On the construction of the reachability domain in one nonlinear problem

An algorithm for construction of the reachability domain by the given time instant ? for a nonlinear third order system under the condition of preliminary approach to a predefined point is proposed. All possible cases of location of this point in the motion plane of the system for different values of the time instant ? are studied.     

Advanced Method for Single Crystal Casting of Turbine Blades for Gas Turbine Engines and Plants

A method for fabricating single crystal blades that combines the techniques of seed crystals and selection is suggested. The method realizes the advantages of both techniques, i.e., the high structural perfection and the possibility of fabricating single crystals with specified spatial orientation. Metallographic and x-ray diffraction analyses are used to study the processes of nucleation of the single crystal structure of blade castings fabricated from high-temperature nickel alloys by the method of selection and seed crystals. A commercial process for fabricating cast single crystal turbine blades by the new method is suggested.     

An expert diagnostic system for the MACRO experiment at the GranSasso Laboratory

The maintenance of the MACRO (a Monopoles, Astrophysics and Cosmic Ray Observatory), a large-area detector that will be used to search for rare constituents or phenomena in cosmic radiation penetrating deep underground, is addressed. A real-time expert system for diagnosing detector and data acquisition system anomalies, which is based on the NEXPERT commercial tool, is described. It performs online diagnosis and, if an abnormal condition is identified, takes the appropriate action to reduce the unavailability of the apparatus. The data acquisition system is CAMAC-based, and the sensor modules, which gather the significant values for diagnosis, are implemented in the VME crate     

Performance engineering and topological design of metro WDM opticalnetworks using computer simulation

This paper demonstrates the use of computer simulation for topological design and performance engineering of transparent wavelength-division multiplexing metropolitan-area networks. Engineering of these networks involves the study of various transport-layer impairments such as amplifier noise, component ripple, chirp/dispersion, optical crosstalk, waveform distortion due to filter concatenation, fiber nonlinearities, and polarization effects. A computer simulation methodology composed of three main simulation steps is derived and implemented. This methodology obtains performance estimations by applying efficient wavelength-domain simulations on the entire network topology, followed by time-/frequency-domain simulations on selected paths of the network and finally Q-budgeting on an identified worst case path. The above technique provides an efficient tool for topological design and network performance engineering. Accurate simulation models are presented for each of the performance impairments, and the computer simulation methodology is used for the design and engineering of a number of actual metro network architectures     

Systematic characterization of Cl2 reactive ion etchingfor improved ohmics in AlGaN/GaN HEMTs

Pre-metal-deposition reactive ion etching (RIE) was performed on an Al_0.3Ga_0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs     

A concise process technology for 3-D suspended radio frequency micro-inductors on silicon substrate

In this letter, a concise process technology is proposed for the first time to enable the fabrication of good quality three-dimensional (3-D) suspended radio frequency (RF) micro-inductors on bulk silicon, without utilizing the lithography process on sidewall and trench-bottom patterning. Samples were fabricated to demonstrate the applicability of the proposed process technology.     

Mode coupling contribution to radiation losses in curvatures for high and low numerical aperture plastic optical fibers

We have studied the optical power losses due to multiple curvatures in polymethylmetacrylate (PMMA) plastic optical fibers (POFs) of different numerical apertures (NAs) and attenuation. The fibers were tested for several configurations in order to assess the influence of different types of curved-to-straight fiber transitions in the amount of power radiation. We found that losses are below the standards for all tested fiber types, and thus, they are a suitable choice for local area network (LAN) applications. In addition, our results revealed the presence of modal interactions as confirmed using an experimental procedure to estimate the mode coupling strength for the same fibers.