Bounded Tamper Resilience: How to Go Beyond the Algebraic Barrier

Related key attacks (RKAs) are powerful cryptanalytic attacks where an adversary can change the secret key and observe the effect of such changes at the output. The state of the art in RKA security protects against an a-priori unbounded number of certain algebraic induced key relations, e.g., affine functions or polynomials of bounded degree. In this work, we show that it is possible to go beyond the algebraic barrier and achieve security against arbitrary key relations, by restricting the number of tampering queries the adversary is allowed to ask for. The latter restriction is necessary in case of arbitrary key relations, as otherwise a generic attack of Gennaro et al. (TCC 2004) shows how to recover the key of almost any cryptographic primitive. We describe our contributions in more detail below. (1) We show that standard ID and signature schemes constructed from a large class of \(\Sigma \)-protocols (including the Okamoto scheme, for instance) are secure even if the adversary can arbitrarily tamper with the prover’s state a bounded number of times and obtain some bounded amount of leakage. Interestingly, for the Okamoto scheme we can allow also independent tampering with the public parameters. (2) We show a bounded tamper and leakage resilient CCA-secure public key cryptosystem based on the DDH assumption. We first define a weaker CCA-like security notion that we can instantiate based on DDH, and then we give a general compiler that yields CCA security with tamper and leakage resilience. This requires a public tamper-proof common reference string. (3) Finally, we explain how to boost bounded tampering and leakage resilience [as in (1) and (2) above] to continuous tampering and leakage resilience, in the so-called floppy model where each user has a personal hardware token (containing leak- and tamper-free information) which can be used to refresh the secret key. We believe that bounded tampering is a meaningful and interesting alternative to avoid known impossibility results and can provide important insights into the security of existing standard cryptographic schemes.     

Random waypoint mobility model in cellular networks

In this paper we study the so-called random waypoint (RWP) mobility model in the context of cellular networks. In the RWP model the nodes, i.e., mobile users, move along a zigzag path consisting of straight legs from one waypoint to the next. Each waypoint is assumed to be drawn from the uniform distribution over the given convex domain. In this paper we characterise the key performance measures, mean handover rate and mean sojourn time from the point of view of an arbitrary cell, as well as the mean handover rate in the network. To this end, we present an exact analytical formula for the mean arrival rate across an arbitrary curve. This result together with the pdf of the node location, allows us to compute all other interesting measures. The results are illustrated by several numerical examples. For instance, as a straightforward application of these results one can easily adjust the model parameters in a simulation so that the scenario matches well with, e.g., the measured sojourn times in a cell.     

A New Design Concept for High-Performance Fading Channel Simulators Using Set Partitioning

In this paper, we introduce a new technique for the design of high-performance Rayleigh fading channel simulators. The proposed design method uses set partitioning – a technique, which plays a key role in the design of trellis-coded modulation schemes. We show how set partitioning can be used to design multiple uncorrelated fading waveforms enabling the simulation of Rayleigh fading channels. For the important case of isotropic scattering, we show that the sample average of the generated waveforms results in a deterministic process, the autocorrelation function (ACF) of which tends to the zeroth-order Bessel function of the first kind as the number of sample functions increases. The proposed procedure is completely deterministic. The comparison with a stochastic procedure using Monte Carlo techniques will be made. A study of the performance shows clearly that the new technique using set partitioning outperforms by far existing Monte Carlo methods.     

The novel communication algorithm and the throughput analysis for wireless sensor networks

Aiming at the significance of the energy controls of wireless sensor networks, an economical energy consumption algorithm for wireless communicating in Wireless Sensor Networks (WSN) is presented. Based on the algorithm, the maximal system throughput of WSN is analyzed, and the upper bound of throughput of WSN is proposed and proved. Some numerical simulations are conducted and analyzed. The conclusions include that the transmitting radius of sensor node and the parameters of the energy cost function have significant influence upon the throughput, but the monitoring region radius has little influence. For the same transmitting distance, the more the hopping of information trans- mitting, the better the throughput of WSN. On the other hand, for the energy optimization of the whole WSN, the trade-off problem between the throughput capacity and the relay nodes is proposed, and the specific expression of relay hops that minimized the energy consumptions and the maximal throughput of WSN under the specific situation is derived.     

