed over the Internet can increase an application's client base. Most operating systems support Java, and its "compile once-run everywhere" architecture is easy to maintain and update. The Java-based tools presented here let users share Internet resources, including resources originally designed for single use.  相似文献   
19.
Deposition of Ag films by direct liquid injection-metal organic chemical vapor deposition (DLI-MOCVD) was chosen because this preparation method allows precise control of precursor flow and prevents early decomposition of the precursor as compared to the bubbler-delivery. Silver(I)-2,2-dimethyl-6,6,7,7,8,8,8-heptafluoro-3,5-octanedionato-triethylphosphine [Ag(fod)(PEt3)] as the precursor for Ag CVD was studied, which is liquid at 30 °C. Ag films were grown on different substrates of SiO2/Si and TiN/Si. Argon and nitrogen/hydrogen carrier gas was used in a cold wall reactor at a pressure of 50–500 Pa with deposition temperature ranging between 220 °C and 350 °C. Ag films deposited on a TiN/Si diffusion barrier layer have favorable properties over films deposited on SiO2/Si substrate. At lower temperature (220 °C), film growth is essentially reaction-limited on SiO2 substrate. Significant dependence of the surface morphology on the deposition conditions exists in our experiments. According to XPS analysis pure Ag films are deposited by DLI-MOCVD at 250 °C by using argon as carrier gas.  相似文献   
20.
The effect of crystal orientation on the photogeneration of free charge carriers was studied for C60 single crystals in a weak magnetic field. The photoconductivity sharply depends on the orientation of magnetic field with respect to the crystallographic directions, showing a 5–8% increase for seven axes of the C60 crystal.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号