Singlet oxygen generator based on the reaction of chlorine with filament-guided jets of basic hydrogen peroxide

The chlorine utilization efficiency and singlet oxygen concentration are determined as functions of the chlorine flow rate, the base concentration, and the flow rate and temperature of basic hydrogen peroxide in a singlet oxygen generator based on the reaction of chlorine with filament-guided descending basic hydrogen peroxide jets. The effluent gas, without aerosol entrainment, contains about 10% residual chlorine and more than 60% singlet oxygen.     

The Effect of the Method by Which a High-Resistivity GaN Buffer Layer Is Formed on Properties of InAlN/GaN and AlGaN/GaN Heterostructures with 2D Electron Gas

AlGaN/AlN/GaN and InAlN/AlN/GaN structures with 2D electron gas have been grown on sapphire substrates by metal-organic vapor-phase epitaxy. The suppression of the parasitic conductivity of buffer GaN layers was provided either by intentionally raising the density of edge dislocations or by doping with iron (GaN:Fe). It was shown that using GaN buffer layers with a better crystal perfection and more planar surface results in the electron mobility in the 2D channel for carriers becoming 1.2–1.5 times higher.     

GaN grown by hydride vapor phase epitaxy on p-type 6H-SiC layers

6H-SiC/GaN pn-heterostructures were grown by subsequent epitaxial growth of p-SiC by low temperature liquid phase epitaxy (LTLPE) and n-GaN by hydride vapor phase epitaxy (HVPE). For the first time, p-type epitaxial layers grown on 6H-SiC wafers were used as substrates for GaN HVPE growth. The GaN layers exhibit high crystal quality which was determined by x-ray diffraction. The full width at a half maximum (FWHM) for the ω-scan rocking curve for (0002) GaN reflection was ∼120 arcsec. The photoluminescence spectra for these films were dominated by band-edge emission. The FWHM of the edge PL peak at 361 nm was about 5 nm (80K).     

Relaxation in a low-permeability porous material

Relaxation in low-permeability porous materials has been examined for nonstationary infiltration.Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 58, No. 1, pp. 78–82, January, 1990.     

The influence of molecular structure modification on the photoluminescence and optical absorption of thin copper phthalocyanine films in the near-IR range

We have studied the luminescence and optical absorption of thin films of copper phthalocyanine (CuPc) with a modified molecular structure of the peripheral fragments. The coefficient of absorption in the near-IR and visible range (absorption by defects) and the photoluminescence spectra exhibit correlated changes depending on the modification of the CuPc structure.     

Sensor Selective Gas Analyzer for Small Concentrations of Hydrogen Sulfide

A sensor (based on a MDS-capacitor) gas analyzer for hydrogen sulfide concentration in the range 5–200 ppb at the level of the limiting permissible concentration for a health zone is suggested. The gas analyzer is selective with respect to hydrogen sulfide.