New Criteria of Robust $$H_\infty $$ Stability for Fuzzy Mixed-Delay Systems with Nonlinear Noise Disturbances

This paper investigates new criteria of the robust \(H_\infty \) stability for a class of uncertain stochastic fuzzy mixed-delay systems with nonlinear noise disturbances by employing an improved free-weighting matrix approach. The fuzzy system is based on the Takagi–Sugeno model that is often used to represent the complex nonlinear systems in terms of fuzzy sets and fuzzy reasoning. To reflect more realistic dynamical behaviors of the system, both the parameter uncertainties and stochastic disturbances are considered, the stochastic disturbances are given in the form of a Brownian motion. The mixed delays comprise both discrete and distributed time-varying delays. In terms of a stochastic fuzzy Lyapunov functional, a sufficient criterion is proposed to investigate dynamical behaviors of the system in the mean-square sense with an \(H_\infty \) performance index.     

A Novel Approach for Diagnosis of Analog Circuit Fault by Using GMKL-SVM and PSO

This paper presents a novel analog circuit fault diagnosis approach using generalized multiple kernel learning-support vector machine (GMKL-SVM) method and particle swarm optimization (PSO) algorithm. First, the wavelet coefficients’ energies of impulse responses are generated as features. Then, a diagnosis model is constructed by using GMKL-SVM method based on features. Meanwhile, the PSO algorithm yields parameters for the GMKL-SVM method. Sallen-Key bandpass filter and two-stage four-op-amp biquad lowpass filter fault diagnosis simulations are given to demonstrate the proposed diagnose procedure, and the comparison simulations reveal that the proposed approach has higher diagnosis precision than the referenced methods.     

Wetting interaction between Sn-Zn-Ag solders and Cu

The wetting interaction of Sn-(7.1–9)Zn-(0–3)Ag solders with Cu was investigated from 230°C to 300°C. The wetting time, wetting forces, and activation energy of the wetting reaction were studied. The wetting time decreases with increasing temperature and increases with Ag content. The wetting force exhibits a disproportional correlation to temperature rise, while no trend was observed with respect to Ag content. The wetting behavior was ascribed to the interaction between Cu and Zn. The AgZn₃ compound was formed at the interface when the solder contains 0.3% Ag and above, while it was formed within the bulk solder at 2% Ag and above.     

Thermal diffusion of lithium acceptors into ZnO crystals

Electron paramagnetic resonance (EPR) has been used to monitor the diffusion of lithium ions into single crystals of ZnO. The in-diffusion occurs when a crystal is embedded in LiF powder and then held in air at temperatures near 750°C for periods of time ranging up to 22 h. These added lithium ions occupy zinc sites and become singly ionized acceptors (because the material is initially n type). A corresponding reduction in the number of neutral shallow donors is observed with EPR. To monitor the lithium acceptors, we temporarily convert them to the EPR-active neutral acceptor state by exposure to laser light (325 nm or 442 nm) at low temperatures. Also, after each diffusion treatment, we monitor the EPR signal of singly ionized copper acceptors and the photo-induced EPR signal of neutral nitrogen acceptors. These nitrogen and copper impurities are initially present in the crystal, at trace levels, and are made observable by the thermal anneals. Infrared-absorption measurements at room temperature in the 2–10 μm region show that the concentration of free carriers decreases as lithium is added to the crystal. After 22 h at 750°C in the LiF powder, the free-carrier absorption is no longer present, and the crystal is semi-insulating.     

Low-energy electron-enhanced etching of HgCdTe

Low-energy electron-enhanced etching (LE4) is applied to HgCdTe to eliminate ion-induced surface damage. First, LE4 results for patterned samples are illustrated. The LE4 mechanism is understood from a mechanistic study in terms of three etch variables: direct current (DC) bias, gas composition, and sample temperature. For this paper, the effects of DC bias (electron energy) and gas composition (CH₄ concentration) are summarized qualitatively, followed by quantitative evidence. Etch rate, the amount of polymer, surface stoichiometry, and surface roughness have specific relations with each etch variable under competition between pure LE4 and polymer deposition.     

Layer-transfer process for silicon-on-insulator with improved manufacturability

We observe hydrogen platelet buildup in single-crystalline silicon caused by hydrogen-plasma processing. The platelets are aligned along a layer of lattice defects formed in silicon before the plasma processing. The buried-defect layer is formed by either silicon-into-silicon or argon-into-silicon implantation. We discuss the platelet nucleation, growth, and merge phenomena and discuss applicability of the plasma hydrogenation to silicon-on-insulator (SOI) wafer fabrication by layer transfer.